Patent US5766979A successfully refreshed from Google Patents.
US5766979A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer level contact sheet and method of assembly
Assignee: W.L. Gore and Associates Inc
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Filing: 1996-11-08
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Granted: 1998-06-16
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Expires: 2016-11-08
Abstract
Abstract The present invention relates to a system and method for performing reliability screening on semi-conductor wafers and particularly to a highly planar burn in apparatus and method for uses including wafer level burn-in (WLBI), diced die burn-in (DDBI), and packaged die burn-in (PDBI). The burn-in system includes a burn-in substrate with a planar base, a temporary Z-axis connecting member, and a Z-axis wafer level contact sheet electrically coupled to one another for screening wafers, diced die, and packaged electronic components, their assembly and use.
Inventors
- 👤 John J. Budnaitis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 16:06
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/63; H10W70/635; H10W70/67; H10W70/69; H10W70/695; Y; Y02; Y02P; Y02P20/00; Y02P20/50; Y02P20/582
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
89 words
A method of forming a wafer level contact sheet for use in a system for burning in at least one semiconductor wafer, said method comprising: a) providing a first laminate layer; b) forming a conductive via in said first laminate layer and a corresponding conductive pad; c) providing a z-axis, selectively conductive layer having uniformly configured bumps on a surface thereof; and d) adhering said first laminate layer to a surface of said z-axis layer to form a wafer level contact sheet adapted to electrically contact the semiconductor wafer.
Claim 2
Independent Claim
89 words
A method of forming a wafer level contact sheet for use in a system for burning in at least one semiconductor wafer, said method comprising: a) providing a first laminate layer; b) forming a conductive via in said first laminate layer and a corresponding conductive pad; c) providing a z-axis, selectively conductive layer having uniformly configured bumps on a surface thereof; and d) adhering said first laminate layer to a surface of said z-axis layer to form a wafer level contact sheet adapted to electrically contact the semiconductor wafer.
Claim 3
Dependent Claim
17 words
The method according to claim 1, wherein said laminate layer is formed from copper clad dielectric material.
Claim 4
Dependent Claim
68 words
The method according to claim 1, wherein said providing step c) includes the following steps: e) providing a second laminate layer; f) forming a conductive via in a surface of said second laminate layer g) forming a uniformly configured conductive bump from the conductive via in said second laminate layer; and h) adhering said z-axis material to said second laminate to form the z-axis material of step d).
Claim 5
Dependent Claim
19 words
The method according to claim 3, wherein said second laminate layer is formed from a copper clad dielectric material.
Claim 6
Dependent Claim
43 words
The method according to claim 3, wherein said selectively conductive, z-axis layer contains irregularly configured, electrically isolated in the x and y axes direction, z-axis conductive pathways that extend from one side of the z-axis layer to another side of said z-axis layer.
Claim 7
Dependent Claim
25 words
The method according to claim 2, wherein said dielectric or z-axis material or both are formed from a porous substrate containing a high temperature adhesive.
Claim 8
Dependent Claim
18 words
The method according to claim 6, wherein said dielectric has a T g of at least 200° C.
Claim 9
Dependent Claim
13 words
The method according to claim 6, wherein said porous substrate is a fluoropolymer.
Claim 10
Dependent Claim
13 words
The method according to claim 8, wherein said porous fluoropolymer is polytetrafluoroethylene (PTFE).
Claim 11
Dependent Claim
13 words
The method according to claim 8, wherein said fluoropolymer is porous expanded polytetrafluoroethylene.
Claim 12
Dependent Claim
15 words
The method according to claim 8, wherein said fluoropolymer is a porous copolymer of polytetrafluoroethylene.
Claim 13
Dependent Claim
11 words
The method according to claim 11, wherein said copolymer includes polyesters.
Claim 14
Dependent Claim
11 words
The method according to claim 11, wherein said copolymer includes polystyrenes.
Claim 15
Dependent Claim
17 words
The method according to claim 8, wherein said fluoropolymer is a porous copolymer of fluorinated ethylene-propylene (FEP).
Claim 16
Dependent Claim
25 words
The method according to claim 8, wherein said fluoropolymer is a porous copolymer of perfluoroalkoxy tetrafluoroethylene (PFA) with a C 1 -C 44 alkoxy group.
Claim 17
Dependent Claim
13 words
The method according to claim 6, wherein said adhesive is an epoxy resin.
Claim 18
Dependent Claim
13 words
The method according to claim 6, wherein said adhesive is an acrylic resin.
Claim 19
Dependent Claim
13 words
The method according to claim 6, wherein said adhesive is a urethane resin.
Claim 20
Dependent Claim
13 words
The method according to claim 6, wherein said adhesive is a silicone resin.
Claim 21
Dependent Claim
13 words
The method according to claim 6, wherein said adhesive is a polyimide resin.
Claim 22
Dependent Claim
14 words
The method according to claim 6, wherein said adhesive is a cyanate ester resin.
Claim 23
Dependent Claim
21 words
The method according to claim 5, wherein said z-axis layer is a porous member that is 5 to 500 microns thick.
Claim 24
Dependent Claim
17 words
The method according to claim 22, wherein said z-axis, porous member is 10 to 125 microns thick.
Claim 25
Dependent Claim
16 words
The method according to claim 22, wherein said z-axis, porous member is about 75 microns thick.
Claim 26
Dependent Claim
18 words
The method according to claim 22, wherein said planar, open cell porous member is about 150 microns thick.
Claim 27
Dependent Claim
22 words
The method according to claim 5, wherein said conductive pathways are formed from copper, copper and nickel, or copper, nickel and gold.
Claim 28
Dependent Claim
14 words
The method according to claim 5, wherein said conductive pathways are formed from nickel.
Claim 29
Dependent Claim
16 words
The method according to claim 5, wherein said conductive pathways are formed from silver or gold.
Claim 30
Dependent Claim
17 words
The method according to claim 5, wherein said conductive pathways are formed from platinum, palladium or rhodium.
Claim 31
Dependent Claim
14 words
The method according to claim 5, wherein said conductive pathways are formed from cobalt.
Claim 32
Dependent Claim
16 words
The method according to claim 5, wherein said conductive pathways are formed from aluminum or chromium.
Claim 33
Dependent Claim
37 words
The method according to claim 5, wherein said conductive pathways terminate in conductive dots on respective sides of said z-axis layer and a pitch of said conductive dots is about twice the dimension of said conductive dots.
Claim 34
Dependent Claim
23 words
The method according to claim 5, wherein said conductive pathways are formed from at least two metal layers, one of which is copper.
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