US4963225A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a contact device
Assignee: Tektronix Inc
•
Filing: 1989-10-20
•
Granted: 1990-10-16
•
Expires: 2009-10-20
Abstract
Abstract A contact element is formed on a sheet of dielectric material by depositing conductive material in an opening in a first layer of dielectric material, and depositing a second layer of dielectric material over the first layer and over the conductive material in the opening. Material of the first layer is removed from the surface farther from the second layer so that the conductive material projects beyond the first layer.
Inventors
- 👤 Gail R. Lehman-Lamer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 22:07
CPC Classifications
G; G01; G01R; G01R1/00; G01R1/02; G01R1/06; G01R1/067; G01R1/06711; G01R1/073; G01R1/07307; G01R1/07314; G01R3/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
86 words
A method of fabricating a contact element on a sheet of dielectric material, comprising: (a) providing a first layer of dielectric material having first and second opposite surfaces and at least one opening, (b) depositing conductive material in said opening, (c) depositing a second layer of dielectric material over the first surface of the first layer and over the conductive material in said opening, and (d) removing material of the first layer from its second surface so that the conductive material projects beyond the first layer.
Claim 2
Independent Claim
86 words
A method of fabricating a contact element on a sheet of dielectric material, comprising: (a) providing a first layer of dielectric material having first and second opposite surfaces and at least one opening, (b) depositing conductive material in said opening, (c) depositing a second layer of dielectric material over the first surface of the first layer and over the conductive material in said opening, and (d) removing material of the first layer from its second surface so that the conductive material projects beyond the first layer.
Claim 3
Dependent Claim
47 words
A method according to claim 1, wherein step (a) comprises providing a layer of dielectric material, masking a surface of the layer of dielectric material with a mask formed with an opening, and removing material of the layer of dielectric material through the opening in the mask.
Claim 4
Dependent Claim
17 words
A method according to claim 2, comprising removing material of the layer of dielectric material by etching.
Claim 5
Dependent Claim
18 words
A method according to claim 3, comprising etching under conditions such that the dielectric material is removed isotropically.
Claim 6
Dependent Claim
48 words
A method according to claim 1, comprising, between steps (b) and (c), depositing a layer of conductive material over the first surface of the first layer and patterning the layer of conductive material to define portions that are in adhesive relationship with the conductive material in the opening.
Claim 7
Dependent Claim
52 words
A method according to claim 1, wherein the layer provided in step (a) is bonded at its second surface to a metal substrate, and the method comprises, between steps (c) and (d), removing the metal of the substrate so as to expose the second surface of the first layer of dielectric material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-10-15 | 1994-04-16 | 1994-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-15 | 1998-04-16 | 1998-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-15 | 2002-04-16 | 2002-10-16 | $7700.00 | Window Closed / Lapsed |