Patent US5712813A successfully refreshed from Google Patents.
US5712813A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-level storage capacitor structure with improved memory density
Assignee: Individual
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Filing: 1996-10-17
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Granted: 1998-01-27
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Expires: 2016-10-17
Abstract
Abstract DRAM cells using a multi-level storage capacitor structure is disclosed. Since the storage capacitors of the present invention can extend to the adjacent cells, they can have a much larger surface area than those using a single-level stacked capacitor structure. As a result, constraints on the dielectric constant of the insulating materials can be greatly relaxed.
Inventors
- 👤 Guobiao Zhang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:59
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/37; H10B12/377
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
221 words
A semiconductor dynamic memory comprising a semiconductor substrate; first and second transistors, each having a source, a drain and a gate, said source and drain being formed in said substrate; a first insulating film covering said first and second transistors; a first storage capacitor, having a first bottom electrode, a first insulating dielectric, and a first top electrode, said first bottom electrode formed on said first insulating film and connected to a first contact plug which extends through a first contact hole made in said first insulating film and connects to a first source/drain junction of said first transistor, said first insulating dielectric covering at least a portion of the surface of said first electrode, said first top electrode formed on said first insulating dielectric; a second insulating film covering said first storage capacitor; a second storage capacitor, having a second bottom electrode, a second insulating dielectric, and a second top electrode, said second bottom electrode formed on said second insulating film and connected to a second contact plug which extends through a second contact hole made in said first and second insulating films and connects to a second source/drain junction of said second transistor, said second insulating dielectric covering at least a portion of the surface of said second electrode, said second top electrode formed on said second insulating dielectric.
Claim 2
Dependent Claim
221 words
A semiconductor dynamic memory comprising a semiconductor substrate; first and second transistors, each having a source, a drain and a gate, said source and drain being formed in said substrate; a first insulating film covering said first and second transistors; a first storage capacitor, having a first bottom electrode, a first insulating dielectric, and a first top electrode, said first bottom electrode formed on said first insulating film and connected to a first contact plug which extends through a first contact hole made in said first insulating film and connects to a first source/drain junction of said first transistor, said first insulating dielectric covering at least a portion of the surface of said first electrode, said first top electrode formed on said first insulating dielectric; a second insulating film covering said first storage capacitor; a second storage capacitor, having a second bottom electrode, a second insulating dielectric, and a second top electrode, said second bottom electrode formed on said second insulating film and connected to a second contact plug which extends through a second contact hole made in said first and second insulating films and connects to a second source/drain junction of said second transistor, said second insulating dielectric covering at least a portion of the surface of said second electrode, said second top electrode formed on said second insulating dielectric.
Claim 3
Dependent Claim
33 words
The semiconductor dynamic memory according to claim 1 wherein at least of a portion of said second bottom electrode is located above and overlaps at least a portion of said first bottom electrode.
Claim 4
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second storage capacitors is a planar capacitor.
Claim 5
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second storage capacitors is a fin-shaped capacitor.
Claim 6
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second storage capacitors is a cylindrical capacitor.
Claim 7
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second storage capacitors is a box-shaped capacitor.
Claim 8
Dependent Claim
25 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second insulating films has a substantially flat top surface.
Claim 9
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 1 wherein at least one of said first and second insulating dielectrics comprises protective ceramic materials.
Claim 10
Dependent Claim
17 words
The semiconductor dynamic memory according to claim 8 wherein said protective ceramic materials comprise protective metal oxides.
Claim 11
Dependent Claim
40 words
The semiconductor dynamic memory according to claim 1 wherein groups of transistors identical to said first and second transistors are formed in said semiconductor substrate, and a plurality of said first and second storage capacitors arranged in an alternating pattern.
Claim 12
Dependent Claim
134 words
A semiconductor dynamic memory comprising a semiconductor substrate; a transistor having a source, a drain and a gate, said source and drain being formed in said substrate; a first storage capacitor formed in a trench in said semiconductor substrate, one of the two electrodes of said first storage capacitor connected to a source/drain junction of said transistor; an insulating film covering said transistors; a second storage capacitor, having a bottom electrode, an insulating dielectric, and a top electrode, said bottom electrode formed on said insulating film and connected to a contact plug which extends through a contact hole made in said insulating film and connects to said source/drain junction of said transistor, said insulating dielectric covering at least a portion of the surface of said electrode, said top electrode formed on said insulating dielectric.
Claim 13
Dependent Claim
134 words
A semiconductor dynamic memory comprising a semiconductor substrate; a transistor having a source, a drain and a gate, said source and drain being formed in said substrate; a first storage capacitor formed in a trench in said semiconductor substrate, one of the two electrodes of said first storage capacitor connected to a source/drain junction of said transistor; an insulating film covering said transistors; a second storage capacitor, having a bottom electrode, an insulating dielectric, and a top electrode, said bottom electrode formed on said insulating film and connected to a contact plug which extends through a contact hole made in said insulating film and connects to said source/drain junction of said transistor, said insulating dielectric covering at least a portion of the surface of said electrode, said top electrode formed on said insulating dielectric.
Claim 14
Dependent Claim
41 words
The semiconductor dynamic memory according to claim 11 wherein groups of transistors identical to said transistor are formed in said semiconductor substrate, and a plurality of storage capacitors identical to said first and second storage capacitors arranged in a similar pattern.
Claim 15
Dependent Claim
186 words
A semiconductor dynamic memory comprising: a semiconductor substrate; at least two groups of memory cells, first and second groups, each group comprising a plurality of substantially identical memory cells; each memory cell in said first group comprising a first transistor, a first storage capacitor and a first contact between a first source/drain junction of said first transistor and a first electrode of said first storage capacitor, wherein the highest points of the first storage capacitors of said first group are substantially at a first level with respect to said semiconductor substrate; each memory cell in said second group comprising a second transistor, a second storage capacitor and a second contact between a second source/drain junction of said second transistor and a second electrode of said second storage capacitor, wherein the highest points of the second storage capacitors of said second group are substantially at a second level with respect to said semiconductor substrate; said second level being higher than said first level with respect to said semiconductor substrate, the distance between said first and second levels being larger than the thickness of said second storage capacitor.
Claim 16
Dependent Claim
186 words
A semiconductor dynamic memory comprising: a semiconductor substrate; at least two groups of memory cells, first and second groups, each group comprising a plurality of substantially identical memory cells; each memory cell in said first group comprising a first transistor, a first storage capacitor and a first contact between a first source/drain junction of said first transistor and a first electrode of said first storage capacitor, wherein the highest points of the first storage capacitors of said first group are substantially at a first level with respect to said semiconductor substrate; each memory cell in said second group comprising a second transistor, a second storage capacitor and a second contact between a second source/drain junction of said second transistor and a second electrode of said second storage capacitor, wherein the highest points of the second storage capacitors of said second group are substantially at a second level with respect to said semiconductor substrate; said second level being higher than said first level with respect to said semiconductor substrate, the distance between said first and second levels being larger than the thickness of said second storage capacitor.
Claim 17
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 13 wherein at least one of said first and second storage capacitors is a planar capacitor.
Claim 18
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 13 wherein at least one of said first and second storage capacitors is a fin-shaped capacitor.
Claim 19
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 13 wherein at least one of said first and second storage capacitors is a cylindrical capacitor.
Claim 20
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 13 wherein at least one of said first and second storage capacitors is a box-shaped capacitor.
Claim 21
Dependent Claim
17 words
The semiconductor dynamic memory according to claim 13 wherein said first storage capacitor is a trench capacitor.
Claim 22
Dependent Claim
23 words
The semiconductor dynamic memory according to claim 13 wherein at least one of said first and second insulating dielectrics comprises protective ceramic materials.
Claim 23
Dependent Claim
17 words
The semiconductor dynamic memory according to claim 19 wherein said protective ceramic materials comprise protective metal oxides.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2001-01-26 | 2001-07-28 | 2002-01-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-26 | 2005-07-28 | 2006-01-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-26 | 2009-07-28 | 2010-01-27 | $7700.00 | Window Closed / Lapsed |