US5095346A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Stacked-capacitor for a dram cell
Assignee: Samsung Electronics Co Ltd
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Filing: 1990-08-31
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Granted: 1992-03-10
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Expires: 2010-08-31
Abstract
Abstract There is disclosed a stacked capacitor with high capacity which ensures structural stability in a DRAM cell and a method for manufacturing the same. The stacked-capacitor is of a hollow (or cylindrical) capacitor where both ends of several polysilicon layers which form a storage electrode are connected with each other. In construction, this inventive stacked-capacitor includes: a first polysilicon layer coupled to the source region so as to extend in parallel with surface of the substrate over the left and right sides of the source region; a bridge polysilicon layer, extending in the upward direction of the substrate from both ends of the first polysilicon layer; a dielectric film formed so as to contact with the surfaces of the bridge polysilicon layer, first polysilicon layer, second polysilicon layer; and a third polysilicon layer formed so as to contact with the surface of the dielectric film.
Inventors
- 👤 Dong-Joo Bae
- 👤 Won-Shik Baek
- 👤 Kyu-Hyun Choi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 02:15
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/31; H10B12/318; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10B12/036; H10P; H10P14/00; H10P14/40; H10P14/416
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
163 words
A DRAM cell having an element separating oxide film, a source region having left and right sides and a drain region which are formed on a semiconductor substrate, and a stacked capacitor comprising: a first polysilicon layer coupled to the source region and having left and right ends so as to respectively extend in parallel with a surface of the substrate over the left and right sides of said source region; a bridge polysilicon layer, extending in an upward direction of the substrate from both ends of said first polysilicon layer; a second polysilicon layer which makes contact with an upper end of the bridge polysilicon layer and extends in parallel with said first polysilicon layer; a dielectric film formed so as to contact with an inner surface and an outer surface of said bridge polysilicon layer, said first polysilicon layer, and said second polysilicon layer; and a third polysilicon layer formed so as to contact with a surface of said dielectric film.
Claim 2
Dependent Claim
163 words
A DRAM cell having an element separating oxide film, a source region having left and right sides and a drain region which are formed on a semiconductor substrate, and a stacked capacitor comprising: a first polysilicon layer coupled to the source region and having left and right ends so as to respectively extend in parallel with a surface of the substrate over the left and right sides of said source region; a bridge polysilicon layer, extending in an upward direction of the substrate from both ends of said first polysilicon layer; a second polysilicon layer which makes contact with an upper end of the bridge polysilicon layer and extends in parallel with said first polysilicon layer; a dielectric film formed so as to contact with an inner surface and an outer surface of said bridge polysilicon layer, said first polysilicon layer, and said second polysilicon layer; and a third polysilicon layer formed so as to contact with a surface of said dielectric film.
Claim 3
Dependent Claim
25 words
The DRAM cell according to claim 1, wherein said bridge polysilicon layer, first polysilicon layer and second polysilicon layer are formed into one storage electrode.
Claim 4
Dependent Claim
17 words
The DRAM cell according to claim 1, wherein said third polysilicon layer serves as a plate electrode.
Claim 5
Dependent Claim
28 words
The DRAM cell according to claim 1, wherein said bridge polysilicon layer is a part to which said first polysilicon layer and said second polysilicon layer are connected.
Claim 6
Dependent Claim
90 words
A stacked capacitor in a DRAM cell having a storage electrode and a plate electrode, said storage electrode comprising: a first polysilicon layer, coupled to a source region in a semiconductor substrate, having two ends extending over said source region; a bridge polysilicon layer extending upwards from said two ends of said first polysilicon layer; a second polysilicon layer connected to an upper end of said bridge polysilicon layer and extending in parallel with said first polysilicon layer; and a dielectric film separating said storage electrode from said plate electrode.
Claim 7
Dependent Claim
90 words
A stacked capacitor in a DRAM cell having a storage electrode and a plate electrode, said storage electrode comprising: a first polysilicon layer, coupled to a source region in a semiconductor substrate, having two ends extending over said source region; a bridge polysilicon layer extending upwards from said two ends of said first polysilicon layer; a second polysilicon layer connected to an upper end of said bridge polysilicon layer and extending in parallel with said first polysilicon layer; and a dielectric film separating said storage electrode from said plate electrode.
Claim 8
Dependent Claim
23 words
The stacked capacitor in a DRAM cell as claimed in claim 5, wherein said plate electrode is comprised of a third polysilicon layer.
Claim 9
Dependent Claim
24 words
The stacked capacitor in a DRAM cell as claimed in claim 5, wherein said dielectric film contacts an inner surface of said storage cell.
Claim 10
Dependent Claim
24 words
The stacked capacitor in a DRAM cell as claimed in claim 5, wherein said dielectric film contacts an outer surface of said storage cell.
Claim 11
Dependent Claim
24 words
The stacked capacitor in a DRAM cell as claimed in claim 8, wherein said dielectric film contacts an inner surface of said storage cell.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |