US5707692A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and method for processing a base substance using plasma and a magnetic field
Assignee: Canon Inc
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Filing: 1994-10-11
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Granted: 1998-01-13
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Expires: 2014-10-11
Abstract
Abstract A plasma processing apparatus for processing a base substance installed within a processing chamber into which predetermined gases are flowed and which is maintained at a predetermined pressure by producing a plasma within said processing chamber is characterized by comprising plasma producing means for producing the plasma within said processing chamber including at least two ground electrodes provided on external peripheries of said processing chamber, and an rf electrode provided on external periphery of said processing chamber between said two ground electrodes, and magnetic field producing means for producing a magnetic field orthogonal to an electric field formed by said plasma producing means.
Inventors
- 👤 Nobumasa Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:30
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32091; C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/507; C23C16/517; H01J37/32431; H01J37/3266
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
207 words
A plasma processing apparatus for processing a base substance installed within a processing chamber into which a gas for use in a plasma process is introduced and maintained at a pressure of 0.001 to 1 Torr, comprising: plasma producing means for producing a plasma within said processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes; magnetic field producing means comprising a first and a second magnet for producing a mirror magnetic field orthogonal to an rf electric field between said ground electrodes which is formed by said plasma producing means, wherein said first and second magnets are arranged on the external periphery surrounding said chamber so as to sandwich said two ground and one rf electrodes, thereby confining plasma produced by said plasma producing means substantially within a plasma generating space within the vicinity of said electrodes as determined by said rf electric field and said magnetic field; and supporting means for supporting said base substance, wherein said supporting means supports said base substance at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 2
Dependent Claim
207 words
A plasma processing apparatus for processing a base substance installed within a processing chamber into which a gas for use in a plasma process is introduced and maintained at a pressure of 0.001 to 1 Torr, comprising: plasma producing means for producing a plasma within said processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes; magnetic field producing means comprising a first and a second magnet for producing a mirror magnetic field orthogonal to an rf electric field between said ground electrodes which is formed by said plasma producing means, wherein said first and second magnets are arranged on the external periphery surrounding said chamber so as to sandwich said two ground and one rf electrodes, thereby confining plasma produced by said plasma producing means substantially within a plasma generating space within the vicinity of said electrodes as determined by said rf electric field and said magnetic field; and supporting means for supporting said base substance, wherein said supporting means supports said base substance at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 3
Dependent Claim
40 words
The plasma producing apparatus according to claim 1, further comprising light source means for emitting light having a wavelength absorbable into said base substance or gas molecules sticking to said base substance or reaction intermediates onto said covered base substance.
Claim 4
Dependent Claim
11 words
An apparatus according to claim 1, wherein said magnets comprise electromagnets.
Claim 5
Dependent Claim
12 words
An apparatus according to claim 1, wherein said magnets comprise permanent magnets.
Claim 6
Dependent Claim
104 words
A plasma processing apparatus for processing a base substance installed within a processing chamber into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: plasma producing means for producing a plasma within said processing chamber two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes; and magnetic field producing means provided along an external periphery of said rf electrode for producing a magnetron magnetic field orthogonal to an electric field formed by said plasma producing means.
Claim 7
Dependent Claim
104 words
A plasma processing apparatus for processing a base substance installed within a processing chamber into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: plasma producing means for producing a plasma within said processing chamber two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes; and magnetic field producing means provided along an external periphery of said rf electrode for producing a magnetron magnetic field orthogonal to an electric field formed by said plasma producing means.
Claim 8
Dependent Claim
41 words
The plasma producing apparatus according to claim 5, further comprising light source means for emitting a light having a wavelength absorbable into said base substance or gas molecules sticking to said base substance or reaction intermediates onto said covered base substance.
Claim 9
Dependent Claim
11 words
An apparatus according to claim 5, wherein said magnets comprise electromagnets.
Claim 10
Dependent Claim
12 words
An apparatus according to claim 5, wherein said magnets comprise permanent magnets.
Claim 11
Dependent Claim
196 words
A plasma processing method for processing a base substance installed within a processing chamber of an apparatus into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: introducing said gas into said processing chamber, having (I) plasma producing means for producing a plasma within the processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes, and (ii) magnetic field producing means comprising a first and a second magnet arranged on an external periphery surrounding said chamber so as to sandwich said two ground and one rf electrodes, for producing a mirror magnetic field orthogonal to an rf electric field which is formed by said plasma producing means; producing the plasma from said gas substantially within a plasma generating space inside said processing chamber with said plasma producing means; processing said base substance using said plasma; and wherein said base substance is disposed at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 12
Dependent Claim
196 words
A plasma processing method for processing a base substance installed within a processing chamber of an apparatus into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: introducing said gas into said processing chamber, having (I) plasma producing means for producing a plasma within the processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes, and (ii) magnetic field producing means comprising a first and a second magnet arranged on an external periphery surrounding said chamber so as to sandwich said two ground and one rf electrodes, for producing a mirror magnetic field orthogonal to an rf electric field which is formed by said plasma producing means; producing the plasma from said gas substantially within a plasma generating space inside said processing chamber with said plasma producing means; processing said base substance using said plasma; and wherein said base substance is disposed at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 13
Dependent Claim
18 words
The plasma processing method according to claim 9, further comprising forming a thin film on said base substance.
Claim 14
Dependent Claim
17 words
The plasma processing method according to claim 9, further comprising reforming a surface of said base substance.
Claim 15
Dependent Claim
27 words
The plasma processing method according to claim 9, further comprising removing a surface of said base substance or extraneous matters on the surface of said base substance.
Claim 16
Dependent Claim
11 words
A method according to claim 9, wherein said magnets comprise electromagnets.
Claim 17
Dependent Claim
12 words
A method according to claim 7, wherein said magnets comprise permanent magnets.
Claim 18
Dependent Claim
45 words
A method according to claim 9, wherein said base substance is at least arranged adjacent to said plasma processing means within said processing chamber, and is subjected to processing in a low plasma density region less than or equal to 5×10 8 /cm 3 .
Claim 19
Dependent Claim
175 words
A plasma processing method for processing a base substance installed within a processing chamber of an apparatus into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: introducing said gas into said processing chamber, having (I) plasma producing means for producing plasma within the processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes, and (ii) magnetic field producing means, arranged along an external periphery of said rf electrode, for producing a magnetron magnetic field orthogonal to an electric field formed by said plasma producing means; producing the plasma from said gas substantially within a plasma generating space inside said processing chamber with said plasma producing means; and processing said base substance using said plasma, wherein said base substance is disposed at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 20
Dependent Claim
175 words
A plasma processing method for processing a base substance installed within a processing chamber of an apparatus into which a gas for use in plasma processing is introduced and maintained at a pressure between 0.001 and 1 Torr, comprising: introducing said gas into said processing chamber, having (I) plasma producing means for producing plasma within the processing chamber including two ground electrodes and one rf electrode provided on an external periphery surrounding said processing chamber, said rf electrode being disposed between said two ground electrodes, and (ii) magnetic field producing means, arranged along an external periphery of said rf electrode, for producing a magnetron magnetic field orthogonal to an electric field formed by said plasma producing means; producing the plasma from said gas substantially within a plasma generating space inside said processing chamber with said plasma producing means; and processing said base substance using said plasma, wherein said base substance is disposed at a sufficient distance from said plasma generating space to be in a region of lower plasma density than said plasma generating space.
Claim 21
Dependent Claim
18 words
The plasma processing method according to claim 16, further comprising forming a thin film on said base substance.
Claim 22
Dependent Claim
17 words
The plasma processing method according to claim 16, further comprising removing a surface of said base substance.
Claim 23
Dependent Claim
27 words
The plasma processing method according to claim 16, further comprising removing a surface of said based substance or extraneous matters on the surface of said base substance.
Claim 24
Dependent Claim
11 words
A method according to claim 16, wherein said magnets comprise electromagnets.
Claim 25
Dependent Claim
12 words
A method according to claim 16, wherein said magnets comprise permanent magnets.
Claim 26
Dependent Claim
45 words
A method according to claim 16, wherein said base substance is at least arranged adjacent to said plasma processing means within said processing chamber, and is subjected to processing in a low plasma density region less than or equal to 5×10 8 /cm 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-01-12 | 2001-07-14 | 2002-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-01-12 | 2005-07-14 | 2006-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-01-12 | 2009-07-14 | 2010-01-13 | $7700.00 | Window Closed / Lapsed |