USH566H
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus and process for deposition of hard carbon films
Assignee: TRUSTEES OF LELEAND STANFORD JUNIOR UNIVERSITY
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Filing: 1985-12-04
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Granted: 1989-01-03
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Expires: 2005-12-04
Abstract
Abstract A process and an apparatus for depositing thin, amorphous carbon films having extreme hardness on a substrate is described. An enclosed chamber maintained at less than atmospheric pressure houses the substrate and plasma producing elements. A first electrode is comprised of a cavity enclosed within an RF coil which excites the plasma. A substrate located on a second electrode is excited by radio frequency power applied to the substrate. A magnetic field confines the plasma produced by the first electrode to the area away from the walls of the chamber and focuses the plasma onto the substrate thereby yielding film deposits having higher purity and having more rapid buildup than other methods of the prior art.
Inventors
- 👤 Ali R. Nyaiesh
- 👤 Edward L. Garwin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:55
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/505; C23C16/509; B; B01; B01J; B01J19/00; B01J19/08; B01J19/087; B01J19/088; C23C16/22; C23C16/26
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
127 words
An apparatus for depositing hard carbon films on a substrate comprising: a chamber for producing a pressure less than atmospheric; a cavity contained within the chamber, said cavity having an opening communicating with the chamber; an RF coil, surrounding the cavity; a first RF source for exciting the RF coil; a substrate support located within the chamber, said support located opposite the opening in the cavity and oriented such that the surface of the substrate is generally parallel to the opening in the cavity; means for electrically biasing the substrate support; means for introducing gases into the cavity; means for producing a magnetic field having a direction of maximum field intensity which is generally perpendicular to the surface of the substrate; and means for evacuating the chamber.
Claim 2
Independent Claim
127 words
An apparatus for depositing hard carbon films on a substrate comprising: a chamber for producing a pressure less than atmospheric; a cavity contained within the chamber, said cavity having an opening communicating with the chamber; an RF coil, surrounding the cavity; a first RF source for exciting the RF coil; a substrate support located within the chamber, said support located opposite the opening in the cavity and oriented such that the surface of the substrate is generally parallel to the opening in the cavity; means for electrically biasing the substrate support; means for introducing gases into the cavity; means for producing a magnetic field having a direction of maximum field intensity which is generally perpendicular to the surface of the substrate; and means for evacuating the chamber.
Claim 3
Dependent Claim
19 words
The apparatus of claim 1 wherein the means for biasing the substrate carrier comprises a source of RF power.
Claim 4
Dependent Claim
38 words
The apparatus of claim 2 wherein the means for biasing the substrate carrier comprises a source of RF power and means for inhibiting direct current flow between the surface of the substrate and the source of RF power.
Claim 5
Dependent Claim
29 words
The apparatus of claim 3 wherein the means for biasing the substrate carrier comprises a source of RF power isolated from the substrate carrier by means of a capacitor.
Claim 6
Dependent Claim
38 words
The apparatus of claim 1 wherein the means for producing a magnetic field having an axis generally parallel to the axis between the cavity and the substrate is an electromagnet having coils surrounding the exterior of the chamber.
Claim 7
Dependent Claim
21 words
The apparatus of claim 1 wherein the cavity is a high temperature glass cylinder supported in the interior of the chamber.
Claim 8
Dependent Claim
162 words
The process for depositing thin films on a substrate, in a chamber having a cavity located in the interior of the chamber for communicating with the chamber through an opening, for creating a plasma within a gas introduced into the cavity, comprising the steps of: placing the substrate in the chamber supported on a substrate carrier, such that the surface of the substrate is located opposite the opening in the cavity and oriented such that the surface of the substrate is generally parallel to the opening in the cavity; evacuating the chamber to a pressure less than atmospheric; introducing into the cavity a gas containing the substance desired to be deposited on the substrate; exciting the gas within the cavity to produce a plasma; biasing the substrate carrier to accelerate ions from the plasma to the substrate; confining the plasma by applying a magnetic field having a direction of maximum field intensity which is generally perpendicular to the surface of the substrate.
Claim 9
Dependent Claim
162 words
The process for depositing thin films on a substrate, in a chamber having a cavity located in the interior of the chamber for communicating with the chamber through an opening, for creating a plasma within a gas introduced into the cavity, comprising the steps of: placing the substrate in the chamber supported on a substrate carrier, such that the surface of the substrate is located opposite the opening in the cavity and oriented such that the surface of the substrate is generally parallel to the opening in the cavity; evacuating the chamber to a pressure less than atmospheric; introducing into the cavity a gas containing the substance desired to be deposited on the substrate; exciting the gas within the cavity to produce a plasma; biasing the substrate carrier to accelerate ions from the plasma to the substrate; confining the plasma by applying a magnetic field having a direction of maximum field intensity which is generally perpendicular to the surface of the substrate.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-03 | 1992-07-04 | 1993-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-03 | 1996-07-04 | 1997-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-03 | 2000-07-04 | 2001-01-03 | $7700.00 | Window Closed / Lapsed |