Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus

Claim 2

An ion generation apparatus, comprising: a vacuum chamber including a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a cylindrical plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of a microwave to be introduced, and an end portion of said plasma generation chamber all connected with each other in the order named, and further having a gas introduction inlet; a tubular target disposed along an inner wall of said plasma generation chamber and supplied with a negative voltage; and at least one pair of magnetic field producing means which are disposed around said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the strength of the magnetic field in said plasma generation chamber has a minimum in the neighborhood of the center of said plasma generation chamber.

Claim 3

An ion generation apparatus as claimed in claim 1, further comprising at least one pair of second magnetic field producing means disposed so as to surround said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.

Claim 4

An ion generation apparatus as claimed in claim 2, wherein said second magnetic field producing means is a ring-shaped permanent magnet.

Claim 5

An ion generation apparatus as claimed in claim 2, wherein said second magnetic field producing means is a magnetic yoke.

Claim 6

An ion generation apparatus as claimed in claim 1, wherein a magnetic flux absorbing yoke is disposed around said vacuum waveguide in such a way that said yoke surrounds one of said at least one pair of magnetic field producing means and is disposed along said vacuum waveguide.

Claim 7

An ion generation apparatus as claimed in claim 5, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within said vacuum chamber from any point on said target.

Claim 8

An ion generation apparatus as claimed in claim 5, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawn from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 9

An ion generation apparatus as claimed in claim 1, wherein said vacuum waveguide is connected to said plasma generation chamber in a direction perpendicular to the direction of the magnetic flux.

Claim 10

An ion generation apparatus as claimed in claim 8, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within said vacuum chamber from any point on said target.

Claim 11

An ion generation apparatus as claimed in claim 8, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawn from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 12

A thin film forming apparatus, comprising: a vacuum chamber including a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a cylindrical plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of a microwave to be introduced, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein, all of which are connected with each other in the order named, and further having a gas introduction inlet; a tubular target disposed along an inner wall of said plasma generation chamber and supplied with a negative voltage; and at least one pair of magnetic field producing means disposed so as to surround said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the strength of the magnetic field in said plasma generation chamber has a minimum in the neighborhood of the center of said plasma generation chamber.

Claim 13

A thin film forming apparatus, comprising: a vacuum chamber including a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a cylindrical plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of a microwave to be introduced, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein, all of which are connected with each other in the order named, and further having a gas introduction inlet; a tubular target disposed along an inner wall of said plasma generation chamber and supplied with a negative voltage; and at least one pair of magnetic field producing means disposed so as to surround said vacuum waveguide and said end portion of said plasma generation chamber so that a mirror field is produced in such a way that the strength of the magnetic field in said plasma generation chamber has a minimum in the neighborhood of the center of said plasma generation chamber.

Claim 14

A thin film forming apparatus as claimed in claim 11, further comprising at least one pair of second magnetic field producing means disposed around said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.

Claim 15

A thin film forming apparatus as claimed in claim 12, wherein said second magnetic field producing means is a ring-shaped permanent magnet.

Claim 16

A thin film forming apparatus as claimed in claim 12, wherein said second magnetic field producing means is a magnetic yoke.

Claim 17

A thin film forming apparatus as claimed in claim 11, wherein a magnetic flux absorbing yoke is disposed around said vacuum waveguide in such a way that said yoke surrounds one of said magnetic field producing means and is disposed along said vacuum waveguide.

Claim 18

A thin film forming apparatus as claimed in claim 15, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within said vacuum chamber from any point on said target.

Claim 19

A thin film forming apparatus as claimed in claim 15, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawn from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 20

A thin film forming apparatus as claimed in claim 11, wherein said vacuum waveguide is connected to said plasma generation chamber in a direction perpendicular to the direction of the magnetic flux produced by said magnetic field producing means.

Claim 21

A thin film forming apparatus as claimed in claim 18, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within said vacuum chamber from any point on said target.

Claim 22

A thin film forming apparatus as claimed in claim 18, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawing from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 23

A thin film forming apparatus as claimed in claim 11, wherein said substrate holder holds a substrate in such a manner that a surface of said substrate is maintained perpendicular to an axis of said tubular target.

Claim 24

An ion source, comprising: a vacuum chamber including a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a cylindrical plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of a microwave to be introduced, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein, all of which are connected to each other in the order named, and further having a gas introduction inlet; a tubular target disposed along an inner wall of said plasma generation chamber and supplied with a negative voltage; at least one pair of magnetic field producing means disposed so as to surround said vacuum waveguide and said end portion of said plasma chamber so that a mirror field is produced in such a way that the strength of the magnetic field in said plasma chamber has a minimum in the neighborhood of the center of said plasma generation chamber; and an ion extraction mechanism which is disposed at said end portion of said plasma generation chamber to selectively extract ions which are obtained by sputtering of said target and are ionized within plasma.

Claim 25

An ion source, comprising: a vacuum chamber including a vacuum waveguide having a microwave introduction window at one end thereof, said microwave introduction window being connected to a microwave waveguide, a cylindrical plasma generation chamber having a diameter and a length sufficient to define a microwave cavity resonator for causing the resonance of a microwave to be introduced, an end portion of said plasma generation chamber and a specimen chamber having a substrate holder disposed therein, all of which are connected to each other in the order named, and further having a gas introduction inlet; a tubular target disposed along an inner wall of said plasma generation chamber and supplied with a negative voltage; at least one pair of magnetic field producing means disposed so as to surround said vacuum waveguide and said end portion of said plasma chamber so that a mirror field is produced in such a way that the strength of the magnetic field in said plasma chamber has a minimum in the neighborhood of the center of said plasma generation chamber; and an ion extraction mechanism which is disposed at said end portion of said plasma generation chamber to selectively extract ions which are obtained by sputtering of said target and are ionized within plasma.

Claim 26

An ion source as claimed in claim 22, further comprising at least one pair of second magnetic field producing means disposed so as to surround said plasma generation chamber in opposite magnetic polarity relationship so that the magnetic flux leaks to the inner surface of said target.

Claim 27

An ion source as claimed in claim 23, wherein said second magnetic field producing means is a magnetic yoke.

Claim 28

An ion source as claimed in claim 23, wherein said second magnetic field producing means is a ring-shaped permanent magnet.

Claim 29

An ion source as claimed in claim 22, wherein a magnetic flux absorbing yoke is disposed around said vacuum waveguide in such a way that said yoke surrounds said magnetic field producing means and is disposed along said vacuum waveguide.

Claim 30

An ion source as claimed in claim 26, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within said vacuum chamber from any point on said target.

Claim 31

An ion source as claimed in claim 26, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawn from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 32

An ion source as claimed in claim 22, wherein said vacuum waveguide is connected to said plasma generation chamber in a direction perpendicular to the direction of the magnetic field produced by said magnetic field producing means.

Claim 33

An ion source as claimed in claim 29, wherein said microwave introduction window is disposed at a position which cannot be reached by any straight line extending within aid vacuum chamber from any point on said target.

Claim 34

An ion source as claimed in claim 29, wherein said microwave introduction window is provided at a predetermined distance from said plasma generation chamber, said predetermined distance being longer than the distance from said plasma generation chamber to a cross point of said vacuum waveguide and a line drawn from any point on a surface of said target to a portion of a wall of said plasma generation chamber at which said vacuum waveguide is connected thereto.

Claim 35

An ion generation apparatus, comprising: a vacuum chamber which includes a plasma generation chamber having a first end and a second end and having an axis which runs through the ends, the second end of the plasma generation chamber having an aperture through which the axis extends, and means for introducing microwave energy at a predetermined frequency into the plasma generation chamber, the plasma generation chamber being dimensioned to provide a microwave cavity resonator for microwaves having the predetermined frequency; a tubular target having a first and a second end and having a passage between the first and second ends, the target being mounted in the plasma generation chamber so that the first end of the target is disposed adjacent the first end of the plasma generation chamber, the second end of the target is disposed adjacent the second end of the plasma generation chamber, and the axis of the plasma generation chamber extends through the passage, the target being supplied with a negative voltage; a first annular magnet mounted at the first end of the plasma generation chamber so as to be coaxial with respect to the axis of the plasma generation chamber; and a second annular magnet mounted at the second end of the plasma generation chamber so as to be coaxial with respect to the axis of the plasma generation chamber, wherein the first and second magnets produce a magnetic field within the passage of the tubular target, the strength of the magnetic field within the passage of the tubular target having a minimum value at a position between the ends of the tubular target.

Claim 36

An ion generation apparatus, comprising: a vacuum chamber which includes a plasma generation chamber having a first end and a second end and having an axis which runs through the ends, the second end of the plasma generation chamber having an aperture through which the axis extends, and means for introducing microwave energy at a predetermined frequency into the plasma generation chamber, the plasma generation chamber being dimensioned to provide a microwave cavity resonator for microwaves having the predetermined frequency; a tubular target having a first and a second end and having a passage between the first and second ends, the target being mounted in the plasma generation chamber so that the first end of the target is disposed adjacent the first end of the plasma generation chamber, the second end of the target is disposed adjacent the second end of the plasma generation chamber, and the axis of the plasma generation chamber extends through the passage, the target being supplied with a negative voltage; a first annular magnet mounted at the first end of the plasma generation chamber so as to be coaxial with respect to the axis of the plasma generation chamber; and a second annular magnet mounted at the second end of the plasma generation chamber so as to be coaxial with respect to the axis of the plasma generation chamber, wherein the first and second magnets produce a magnetic field within the passage of the tubular target, the strength of the magnetic field within the passage of the tubular target having a minimum value at a position between the ends of the tubular target.