US4433006A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for oxidizing semiconducting compounds, especially gallium arsenide
Assignee: Leonardo SpA
•
Filing: 1982-05-28
•
Granted: 1984-02-21
•
Expires: 2002-05-28
Abstract
Abstract In order to provide a semiconductive substrate such as gallium arsenide with an oxide layer, the substrate is positively biased in a plasma reactor in which an oxidizing gas is ionized by radiofrequency excitation while the substrate is heated to an elevated temperature increasing its conductivity. The substrate may be placed for this purpose on a graphite pedestal which is inductively heated from the same radiofrequency source.
Inventors
- 👤 Antonio Cetronio
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 11:53
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; C; C04; C04B; C04B41/00; C04B41/0054; C04B41/009; C04B41/80; C23; C23C; C23C8/00; C23C8/06; C23C8/36; H10P14/6319
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
52 words
A process for providing a substrate of a semiconductive compound with an oxide layer, comprising the steps of placing said substrate in an atmosphere of highly ionized oxidizing gas, applying an anodic bias to said substrate, and heating said substrate to an elevated temperature significantly reducing the electrical resistivity of said compound.
Claim 2
Dependent Claim
52 words
A process for providing a substrate of a semiconductive compound with an oxide layer, comprising the steps of placing said substrate in an atmosphere of highly ionized oxidizing gas, applying an anodic bias to said substrate, and heating said substrate to an elevated temperature significantly reducing the electrical resistivity of said compound.
Claim 3
Dependent Claim
13 words
A process as defined in claim 1 wherein said compound is gallium arsenide.
Claim 4
Dependent Claim
18 words
A process as defined in claim 2 wherein said elevated temperature ranges between substantially 400° and 500° C.
Claim 5
Dependent Claim
29 words
A process as defined in claim 1, 2 or 3 wherein the gas is ionized by high-frequency discharges, said substrate being inductively heated by high-frequency current inducing said discharges.
Claim 6
Dependent Claim
21 words
A process as defined in claim 4 wherein the inductively generated heat is transmitted to the substrate through a graphite support.
References Cited (Backward Citations)
US4374867A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-02-20 | 1987-08-22 | 1988-02-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-02-20 | 1991-08-22 | 1992-02-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-02-20 | 1995-08-22 | 1996-02-21 | $7700.00 | Window Closed / Lapsed |