US4374867A
Expired / Lapsed
US
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Method of growing oxide layer on indium gallium arsenide
Assignee: AT&T Inc
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Filing: 1981-11-06
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Granted: 1983-02-22
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Expires: 2001-11-06
Abstract
Abstract A method of growing a water insoluble native plasma oxide on an In 0 .53 Ga 0 .47 As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.
Inventors
- 👤 Robert E. Nahory
- 👤 Benjamin Tell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 02:01
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6312; C; C23; C23C; C23C8/00; C23C8/06; C23C8/36; H10P14/6319; H10P14/68; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
42 words
In a process for growing an oxide on an epitaxial layer consisting primarily of indium, gallium and arsenic by exposing the layer to a plasma of oxygen, the step of exposing the layer to water vapor during the growth of the oxide.
Claim 2
Dependent Claim
42 words
In a process for growing an oxide on an epitaxial layer consisting primarily of indium, gallium and arsenic by exposing the layer to a plasma of oxygen, the step of exposing the layer to water vapor during the growth of the oxide.
Claim 3
Dependent Claim
36 words
In a process for growing an oxide on an epitaxial layer as defined in claim 1 wherein the process further includes the step of applying a positive potential to said epitaxial layer during the growth process.
Claim 4
Dependent Claim
40 words
In a process for growing an oxide on an epitaxial layer as defined in claim 2 wherein the process further includes the step of applying a negative potential to said epitaxial layer prior to the application of said positive potential.
Claim 5
Dependent Claim
76 words
A process for growing an oxide on an epitaxial layer of a semiconductor structure consisting primarily of indium, gallium and arsenic comprising the steps of evacuating a growth chamber to a predetermined vacuum level, flowing oxygen and water vapor into said growth chamber to achieve a predetermined level of pressure, creating a plasma discharge within said growth chamber, and applying a positive potential to an electrode surface that supports the semiconductor structure having said epitaxial layer.
Claim 6
Dependent Claim
76 words
A process for growing an oxide on an epitaxial layer of a semiconductor structure consisting primarily of indium, gallium and arsenic comprising the steps of evacuating a growth chamber to a predetermined vacuum level, flowing oxygen and water vapor into said growth chamber to achieve a predetermined level of pressure, creating a plasma discharge within said growth chamber, and applying a positive potential to an electrode surface that supports the semiconductor structure having said epitaxial layer.
Claim 7
Dependent Claim
48 words
A process for growing an oxide on an epitaxial layer as defined in claim 4 wherein said process further includes the step of applying a negative potential to the electrode surface that supports the semiconductor structure having said epitaxial layer prior to the application of said positive potential.
Claim 8
Dependent Claim
38 words
A process for growing an oxide on an epitaxial layer as defined in claim 4 wherein the step of flowing oxygen and water vapor into the growth chamber includes the step of bubbling oxygen through a water chamber.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-02-21 | 1986-08-23 | 1987-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-02-21 | 1990-08-23 | 1991-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-02-21 | 1994-08-23 | 1995-02-22 | $7700.00 | Window Closed / Lapsed |