Patent US5695567A successfully refreshed from Google Patents.
US5695567A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Susceptor for a device for epitaxially growing objects and such a device
Assignee: Wolfspeed Inc
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Filing: 1996-03-15
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Granted: 1997-12-09
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Expires: 2016-03-15
Abstract
Abstract A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, includes plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls. The wall pieces are made of a material which may be heated by induction and are secured to each other to form the susceptor. A channel is defined by susceptor walls adapted to receive the substrate and through which a source material for the growth is to be fed. At least one SiC-plate is inserted to cover at least one of the top and bottom walls and to extend between and separate the lateral walls and the at least one of the top and bottom walls.
Inventors
- 👤 Olle Kordina
- 👤 Jan-Olov Fornell
- 👤 Rune Berge
- 👤 Roger Nilsson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:12
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/12; C30B31/00; C30B31/06; C30B31/14
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
146 words
A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, said susceptor including: 1) plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls, said wall pieces being made of a material which may be heated by induction created by heating means; 2) means for securing said wall pieces to each other to form said susceptor; 3) a channel defined by susceptor walls and adapted to receive said substrate and through which a source material for the growth is to be fed; and 4) at least one SiC plate inserted to cover at least one of said top and bottom walls and to extend between and separate said lateral walls and said at least one of said top and bottom walls.
Claim 2
Dependent Claim
146 words
A susceptor for a device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate to be received in the susceptor, said susceptor including: 1) plurality of separate susceptor wall pieces defining a top wall, a bottom wall and lateral walls, said wall pieces being made of a material which may be heated by induction created by heating means; 2) means for securing said wall pieces to each other to form said susceptor; 3) a channel defined by susceptor walls and adapted to receive said substrate and through which a source material for the growth is to be fed; and 4) at least one SiC plate inserted to cover at least one of said top and bottom walls and to extend between and separate said lateral walls and said at least one of said top and bottom walls.
Claim 3
Dependent Claim
12 words
A susceptor according to claim 1 wherein the securing means comprises screws.
Claim 4
Dependent Claim
23 words
A susceptor according to claim 1, wherein the securing means are made of the same material as the wall pieces of the susceptor.
Claim 5
Dependent Claim
36 words
A susceptor according to claim 1, wherein each of the securing means extends through a lateral wall of the susceptor and into the bottom and the top wall, respectively, for securing these walls to each other.
Claim 6
Dependent Claim
15 words
A susceptor according to claim 1, wherein the susceptor wall pieces are made of graphite.
Claim 7
Dependent Claim
17 words
A susceptor according to claim 1, wherein the susceptor wall pieces are coated by a protective SiC-layer.
Claim 8
Dependent Claim
62 words
A susceptor according to claim 1, wherein a first plate made of SiC, is placed to cover said bottom wall and to extend between said lateral walls and said bottom wall and a second plate made of SiC, is placed directly under said top wall to cover said top wall and to extend between said lateral walls and said top wall piece.
Claim 9
Dependent Claim
71 words
A susceptor according to claim 7, further including at least two channels, each adapted to receive at least one substrate for the growth of at least one said object, each channel being delimited by two lateral wall pieces, a top wall piece and a bottom wall piece, and wherein a wall piece separating two adjacent channels forms the bottom wall for one channel and the top wall for the other channel.
Claim 10
Dependent Claim
44 words
A susceptor according to claim 8, wherein said first and second plates are placed on said bottom wall piece and directly under said top wall piece between two lateral wall pieces and the respective top and bottom wall of each channel in the susceptor.
Claim 11
Dependent Claim
26 words
A susceptor according to claim 1, wherein said channel is adapted to receive a substrate on which an object of SiC is to be epitaxially grown.
Claim 12
Dependent Claim
24 words
A susceptor according to claim 1, wherein said susceptor wall pieces are made of a material being well treatable by a Rf-field radiating means.
Claim 13
Independent Claim
138 words
A device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate, said device comprising: 1) a susceptor for receiving said substrate, said susceptor including a channel defined by susceptor walls and adapted to receive said substrate and through which a source material for the growth is to be fed; 2) said susceptor walls including plurality of separate wall pieces defining a top wall, a bottom wall and lateral walls; 3) means for securing said wall pieces to each other to form said susceptor; 4) heating means for heating said susceptor; and 5) at least one SiC plate inserted to cover at least one of said top and bottom walls and to extend between and separate said lateral walls and said at least one of said top and bottom walls.
Claim 14
Independent Claim
138 words
A device for epitaxially growing objects made of one of SiC, a Group 3B-nitride and alloys thereof on a substrate, said device comprising: 1) a susceptor for receiving said substrate, said susceptor including a channel defined by susceptor walls and adapted to receive said substrate and through which a source material for the growth is to be fed; 2) said susceptor walls including plurality of separate wall pieces defining a top wall, a bottom wall and lateral walls; 3) means for securing said wall pieces to each other to form said susceptor; 4) heating means for heating said susceptor; and 5) at least one SiC plate inserted to cover at least one of said top and bottom walls and to extend between and separate said lateral walls and said at least one of said top and bottom walls.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-12-08 | 2001-06-09 | 2001-12-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-12-08 | 2005-06-09 | 2005-12-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-12-08 | 2009-06-09 | 2009-12-09 | $7700.00 | Window Closed / Lapsed |