Patent EP0123424A2 successfully refreshed from Google Patents.
Patent US5677538A successfully refreshed from Google Patents.
US5677538A
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Photodetectors using III-V nitrides
Assignee: Boston University
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Filing: 1995-07-07
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Granted: 1997-10-14
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Expires: 2015-07-07
Abstract
Abstract A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.
Inventors
- 👤 Theodore D. Moustakas
- 👤 Mira Misra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:05
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F71/00; H10F71/127; H10F71/1276; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
42 words
A detector comprising at least one single crystal III-V nitride film deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, wherein the (μτ) product of the detector is controlled by varying parameters of the deposition process for the single crystal film.
Claim 2
Dependent Claim
42 words
A detector comprising at least one single crystal III-V nitride film deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy, wherein the (μτ) product of the detector is controlled by varying parameters of the deposition process for the single crystal film.
Claim 3
Dependent Claim
9 words
The detector of claim 1 being a UV detector.
Claim 4
Dependent Claim
9 words
The detector of claim 1 being an x-ray detector.
Claim 5
Dependent Claim
10 words
The detector of claim 1 being an alpha particle detector.
Claim 6
Dependent Claim
10 words
The detector of claim 1 being a visible light detector.
Claim 7
Dependent Claim
96 words
A photodetector comprising: a III-V nitride film having a predetermined (μτ) product; a first electrode deposited on a surface of the film; a second electrode deposited on the surface of the film, the second electrode being spaced from the first electrode; and, a voltage source connected across the first and second electrodes, said voltage source creating an electric field within the film; wherein when the surface of the film upon which the electrodes are deposited is subjected to a photon illumination, electron hole pairs are created and flow within the film because of the electric field.
Claim 8
Dependent Claim
96 words
A photodetector comprising: a III-V nitride film having a predetermined (μτ) product; a first electrode deposited on a surface of the film; a second electrode deposited on the surface of the film, the second electrode being spaced from the first electrode; and, a voltage source connected across the first and second electrodes, said voltage source creating an electric field within the film; wherein when the surface of the film upon which the electrodes are deposited is subjected to a photon illumination, electron hole pairs are created and flow within the film because of the electric field.
Claim 9
Dependent Claim
15 words
The photodetector of claim 6 wherein the III-V nitride film comprises a single crystal film.
Claim 10
Dependent Claim
46 words
The photodetector of claim 6 wherein the III-V nitride film comprises a buffer layer deposited on a sapphire substrate and a single crystal film deposited on the buffer layer whereby the predetermined (μτ) product of the photodetector is controlled by varying parameters of the deposition process.
Claim 11
Dependent Claim
21 words
The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy.
Claim 12
Dependent Claim
47 words
The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy; and, wherein the resistivity of the film is controlled by varying the microwave power used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.
Claim 13
Dependent Claim
47 words
The photodetector of claim 6 wherein the III-V nitride film is deposited by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy; and, wherein the resistivity of the film is controlled by varying the nitrogen flow used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.
Claim 14
Dependent Claim
25 words
The photodetector of claim 6 wherein the first and second electrodes are deposited so as to form ohmic contacts on the surface of the film.
Claim 15
Dependent Claim
14 words
The photodetector of claim 6 wherein the III-V nitride film is fabricated from GaN.
Claim 16
Dependent Claim
19 words
The photodetector of claim 6 wherein the III-V nitride film is fabricated from an alloy of GaN and AlN.
Claim 17
Dependent Claim
13 words
The detector of claim 6 wherein the first and second electrodes are interdigitated.
Claim 18
Dependent Claim
19 words
The photodetector of claim 6 wherein the III-V nitride film is fabricated from an alloy of GaN and InN.
Claim 19
Independent Claim
62 words
A method of making a photodetector having predetermined (μτ) product: fabricating a III-V nitride film so as to control its resistivity; depositing a first electrode on a surface of the film; depositing a second electrode on the surface of the film, the second electrode being spaced from the first electrode; and, providing a voltage source connected across the first and second electrodes.
Claim 20
Independent Claim
62 words
A method of making a photodetector having predetermined (μτ) product: fabricating a III-V nitride film so as to control its resistivity; depositing a first electrode on a surface of the film; depositing a second electrode on the surface of the film, the second electrode being spaced from the first electrode; and, providing a voltage source connected across the first and second electrodes.
Claim 21
Dependent Claim
17 words
The method of claim 17 wherein the step of fabricating further comprises fabricating a single crystal film.
Claim 22
Dependent Claim
23 words
The method of claim 18 wherein the step of fabricating further comprises separating the single crystal III-V nitride film from the dissolvable layer.
Claim 23
Dependent Claim
31 words
The method of claim 17 wherein the step of fabricating further comprises fabricating a dissolvable layer on a substrate and fabricating a single crystal III-V nitride film on the dissolvable layer.
Claim 24
Dependent Claim
29 words
The method of claim 17 wherein the step of fabricating further comprises fabricating a buffer layer on a substrate and fabricating a single crystal film upon the buffer layer.
Claim 25
Dependent Claim
18 words
The method of claim 17 wherein the step of fabricating comprises electron cyclotron resonance plasma-assisted molecular beam epitaxy.
Claim 26
Dependent Claim
19 words
The method of claim 17 wherein the predetermined (μτ) product is controlled by varying parameters of the fabricating step.
Claim 27
Dependent Claim
32 words
The method of claim 22 wherein the predetermined (μτ) product of the photodetector is controlled by varying the microwave power used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.
Claim 28
Dependent Claim
32 words
The method of claim 22 wherein the predetermined (μτ) product of the photodetector is controlled by varying the nitrogen flow used in the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy process.
Claim 29
Dependent Claim
19 words
The method of claim 17 wherein the first and second electrodes are deposited so as to form ohmic contacts.
Claim 30
Dependent Claim
19 words
The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from GaN.
Claim 31
Dependent Claim
24 words
The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from an alloy of GaN and AlN.
Claim 32
Dependent Claim
24 words
The method of claim 17 wherein the step of fabricating further comprises fabricating the III-V nitride film from an alloy of GaN and InN.
Claim 33
Dependent Claim
61 words
The method of claim 17 wherein the steps of depositing first and second electrodes further comprises: depositing a first electrode on the surface of the film, said first electrode having fingers; depositing a second electrode on the surface of the film, said second electrode having fingers, said fingers of said second electrode being interdigitated with said fingers of said first electrode.
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