US5290393A
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Crystal growth method for gallium nitride-based compound semiconductor
Assignee: Nichia Corp
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Filing: 1992-01-28
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Granted: 1994-03-01
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Expires: 2012-01-28
Abstract
Abstract Crystals of a gallium nitride-based compound semiconductor are grown on the surface of a buffer layer represented by formula GaXAl1-XN (0<*<=1). The crystallinity of the gallium nitride-based compound semiconductor grown on the surface of the buffer layer can be drastically improved.
Inventors
- 👤 Shuji Nakamura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:49
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/403; H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/825; H10H20/8252; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3216; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3416; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
72 words
A crystal growth method for a gallium nitride-based compound semiconductor, comprising the steps of: vapor-growing a buffer layer represented by the formula Ga X Al 1-x N (0>×≦1) having a thickness of 0.001-0.5 μm on a substrate at a first temperature of 200° C. to 900° C.; and vapor-growing a semiconductor layer represented by the same formula on said formed buffer layer at a second temperature ranging from 900° to 1150° C.
Claim 2
Dependent Claim
72 words
A crystal growth method for a gallium nitride-based compound semiconductor, comprising the steps of: vapor-growing a buffer layer represented by the formula Ga X Al 1-x N (0>×≦1) having a thickness of 0.001-0.5 μm on a substrate at a first temperature of 200° C. to 900° C.; and vapor-growing a semiconductor layer represented by the same formula on said formed buffer layer at a second temperature ranging from 900° to 1150° C.
Claim 3
Dependent Claim
71 words
A method according to claim 1, further comprising the steps of: vapor-growing a second buffer layer represented by formula Ga X Al 1-X N (0>×≦1) on said gallium nitride-based compound semiconductor layer at a third temperature lower than the second temperature; and vapor growing a semiconductor layer represented by the formula Ga x Al 1-x N (0<×<1) on said second buffer layer at a fourth temperature higher than the third temperature.
Claim 4
Dependent Claim
21 words
A method according to claim 1, further comprising the step of doping an n- or p-type impurity in said buffer layer.
Claim 5
Dependent Claim
24 words
A method according to claim 3, wherein said n-type impurity is at least one material selected from the group consisting of Si and Sn.
Claim 6
Dependent Claim
26 words
A method according to claim 3, wherein said p-type impurity is at least one material selected from the group consisting of Zn, Mg, Ca, and Be.
Claim 7
Dependent Claim
25 words
A method according to claim 3, wherein the doping amount of said n- or p-type impurity is 10 17 to 10 20 /cm 3 .
Claim 8
Dependent Claim
21 words
A method according to claim 1, further comprising the step of doping an n- or p-type impurity in said semiconductor layer.
Claim 9
Dependent Claim
24 words
A method according to claim 7, wherein said n-type impurity is at least one material selected from the group consisting of Si and Sn.
Claim 10
Dependent Claim
26 words
A method according to claim 7, wherein said p-type impurity is at least one material selected from the group consisting of Zn, Mg, Ca, and Be.
Claim 11
Dependent Claim
25 words
A method according to claim 7, wherein the doping amount of said n- or p-type impurity is 10 17 to 10 20 /cm 3 .
Claim 12
Dependent Claim
46 words
A method according to claim 1, wherein said buffer layer is grown using a reaction gas containing at least one gas selected from the group consisting of trimethyl gallium and triethylgallium, and at least one gas selected from the group consisting of ammonia gas and hydrazine.
Claim 13
Dependent Claim
12 words
A method according to claim 11, wherein said reaction gas contains trimethylaluminum.
Claim 14
Dependent Claim
25 words
A method according to claim 11, wherein said reaction gas contains at least one gas selected from the group consisting of cyclopentadienylmagnesium, diethylzinc, and trimethylzinc.
Claim 15
Dependent Claim
23 words
A method according to claim 1, wherein said substrate comprises one material selected from the group consisting of sapphire, Si, SiC and GaAs.
Claim 16
Dependent Claim
27 words
A method according to claim 9, further comprising, after the formation of said semiconductor layer, the step of radiating an electron beam onto the formed semiconductor layer.
Claim 17
Dependent Claim
67 words
The method according to claim 1, further comprising the additional steps of: vapor-growing a second buffer layer represented by the formula Ga X Al 1-x N (0<×≦1) on said gallium nitride-based compound semiconductor layer at a third temperature lower than said second temperature; and vapor-growing a semiconductor layer represented by the same formula on said second buffer layer at a fourth temperature higher than said third temperature.
References Cited (Backward Citations)
US3683240A
Cited
US3829556A
Cited
US4153905A
Cited
US4476620A
Cited
US4473938A
Cited
US4855249A
Cited
US4911102A
Cited
DE3802732A1
Cited
JPS6430110A
Cited
JPH0281483A
Cited
DE4006449A1
Cited
US5122845A
Cited
JPH02257678A
Cited
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