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US5653811A Expired / Lapsed US ⏱️ 0.0 years remaining

System for the plasma treatment of large area substrates

Assignee: Individual
•
Filing: 1995-07-19
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Granted: 1997-08-05
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Expires: 2015-07-19
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Abstract

Abstract A plasma system for processing large area substrates. In one embodiment the system includes a plurality of radiofrequency (rf) plasma sources removably attached to the rf transparent windows of a processing chamber. The number and distribution of sources is varied to provide the size and uniformity of the plasma field required to treat the substrate. A plurality of plasma probes, such as Langmuir probes, Faraday cups and optical sensor are positioned within the chamber and in electrical communication with the plasma sources adjust the rf field produced by the individual sources to maintain the desired degree of field uniformity.

Inventors

  • 👤 Chung Chan

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 16:13
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/02; H01J37/20; H01J37/32; H01J37/32009; H01J37/32082; H01J37/32917; H01J37/32935

Claims Analysis

Total Claims: 17
Claim 1
Independent Claim 98 words
A system for treating a substrate with a plasma, said system comprising: a vacuum chamber in which a plasma is generated and having a plurality of substantially planar rf transparent windows on the surface of said chamber; an rf generator; at least two rf sources, each external to said vacuum chamber and each said rf source electrically connected to said rf generator and juxtaposed to a respective one of said plurality rf transparent windows, and operative to generate said plasma in the vacuum chamber; said rf sources operative to produce a local, substantially uniform plasma proximate said substrate.
Claim 2
Independent Claim 98 words
A system for treating a substrate with a plasma, said system comprising: a vacuum chamber in which a plasma is generated and having a plurality of substantially planar rf transparent windows on the surface of said chamber; an rf generator; at least two rf sources, each external to said vacuum chamber and each said rf source electrically connected to said rf generator and juxtaposed to a respective one of said plurality rf transparent windows, and operative to generate said plasma in the vacuum chamber; said rf sources operative to produce a local, substantially uniform plasma proximate said substrate.
Claim 3
Dependent Claim 30 words
The system of claim 1 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.
Claim 4
Dependent Claim 46 words
The system of claim 2 further comprising: at least one sensor measuring at least one characteristic of said plasma; and a controller receiving from said at least one sensor at least one characteristic of said plasma and controlling said plurality of tuning circuits in response thereto.
Claim 5
Dependent Claim 18 words
The system of claim 1 wherein each of said plurality of rf transparent windows is constructed of quartz.
Claim 6
Dependent Claim 18 words
The system of claim 1 wherein each of said plurality of rf transparent windows is constructed of glass.
Claim 7
Dependent Claim 15 words
The system of claim 3 wherein said at least one sensor is a Langmuir probe.
Claim 8
Dependent Claim 17 words
The system of claim 3 wherein said at least one sensor is an array of Faraday cups.
Claim 9
Dependent Claim 23 words
The system of claim 7 wherein said system further comprises a wafer holder and said Faraday cups are attached to said wafer holder.
Claim 10
Dependent Claim 26 words
The system of claim 7 wherein said system further comprises a test wafer having a plurality of Faraday cups on the surface of said test wafer.
Claim 11
Dependent Claim 15 words
The system of claim 3 wherein said at least one sensor is an optical sensor.
Claim 12
Dependent Claim 25 words
The system of claim 2 wherein said at least one tuning circuit comprises a tuning capacitor electrically connected in parallel with said respective RF source.
Claim 13
Dependent Claim 22 words
The system of claim 1 wherein each of said rf sources is independently adjustable to maintain the uniformity of said local plasma.
Claim 14
Dependent Claim 80 words
A plasma source comprising: a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture.
Claim 15
Dependent Claim 80 words
A plasma source comprising: a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture.
Claim 16
Dependent Claim 147 words
An inline continuous plasma processing system comprising: a housing including a plurality of baffles located within said housing; a plurality of RF plasma sources positioned along said housing between said baffles; each said plasma source comprising: a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture into said housing; and a conveyor belt located within said housing, said conveyor belt conveying a wafer within said housing and below a plasma generated by each of said RF plasma sources between said baffles.
Claim 17
Dependent Claim 147 words
An inline continuous plasma processing system comprising: a housing including a plurality of baffles located within said housing; a plurality of RF plasma sources positioned along said housing between said baffles; each said plasma source comprising: a shield open at a first end and having a shield aperture at a second end; an rf antenna, positioned within the shield; and a dielectric window positioned to enclose said first end of said shield, said dielectric window defining a dielectric window aperture and having a dielectric gas inlet tube extending from said dielectric window aperture and through said shield aperture, to permit gas to pass through said shield and through said dielectric window aperture into said housing; and a conveyor belt located within said housing, said conveyor belt conveying a wafer within said housing and below a plasma generated by each of said RF plasma sources between said baffles.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-08-04 2001-02-03 2001-08-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-08-04 2005-02-03 2005-08-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-08-04 2009-02-03 2009-08-05 $7700.00 Window Closed / Lapsed

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