US5607880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating multilevel interconnections in a semiconductor integrated circuit
Assignee: NEC Corp
•
Filing: 1993-04-28
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Granted: 1997-03-04
•
Expires: 2013-04-28
Abstract
Abstract The invention provides a fabrication method of multilevel interconnections for semiconductor integrated circuits. Aluminium wiring lines are formed on a first silicon oxide film overlying a silicon substrate. A second silicon oxide film is grown by a plasma chemical vapor deposition on the wiring lines and the first silicon oxide film for a specific surface treatment of either an etching with use of fluorine compounds or an ion-implantation of fluorine compounds. A third silicon oxide film is grown on the second silicon oxide film by an atmospheric pressure chemical vapor deposition with use of organic silicon compounds and an oxygen including ozone.
Inventors
- 👤 Mieko Suzuki
- 👤 Tetsuya Homma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 23:10
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10W20/093; H10W20/095; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 39
Claim 1
Independent Claim
189 words
A method for fabricating a multilevel interconnection for a semiconductor integrated circuit device, said method comprising the steps of: 1) forming a first silicon oxide film on a silicon substrate; 2) forming first metal wiring lines on said first silicon oxide film; 3) growing a second silicon oxide film on both said metal wiring lines and said first silicon oxide film by chemical vapor deposition; 4) adhering fluorine ions onto the entire surface of said second silicon oxide film by subjecting said entire surface of said second silicon oxide film to dry etching using a fluorine compound by which said entire surface of said second silicon oxide film is etched by approximately 0.1 micrometers; 5) growing a third silicon oxide film on said fluorine-adhered second silicon oxide film by chemical vapor deposition using an organic silicon compound; 6) forming through holes in said second and third silicon oxide films directly over said first metal wiring lines; and 7) forming second metal wiring lines on said third silicon oxide film directly over said first metal wiring fines, said first and second metal wiring lines being connected through said through holes.
Claim 2
Independent Claim
189 words
A method for fabricating a multilevel interconnection for a semiconductor integrated circuit device, said method comprising the steps of: 1) forming a first silicon oxide film on a silicon substrate; 2) forming first metal wiring lines on said first silicon oxide film; 3) growing a second silicon oxide film on both said metal wiring lines and said first silicon oxide film by chemical vapor deposition; 4) adhering fluorine ions onto the entire surface of said second silicon oxide film by subjecting said entire surface of said second silicon oxide film to dry etching using a fluorine compound by which said entire surface of said second silicon oxide film is etched by approximately 0.1 micrometers; 5) growing a third silicon oxide film on said fluorine-adhered second silicon oxide film by chemical vapor deposition using an organic silicon compound; 6) forming through holes in said second and third silicon oxide films directly over said first metal wiring lines; and 7) forming second metal wiring lines on said third silicon oxide film directly over said first metal wiring fines, said first and second metal wiring lines being connected through said through holes.
Claim 3
Dependent Claim
20 words
The fabrication method as claimed in claim 1, wherein said first silicon oxide film is formed by chemical vapor deposition.
Claim 4
Dependent Claim
25 words
The fabrication method as claimed in claim 1, wherein in said third step, said second silicon oxide film is grown by plasma chemical vapor deposition.
Claim 5
Dependent Claim
30 words
The fabrication method as claimed in claim 3, wherein in said second step said second silicon oxide film has a thickness in the range from 0.2 micrometers to 0.5 micrometers.
Claim 6
Dependent Claim
57 words
The fabrication method as claimed in claim 1, wherein said dry etching is accomplished with use of CHF 3 and O 2 under the condition of a flow rate ratio of O 2 to the total flow rate in the range from 0% to 25%, a RF power of 1200 W and a pressure of 0.5 Pa.
Claim 7
Dependent Claim
20 words
The fabrication method as claimed in claim 5, wherein said dry etching uses a cathode couple mode dry etching apparatus.
Claim 8
Dependent Claim
20 words
The fabrication method as claimed in claim 5, wherein said dry etching uses an anode couple mode dry etching apparatus.
Claim 9
Dependent Claim
38 words
The fabrication method as claimed in claim 1, wherein said fluorine compound is from the group consisting of CHF 3 /O 2 CF 4 , C 2 F 6 , SF 6 and CCl 2 F 2 .
Claim 10
Dependent Claim
45 words
The fabrication method as claimed in claim 1, wherein said chemical vapor deposition in said fifth step is atmospheric pressure chemical vapor deposition using ozone and tetraethoxysilane (TEOS) under the condition that a flow rate ratio of ozone to tetraethoxysilane (TEOS) is 8:1 or more.
Claim 11
Dependent Claim
20 words
The fabrication method as claimed in claim 9, wherein said flow rate ratio of ozone to tetraethoxysilane (TEOS) is 20:1.
Claim 12
Dependent Claim
65 words
The fabrication method as claimed in claim 1, wherein said organic silicon compound comprises at least any one of SiH(R) 3 , SiH(OR) 3 , Si(R) 4 , Si(OR) 4 , (OSi(R) 3 ) 2 , (OSi(OR) 3 ) 2 , (OSi(R) 2 ) 3 , (OSi(OR) 2 ) 3 , (OSi(R) 2 ) 4 and (OSi(OR) 2 ) 4 , where R is alkyl-radical.
Claim 13
Dependent Claim
26 words
The fabrication method as claimed in claim 1, wherein said third silicon oxide film has a thickness in the range from 0.5 micrometers to 1.5 micrometers.
Claim 14
Dependent Claim
23 words
The fabrication method as claimed in claim 1, wherein said chemical vapor deposition in said fifth step is low pressure chemical vapor deposition.
Claim 15
Dependent Claim
23 words
The fabrication method as claimed in claim 1, wherein said chemical vapor deposition in said fifth step is high pressure chemical vapor deposition.
Claim 16
Dependent Claim
35 words
The fabrication method as claimed in claim 1, wherein said first and second metal wiring lines is from the group consisting of aluminium, an aluminium alloy, a titanium alloy, a metal silicide, gold and polysilicon.
Claim 17
Independent Claim
248 words
A method of fabricating a multilevel interconnection for a semiconductor integrated circuit device, said method comprising the steps of: 1) forming a first silicon oxide film on a silicon substrate; 2) forming first metal wiring lines on said first silicon oxide film; 3) growing a second silicon oxide film on both said metal wiring lines and said first silicon oxide film by chemical vapor deposition; 4) adhering fluorine ions onto the entire surface said second silicon oxide film by subjecting said entire surface of said second silicon oxide film to dry etching using a fluorine compound by which said entire surface of said second silicon oxide film is etched by approximately 0.1 micrometers; 5) growing a third silicon oxide film on said fluorine adhered second silicon oxide film by chemical vapor deposition using an organic silicon compound; 6) forming a dielectric layer on said third silicon oxide film by both spin coating and a subsequent heat treatment; 7) subjecting said dielectric layer and subsequently said third silicon oxide film to an etch back treatment by dry etching; 8) growing a fourth silicon oxide film on said third silicon oxide film by plasma chemical vapor deposition; 9) forming through holes in said second, third and fourth silicon oxide films directly over said first metal wiring lines; and 10) forming second metal wiring lines on said third silicon oxide film directly over said first metal wiring lines, said first and second metal wiring lines being connected through said through holes.
Claim 18
Independent Claim
248 words
A method of fabricating a multilevel interconnection for a semiconductor integrated circuit device, said method comprising the steps of: 1) forming a first silicon oxide film on a silicon substrate; 2) forming first metal wiring lines on said first silicon oxide film; 3) growing a second silicon oxide film on both said metal wiring lines and said first silicon oxide film by chemical vapor deposition; 4) adhering fluorine ions onto the entire surface said second silicon oxide film by subjecting said entire surface of said second silicon oxide film to dry etching using a fluorine compound by which said entire surface of said second silicon oxide film is etched by approximately 0.1 micrometers; 5) growing a third silicon oxide film on said fluorine adhered second silicon oxide film by chemical vapor deposition using an organic silicon compound; 6) forming a dielectric layer on said third silicon oxide film by both spin coating and a subsequent heat treatment; 7) subjecting said dielectric layer and subsequently said third silicon oxide film to an etch back treatment by dry etching; 8) growing a fourth silicon oxide film on said third silicon oxide film by plasma chemical vapor deposition; 9) forming through holes in said second, third and fourth silicon oxide films directly over said first metal wiring lines; and 10) forming second metal wiring lines on said third silicon oxide film directly over said first metal wiring lines, said first and second metal wiring lines being connected through said through holes.
Claim 19
Dependent Claim
16 words
The fabrication method as claimed in claim 16, wherein said dielectric layer comprises a spin-on-glass film.
Claim 20
Dependent Claim
40 words
The fabrication method as claimed in claim 17, wherein said spin-on-glass film is formed by both spin coating at a rotation rate of 3000 rpm and a subsequent heat treatment at 300° C. for an hour in a nitrogen atmosphere.
Claim 21
Dependent Claim
42 words
The fabrication method as claimed in claim 17, wherein in said seventh step said dry etching for said etch back treatment is accomplished under the condition of a selective ratio of said third silicon oxide film to said spin-on-glass film is 1:2.
Claim 22
Dependent Claim
17 words
The fabrication method as claimed in claim 16, wherein said dielectric layer comprises a polyimide resin film.
Claim 23
Dependent Claim
16 words
The fabrication method as claimed in claim 16, wherein said dielectric layer comprises a photo-resist film.
Claim 24
Dependent Claim
26 words
The fabrication method as claimed in claim 16, wherein said fourth silicon oxide film has a thickness in the range from 0.2 micrometers to 0.5 micrometers.
Claim 25
Dependent Claim
21 words
The fabrication method as claimed in claim 16, wherein said first silicon oxide film is formed by a chemical vapor deposition.
Claim 26
Dependent Claim
25 words
The fabrication method as claimed in claim 16, wherein in said third step, said second silicon oxide film is grown by plasma chemical vapor deposition.
Claim 27
Dependent Claim
30 words
The fabrication method as claimed in claim 24, wherein in said second step said second silicon oxide film has a thickness in the range from 0.2 micrometers to 0.5 micrometers.
Claim 28
Dependent Claim
42 words
The fabrication method as claimed in claim 16, wherein in said fourth step said dry etching etches said second silicon oxide film so as to have said second silicon oxide film remain on opposite side walls of said first metal wiring lines.
Claim 29
Dependent Claim
57 words
The fabrication method as claimed in claim 16, wherein said dry etching is accomplished with use of CHF 3 and O 2 under the condition of a flow rate ratio of O 2 to the total flow rate in the range from 0% to 25%, a RF power of 1200 W and a pressure of 0.5 Pa.
Claim 30
Dependent Claim
20 words
The fabrication method as claimed in claim 27, wherein said dry etching uses a cathode couple mode dry etching apparatus.
Claim 31
Dependent Claim
20 words
The fabrication method as claimed in claim 26, wherein said dry etching uses an anode couple mode dry etching apparatus.
Claim 32
Dependent Claim
38 words
The fabrication method as claimed in claim 16, wherein said fluorine compound is from the group consisting of CHF 3 /O 2 CF 4 , C 2 F 6 , SF 6 and CCl 2 F 2 .
Claim 33
Dependent Claim
46 words
The fabrication method as claimed in claim 16, wherein said chemical vapor deposition in said fifth step is an atmospheric pressure chemical vapor deposition using ozone and tetraethoxysilane (TEOS) under the condition that a flow rate ratio of ozone to tetraethoxysilane (TEOS) is 8:1 or more.
Claim 34
Dependent Claim
20 words
The fabrication method as claimed in claim 31, wherein said flow rate ratio of ozone to tetraethoxysilane (TEOS) is 20:1.
Claim 35
Dependent Claim
65 words
The fabrication method as claimed in claim 16, wherein said organic silicon compound is from the group consisting of SiH(R) 3 , SiH(OR) 3 , Si(R) 4 , Si(OR) 4 , (OSi(R) 3 ) 2 , (OSi(OR) 3 ) 2 , (OSi(R) 2 ) 3 , (OSi(OR) 2 ) 3 , (OSi(R) 2 ) 4 and (OSi(OR) 2 ) 4 , where R is alkyl-radical.
Claim 36
Dependent Claim
26 words
The fabrication method as claimed in claim 33, wherein said third silicon oxide film has a thickness in the range from 0.5 micrometers to 1.5 micrometers.
Claim 37
Dependent Claim
23 words
The fabrication method as claimed in claim 16, wherein said chemical vapor deposition in said fifth step is low pressure chemical vapor deposition.
Claim 38
Dependent Claim
23 words
The fabrication method as claimed in claim 16, wherein said chemical vapor deposition in said fifth step is high pressure chemical vapor deposition.
Claim 39
Dependent Claim
35 words
The fabrication method as claimed in claim 16, wherein said first and second metal wiring lines is from the group consisting of aluminium, an aluminium alloy, a titanium alloy, a metal silicide, gold and polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-03 | 2000-09-02 | 2001-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-03 | 2004-09-02 | 2005-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-03 | 2008-09-02 | 2009-03-04 | $7700.00 | Window Closed / Lapsed |