US5344797A
Expired / Lapsed
US
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Method of forming interlevel dielectric for integrated circuits
Assignee: Nokia Bell Labs
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Filing: 1992-10-30
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Granted: 1994-09-06
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Expires: 2012-10-30
Abstract
Abstract A method of forming an interlevel dielectric suitable for use with semiconductor integrated circuits is disclosed. The dielectric illustratively includes a triple layer sandwich of ozone-TEOS formed between two layers of plasma-enhanced TEOS. The dielectric is capable of filling high-aspect ratio trenches between runners. The ozone-TEOS is formed at a high pressure (approximately 90 Torr) to reduce hydrogen absorption. The reduced-hydrogen content ozone-TEOS is less susceptible to moisture formation and, therefore, presents less risk of degrading subsequently formed aluminum runners.
Inventors
- 👤 Chien-Shing Pai
- 👤 Yih-Cheng Shih
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:28
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/098; Y; Y10; Y10S; Y10S148/00; Y10S148/118
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
86 words
A method of semiconductor integrated circuit fabrication comprising: forming a first dielectric overlying a substrate, said dielectric being formed in a reactor having a total chamber pressure and utilizing a TEOS precursor gas containing hydrogen and utilizing ozone; said reactor having a pressure of approximately 90 Torr and an ozone concentration of 8-12 weight percent, a TEOS flow rate of approximately 1000 sccm and an oxygen flow rate of 1500-2500 sccm whereby the hydrogen content of said dielectric after formation is less than 10 atomic percent.
Claim 2
Independent Claim
86 words
A method of semiconductor integrated circuit fabrication comprising: forming a first dielectric overlying a substrate, said dielectric being formed in a reactor having a total chamber pressure and utilizing a TEOS precursor gas containing hydrogen and utilizing ozone; said reactor having a pressure of approximately 90 Torr and an ozone concentration of 8-12 weight percent, a TEOS flow rate of approximately 1000 sccm and an oxygen flow rate of 1500-2500 sccm whereby the hydrogen content of said dielectric after formation is less than 10 atomic percent.
Claim 3
Independent Claim
132 words
A method of semiconductor integrated circuit fabrication comprising: forming a first silicon dioxide dielectric overlying a substrate in a reactor chamber; forming a second silicon dioxide dielectric upon said first dielectric, said formation taking place in the same said reactor chamber and utilizing ozone and a precursor gas containing hydrogen; CHARACTERIZED IN THAT the total chamber pressure of said reactor during formation of said second dielectric is chosen at a sufficiently high value so that the hydrogen content of said second dielectric after formation is less than 10 atomic percent; etching back said second dielectric in said reactor to expose portions of said first dielectric; and then forming a third dielectric in said same reaction chamber, said third dielectric covering said second dielectric and the said exposed portions of said first dielectric.
Claim 4
Independent Claim
132 words
A method of semiconductor integrated circuit fabrication comprising: forming a first silicon dioxide dielectric overlying a substrate in a reactor chamber; forming a second silicon dioxide dielectric upon said first dielectric, said formation taking place in the same said reactor chamber and utilizing ozone and a precursor gas containing hydrogen; CHARACTERIZED IN THAT the total chamber pressure of said reactor during formation of said second dielectric is chosen at a sufficiently high value so that the hydrogen content of said second dielectric after formation is less than 10 atomic percent; etching back said second dielectric in said reactor to expose portions of said first dielectric; and then forming a third dielectric in said same reaction chamber, said third dielectric covering said second dielectric and the said exposed portions of said first dielectric.
Claim 5
Dependent Claim
17 words
The method of claim 2 in which the pressure of said precursor gas is approximately 90 Torr.
Claim 6
Dependent Claim
12 words
The method of claim 2 in which the precursor gas is TEOS.
References Cited (Backward Citations)
US4872947A
Cited
EP0388862A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-05 | 1998-03-07 | 1998-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-05 | 2002-03-07 | 2002-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-05 | 2006-03-07 | 2006-09-06 | $7700.00 | Window Closed / Lapsed |