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Optical exposure method and device formed by the method

Assignee: Canon Inc
•
Filing: 1995-05-31
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Granted: 1997-02-18
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Expires: 2015-05-31
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Abstract

Abstract A transfer magnification correcting method suited for use in scanning exposure by use of synchrotron radiation or the like. In proximity exposure according to the scanning exposure method by use of synchrotron radiation, the magnification in the scanning direction is corrected by relatively moving a wafer and a mask simultaneously with the scanning. Also, the overall correction of the magnification is performed by changing a proximity gap or adjusting the temperature of the mask or the wafer. As a result, it is possible to correct the transfer magnification separately in the vertical and horizontal directions.

Inventors

  • 👤 Mitsuaki Amemiya
  • 👤 Yutaka Watanabe

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 11:16
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70058; G03F7/70075; G03F7/20; G03F7/2037; G03F7/2039; G03F7/70216; G03F7/7035; G03F7/70358; G03F7/708; G03F7/70858; G03F7/70866; G03F7/70875; G03F9/00; G03F9/70; G03F9/7003; G03F9/7023; G03F9/703

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 79 words
A method of transferring a pattern formed on a mask to a wafer by exposure with an X-ray beam, said method comprising the steps of: positioning the mask and the wafer in a predetermined relation to each other; relatively performing X-ray beam scanning in a scanning direction in relation to the mask and the wafer; and relatively moving the wafer and the mask in the scanning direction simultaneously with the beam scanning, so as to change the transfer magnification.
Claim 2
Independent Claim 79 words
A method of transferring a pattern formed on a mask to a wafer by exposure with an X-ray beam, said method comprising the steps of: positioning the mask and the wafer in a predetermined relation to each other; relatively performing X-ray beam scanning in a scanning direction in relation to the mask and the wafer; and relatively moving the wafer and the mask in the scanning direction simultaneously with the beam scanning, so as to change the transfer magnification.
Claim 3
Dependent Claim 21 words
A method according to claim 1, wherein said beam scanning step is performed by deviating the beam with a scanning mirror.
Claim 4
Dependent Claim 21 words
A method according to claim 1, wherein said beam scanning step is performed by integrally moving the mask and the wafer.
Claim 5
Dependent Claim 21 words
A method according to claim 1, wherein said beam scanning step is performed by moving a shutter relative to the beam.
Claim 6
Dependent Claim 14 words
A method according to claim 1, wherein the beam comprises a synchrotron radiation beam.
Claim 7
Dependent Claim 20 words
A method according to claim 1, further comprising the step of adjusting a gap between the wafer and the mask.
Claim 8
Dependent Claim 22 words
A method according to claim 1, further comprising the step of adjusting the temperature of one of the wafer and the mask.
Claim 9
Independent Claim 83 words
A device formed by a method of transferring a pattern formed on a mask to a wafer by exposure with an X-ray beam, said method comprising the steps of: positioning the mask and the wafer in a predetermined relation to each other; relatively performing X-ray beam scanning in a scanning direction in relation to the mask and the wafer; and relatively moving the wafer and the mask in the scanning direction simultaneously with the beam scanning, so as to change the transfer magnification.
Claim 10
Independent Claim 83 words
A device formed by a method of transferring a pattern formed on a mask to a wafer by exposure with an X-ray beam, said method comprising the steps of: positioning the mask and the wafer in a predetermined relation to each other; relatively performing X-ray beam scanning in a scanning direction in relation to the mask and the wafer; and relatively moving the wafer and the mask in the scanning direction simultaneously with the beam scanning, so as to change the transfer magnification.
Claim 11
Dependent Claim 21 words
A device according to claim 8, wherein said beam scanning step is performed by deviating the beam with a scanning mirror.
Claim 12
Dependent Claim 21 words
A device according to claim 8, wherein said beam scanning step is performed by integrally moving the mask and the wafer.
Claim 13
Dependent Claim 21 words
A device according to claim 8, wherein said beam scanning step is performed by moving a shutter relative to the beam.
Claim 14
Dependent Claim 14 words
A device according to claim 8, wherein the beam comprises a synchrotron radiation beam.
Claim 15
Dependent Claim 20 words
A device according to claim 8, further comprising the step of adjusting a gap between the wafer and the mask.
Claim 16
Dependent Claim 22 words
A device according to claim 8, further comprising the step of adjusting the temperature of one of the wafer and the mask.

References Cited (Backward Citations)

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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-02-18 2000-08-19 2001-02-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-02-18 2004-08-19 2005-02-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-02-18 2008-08-19 2009-02-18 $7700.00 Window Closed / Lapsed

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