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Patent US5595861A successfully refreshed from Google Patents.
US5595861A
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Method of selecting and applying a top antireflective coating of a partially fluorinated compound
Assignee: LSI Corp
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Filing: 1995-06-05
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Granted: 1997-01-21
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Expires: 2015-06-05
Abstract
Abstract Changing (varying, irregular) resist thickness on semiconductor wafers having irregular top surface topography or having different island sizes, affects the percent reflectance (and absorption efficiency) of incident photolithographic light, and consequently the critical dimensions of underlying features being formed (e.g., polysilicon gates). A low solvent content resist solution that can be applied as an aerosol provides a more uniform thickness resist film, eliminating or diminishing photoresist thickness variations. A top antireflective coating (TAR) also aids in uniformizing reflectance, despite resist thickness variations. The two techniques can be used alone, or together. Hence, better control over underlying gate size can be effected, without differential biasing.
Inventors
- 👤 Mario Garza
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 23:11
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/091; G03F7/16; Y; Y10; Y10S; Y10S430/00; Y10S430/151
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
198 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ); (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 - ; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
Claim 2
Independent Claim
198 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ); (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 - ; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
Claim 3
Independent Claim
213 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound having a refractive index of within a range of from about 1.30 to about 1.34 and capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ); (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 -; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
Claim 4
Independent Claim
213 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound having a refractive index of within a range of from about 1.30 to about 1.34 and capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ); (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 -; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
Claim 5
Independent Claim
208 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound having a refractive index of about 1.34 and capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ) 2 ; (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 - ; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
Claim 6
Independent Claim
208 words
A method of selecting and applying a top antireflective coating over a film of photoresist during semiconductor fabrication, comprising: a) selecting a coating of a partially fluorinated compound having a refractive index of about 1.34 and capable of adhering well to photoresist, said partially fluorinated compound selected from the group consisting of: (1) R f CH 2 CH 2 SCH 2 CH 2 CO 2 Li; (2) (R f CH 2 CH 2 O)P(O)(ONH 4 ) 2 ; (3) (R f CH 2 CH 2 O) 2 P(O)(ONH 4 ) 2 ; (4) (R f CH 2 CH 2 O)P(O)(OH) 2 ; (5) (R f CH 2 CH 2 O) 2 P(O)(OH); (6) R f CH 2 CH 2 SCH 2 CH 2 N + (CH 3 ) 3 CH 3 SO 4 - ; (7) R f CH 2 CH(OCOCH 3 )CH 2 N + (CH 3 ) 2 CH 2 CO 2 - ; and (8) R f CH 2 CH 2 SO 3 X (X=H or NH 4 ); wherein R f =F(CF 2 CF 2 ) m and m=3-8; and b) applying the coating over the photoresist to a thickness of L/4, where "L" is the wavelength of incident photolithographic light in the photoresist.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-21 | 2000-07-22 | 2001-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-21 | 2004-07-22 | 2005-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-21 | 2008-07-22 | 2009-01-21 | $7700.00 | Window Closed / Lapsed |