US4665007A — Planarization process for organic filling of deep…

Claim 1

Independent Claim 205 words

A process for forming a planarized semiconductor structure comprising: providing a silicon substrate having on the surface thereof a low trench density region and a high trench density region; applying a dielectric polymer material to said substrate to fill the trenches in said high and low trench density regions and obtain a non-planar layer of said dielectric on said surface, said non-planarity being due to inherent forming of relatively thick and thin layers of said dielectric over said low and high trench density regions, respectively; forming a relatively thin conformal first layer of a fluidizable material on said dielectric; forming a relatively thick conformal second layer of said fluidizable material on said first layer; and removing said second layer from everywhere except in the regions in direct correspondence with the underlying trenches; heating said fluidizable material to permit the same to flow forming relatively thick and thin layers of said fluidizable material over said dielectric in correspondence with said low and high trench density regions, respectively, thereby exactly compensating for the difference in thickness between said thick and thin dielectric layers; and removing said fluidizable material and dielectric material on the surface of said substrate whereby said trenches are uniformly filled at the said surface.

Claim 2

Dependent Claim 205 words

A process for forming a planarized semiconductor structure comprising: providing a silicon substrate having on the surface thereof a low trench density region and a high trench density region; applying a dielectric polymer material to said substrate to fill the trenches in said high and low trench density regions and obtain a non-planar layer of said dielectric on said surface, said non-planarity being due to inherent forming of relatively thick and thin layers of said dielectric over said low and high trench density regions, respectively; forming a relatively thin conformal first layer of a fluidizable material on said dielectric; forming a relatively thick conformal second layer of said fluidizable material on said first layer; and removing said second layer from everywhere except in the regions in direct correspondence with the underlying trenches; heating said fluidizable material to permit the same to flow forming relatively thick and thin layers of said fluidizable material over said dielectric in correspondence with said low and high trench density regions, respectively, thereby exactly compensating for the difference in thickness between said thick and thin dielectric layers; and removing said fluidizable material and dielectric material on the surface of said substrate whereby said trenches are uniformly filled at the said surface.

Claim 3

Dependent Claim 20 words

The process as recited in claim 1 wherein said fluidizable material has the same etch rate as said dielectric material.

Claim 4

Dependent Claim 13 words

The process as recited in claim 1 wherein said fluidizable material is photoresist.

Claim 5

Dependent Claim 224 words

A process for forming a planarized semiconductor structure comprising: providing a silicon substrate having on the surface thereof a low trench density region and a high trench density region; applying a dielectric polymer material to said substrate to fill the trenches in said high and low trench density regions and obtain a non-planar layer of said dielectric on said surface, said non-planarity being due to inherent forming of relatively thick and thin layers of said dielectric over said low and high trench density regions, respectively; forming a relatively thick photoresist layer over said non-planar dielectric layer; controllably exposing said photoresist using a mask which is the complement of the mask used to define trenches in said high and low trench density regions to radiation to obtain a thick blockout in correspondence with each of said trenches and a thin wetting layer of said photoresist over the remainder of said dielectric layer; heating said fluidizable material to permit the same to flow forming relatively thick and thin layers of said fluidizable material over said dielectric in correspondence with said low and high trench density regions, respectively, thereby exactly compensating for the difference in thickness between said thick and thin dielectric layers; and removing said fluidizable material and dielectric material on the surface of said substrate whereby said trenches are uniformly filled at the said surface.

Claim 6

Dependent Claim 224 words

A process for forming a planarized semiconductor structure comprising: providing a silicon substrate having on the surface thereof a low trench density region and a high trench density region; applying a dielectric polymer material to said substrate to fill the trenches in said high and low trench density regions and obtain a non-planar layer of said dielectric on said surface, said non-planarity being due to inherent forming of relatively thick and thin layers of said dielectric over said low and high trench density regions, respectively; forming a relatively thick photoresist layer over said non-planar dielectric layer; controllably exposing said photoresist using a mask which is the complement of the mask used to define trenches in said high and low trench density regions to radiation to obtain a thick blockout in correspondence with each of said trenches and a thin wetting layer of said photoresist over the remainder of said dielectric layer; heating said fluidizable material to permit the same to flow forming relatively thick and thin layers of said fluidizable material over said dielectric in correspondence with said low and high trench density regions, respectively, thereby exactly compensating for the difference in thickness between said thick and thin dielectric layers; and removing said fluidizable material and dielectric material on the surface of said substrate whereby said trenches are uniformly filled at the said surface.

Claim 7

Dependent Claim 13 words

The process as recited in claim 4 wherein said polymer material is polyimide.

Claim 8

Dependent Claim 51 words

The process as recited in claim 5 wherein said applying step comprising: applying said polyimide over said substrate; heating to a first temperature to evaporate solvents in and provide a first curing for said polyimide; and heating to a second temperature to provide a second curing and cross-linking for said polyimide.

Claim 9

Dependent Claim 15 words

The process as recited in claim 4 wherein said removing step comprises reactive ion etching.

Claim 10

Dependent Claim 265 words

The process comprising: providing a silicon substrate; reactive ion etching said substrate by placing an apertured mask on said substrate to form a relatively large number of trenches in a first region of the substrate and a relatively small number of trenches in a second region of the substrate; applying a layer of polyimide to said substrate; heating said polyimide to enable it to flow and completely fill the trenches resulting, due to the relative difference in the trench-fill volume offered by the high and low trench density regions, in relatively thin and thick layers of polyimide over said high and low trench density regions, respectively; forming a relatively thick conformal photoresist layer over said polyimide; exposing the photoresist through a mask which is the inverse of said apertured mask to radiation of a predetermined dose for a predetermined time to obtain thick trench blockout mask sections on said polyimide in correspondence with each of the trenches thereunder and a thin layer of said photoresist over the remainder of the polyimide; heating the photoresist to a temperature to cause said blockout mask section to flow, with the aid of said thin photoresist layer, whereby said blockout sections corresponding to the high and low trench density regions coalesce into a first and second single mass, respectively, each of said masses having a substantially horizontal upper surface and exactly compensate for the difference in the thickness of the polyimide layer in the high and low trench density regions; and reactive ion etching until all of said photoresist and polyimide on the surface of said substrate is removed.

Claim 11

Dependent Claim 265 words

The process comprising: providing a silicon substrate; reactive ion etching said substrate by placing an apertured mask on said substrate to form a relatively large number of trenches in a first region of the substrate and a relatively small number of trenches in a second region of the substrate; applying a layer of polyimide to said substrate; heating said polyimide to enable it to flow and completely fill the trenches resulting, due to the relative difference in the trench-fill volume offered by the high and low trench density regions, in relatively thin and thick layers of polyimide over said high and low trench density regions, respectively; forming a relatively thick conformal photoresist layer over said polyimide; exposing the photoresist through a mask which is the inverse of said apertured mask to radiation of a predetermined dose for a predetermined time to obtain thick trench blockout mask sections on said polyimide in correspondence with each of the trenches thereunder and a thin layer of said photoresist over the remainder of the polyimide; heating the photoresist to a temperature to cause said blockout mask section to flow, with the aid of said thin photoresist layer, whereby said blockout sections corresponding to the high and low trench density regions coalesce into a first and second single mass, respectively, each of said masses having a substantially horizontal upper surface and exactly compensate for the difference in the thickness of the polyimide layer in the high and low trench density regions; and reactive ion etching until all of said photoresist and polyimide on the surface of said substrate is removed.

Claim 12

Dependent Claim 21 words

The process as recited in claim 8 wherein the thickness of said thick photoresist is in the range of 3-5 μm.

Claim 13

Dependent Claim 22 words

The process as recited in claim 8 wherein said the thickness of said thin photoresist layer is in the range 0.1-0.5 μm.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1990-05-11	1990-11-10	1991-05-12	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	1994-05-11	1994-11-10	1995-05-12	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	1998-05-11	1998-11-10	1999-05-12	$7700.00	Window Closed / Lapsed

Planarization process for organic filling of deep trenches

Abstract

Inventors

Bibliographic Details

Claims Analysis

References Cited (Backward Citations)

USPTO Annuity & Maintenance Windows

Assigned Categories & Tags

Assign Category Tag