US4284659A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulation layer reflow
Assignee: AT&T Inc
•
Filing: 1980-05-12
•
Granted: 1981-08-18
•
Expires: 2000-05-12
Abstract
Abstract This disclosure is directed to a method of forming an interlevel dielectric glass layer (16) on a semiconductor device, the layer having a plurality of feed-through apertures (17--17) therein. A CW laser beam (29) is continuously raster scanned over the surface of the glass layer (16) to reflow the layer to densify the material and form a smooth surface topography about the apertures (17--17).
Inventors
- 👤 Ralph J. Jaccodine
- 👤 Ami Kestenbaum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:29
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; Y; Y10; Y10S; Y10S148/00; Y10S148/133; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49204; Y10T29/49208; Y10T29/4921; Y10T29/49211; Y10T29/49213
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A method of forming an interlevel glass dielectric layer in a semiconductor device, comprising the steps of: depositing a layer of glass dielectric material on a partially completed semiconductor device; forming feed-through apertures in the glass dielectric material; and exposing the apertured glass dielectric layer to high energy laser radiation which is selectively coupled to said layer to reflow the layer to form a smooth surface topography around said apertures without substantially heating said partially completed semiconductor device.
Claim 2
Independent Claim
78 words
A method of forming an interlevel glass dielectric layer in a semiconductor device, comprising the steps of: depositing a layer of glass dielectric material on a partially completed semiconductor device; forming feed-through apertures in the glass dielectric material; and exposing the apertured glass dielectric layer to high energy laser radiation which is selectively coupled to said layer to reflow the layer to form a smooth surface topography around said apertures without substantially heating said partially completed semiconductor device.
Claim 3
Dependent Claim
28 words
The method as set forth in claim 1, wherein the exposing step is accomplished by: continuously scanning a laser beam over the surface of the apertured dielectric layer.
Claim 4
Independent Claim
19 words
The method as set forth in claims 1 or 2, wherein the dielectric layer is phosphorous doped silicate glass.
Claim 5
Dependent Claim
24 words
The method as set forth in claim 2, wherein: the laser scanning step is accomplished with a beam from a CW CO 2 laser.
Claim 6
Dependent Claim
19 words
The method as set forth in claim 3, wherein the glass depositing step is accomplished by chemical vapor deposition.
Claim 7
Dependent Claim
35 words
The method as set forth in claim 5, wherein: the step of continously scanning a laser beam simultaneously consolidates the vapor deposited dielectric glass layer and forms a smooth surface topography about said feed-through apertures.
Claim 8
Independent Claim
24 words
The method as set forth in claims 1 or 2, wherein substantially all of the high energy radiation is absorbed by the dielectric material.
Claim 9
Dependent Claim
35 words
The method as set forth in claim 6, which further comprises the step of: depositing a conductive material on the glass layer which electrically connects the surfaces of the semiconductor exposed through said feed-through apertures.
Claim 10
Independent Claim
83 words
A method of forming a glass dielectric layer in a semiconductor device, comprising the steps of: vapor depositing a layer of phosphorous doped silica glass on the surface of a semiconductor device; forming feed-through apertures in the glass layer; and raster scanning a high energy laser beam over the apertured glass layer to simultaneously densify the vapor deposited glass layer and form a smooth surface topography about said feed-through apertures without substantially heating and thereby altering the properties of said semiconductor device therebelow.
Claim 11
Independent Claim
83 words
A method of forming a glass dielectric layer in a semiconductor device, comprising the steps of: vapor depositing a layer of phosphorous doped silica glass on the surface of a semiconductor device; forming feed-through apertures in the glass layer; and raster scanning a high energy laser beam over the apertured glass layer to simultaneously densify the vapor deposited glass layer and form a smooth surface topography about said feed-through apertures without substantially heating and thereby altering the properties of said semiconductor device therebelow.
References Cited (Backward Citations)
US3585088A
Cited
US3825442A
Cited
US3911163A
Cited
US4030952A
Cited
US4039359A
Cited
US4159686A
Cited
US4122240A
Cited
SU649056A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-17 | 1985-02-16 | 1985-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-17 | 1989-02-16 | 1989-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-17 | 1993-02-16 | 1993-08-18 | $7700.00 | Window Closed / Lapsed |