Patent US4849959A successfully refreshed from Google Patents.
Patent US4284659A successfully refreshed from Google Patents.
US4284659A
Expired / Lapsed
US
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Insulation layer reflow
Assignee: AT&T Inc
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Filing: 1980-05-12
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Granted: 1981-08-18
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Expires: 2000-05-12
Abstract
Abstract This disclosure is directed to a method of forming an interlevel dielectric glass layer (16) on a semiconductor device, the layer having a plurality of feed-through apertures (17--17) therein. A CW laser beam (29) is continuously raster scanned over the surface of the glass layer (16) to reflow the layer to densify the material and form a smooth surface topography about the apertures (17--17).
Inventors
- 👤 Ralph J. Jaccodine
- 👤 Ami Kestenbaum
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:24
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; Y; Y10; Y10S; Y10S148/00; Y10S148/133; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49204; Y10T29/49208; Y10T29/4921; Y10T29/49211; Y10T29/49213
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
78 words
A method of forming an interlevel glass dielectric layer in a semiconductor device, comprising the steps of: depositing a layer of glass dielectric material on a partially completed semiconductor device; forming feed-through apertures in the glass dielectric material; and exposing the apertured glass dielectric layer to high energy laser radiation which is selectively coupled to said layer to reflow the layer to form a smooth surface topography around said apertures without substantially heating said partially completed semiconductor device.
Claim 2
Independent Claim
78 words
A method of forming an interlevel glass dielectric layer in a semiconductor device, comprising the steps of: depositing a layer of glass dielectric material on a partially completed semiconductor device; forming feed-through apertures in the glass dielectric material; and exposing the apertured glass dielectric layer to high energy laser radiation which is selectively coupled to said layer to reflow the layer to form a smooth surface topography around said apertures without substantially heating said partially completed semiconductor device.
Claim 3
Dependent Claim
28 words
The method as set forth in claim 1, wherein the exposing step is accomplished by: continuously scanning a laser beam over the surface of the apertured dielectric layer.
Claim 4
Independent Claim
19 words
The method as set forth in claims 1 or 2, wherein the dielectric layer is phosphorous doped silicate glass.
Claim 5
Dependent Claim
24 words
The method as set forth in claim 2, wherein: the laser scanning step is accomplished with a beam from a CW CO 2 laser.
Claim 6
Dependent Claim
19 words
The method as set forth in claim 3, wherein the glass depositing step is accomplished by chemical vapor deposition.
Claim 7
Dependent Claim
35 words
The method as set forth in claim 5, wherein: the step of continously scanning a laser beam simultaneously consolidates the vapor deposited dielectric glass layer and forms a smooth surface topography about said feed-through apertures.
Claim 8
Independent Claim
24 words
The method as set forth in claims 1 or 2, wherein substantially all of the high energy radiation is absorbed by the dielectric material.
Claim 9
Dependent Claim
35 words
The method as set forth in claim 6, which further comprises the step of: depositing a conductive material on the glass layer which electrically connects the surfaces of the semiconductor exposed through said feed-through apertures.
Claim 10
Independent Claim
83 words
A method of forming a glass dielectric layer in a semiconductor device, comprising the steps of: vapor depositing a layer of phosphorous doped silica glass on the surface of a semiconductor device; forming feed-through apertures in the glass layer; and raster scanning a high energy laser beam over the apertured glass layer to simultaneously densify the vapor deposited glass layer and form a smooth surface topography about said feed-through apertures without substantially heating and thereby altering the properties of said semiconductor device therebelow.
Claim 11
Independent Claim
83 words
A method of forming a glass dielectric layer in a semiconductor device, comprising the steps of: vapor depositing a layer of phosphorous doped silica glass on the surface of a semiconductor device; forming feed-through apertures in the glass layer; and raster scanning a high energy laser beam over the apertured glass layer to simultaneously densify the vapor deposited glass layer and form a smooth surface topography about said feed-through apertures without substantially heating and thereby altering the properties of said semiconductor device therebelow.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-08-17 | 1985-02-16 | 1985-08-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-08-17 | 1989-02-16 | 1989-08-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-08-17 | 1993-02-16 | 1993-08-18 | $7700.00 | Window Closed / Lapsed |