US4030952A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of MOS circuit fabrication
Assignee: Fairchild Semiconductor Corp
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Filing: 1975-10-06
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Granted: 1977-06-21
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Expires: 1995-10-06
Abstract
Abstract An improved method of MOS circuit fabrication includes the consecutive steps of formation of a selected material on the surface of an underlying substrate, removal of the selected material from selected portions of the underlying substrate, and formation of insulating material between the selected material and the underlying substrate on the surface of the newly exposed underlying substrate.
Inventors
- 👤 Robert L. Luce
- 👤 Joseph P. Perry
- 👤 James D. Sansburry
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/147
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
141 words
A method of fabricating a metal-oxide-semiconductor structure in a semiconductor substrate, said structure having source and drain regions separated by a gate region, comprising the steps of: forming a layer of selected dopant-containing material on surface portions of said semiconductor substrate overlying said source and drain regions to be formed with simultaneous diffusion of dopant from said material into said substrate, removing portions of said selected dopant-containing material over said source and drain regions, forming a first oxide insulation material on said semiconductor surface over said source and drain regions and beneath said dopant-containing material, and forming a second oxide insulation material over said dopant-containing material and over exposed portions of said first oxide insulation material whereby said first oxide insulation material, said dopant-containing material, and said second oxide insulation material cooperatively function as a protective layer for said metal-oxide-semiconductor structure.
Claim 2
Independent Claim
141 words
A method of fabricating a metal-oxide-semiconductor structure in a semiconductor substrate, said structure having source and drain regions separated by a gate region, comprising the steps of: forming a layer of selected dopant-containing material on surface portions of said semiconductor substrate overlying said source and drain regions to be formed with simultaneous diffusion of dopant from said material into said substrate, removing portions of said selected dopant-containing material over said source and drain regions, forming a first oxide insulation material on said semiconductor surface over said source and drain regions and beneath said dopant-containing material, and forming a second oxide insulation material over said dopant-containing material and over exposed portions of said first oxide insulation material whereby said first oxide insulation material, said dopant-containing material, and said second oxide insulation material cooperatively function as a protective layer for said metal-oxide-semiconductor structure.
Claim 3
Dependent Claim
22 words
A method as recited in claim 1 wherein said first oxide insulation material is formed by thermal oxidation of said semiconductor substrate.
Claim 4
Dependent Claim
56 words
A method as recited in claim 2 including before said step of forming a layer of selected dopant-containing material the steps of forming a layer of insulation material over said semiconductor substrate to produce field and gate insulation; and removing a portion of said gate insulation to expose the source and drain regions to be formed.
Claim 5
Dependent Claim
35 words
A method as recited in claim 3 and including removing portions of said first and second oxide insulation material over said source and drain regions and forming electrical connections with said source and drain regions.
Claim 6
Dependent Claim
15 words
A method as recited in claim 4 wherein said selected dopant-containing material includes boron oxide.
Claim 7
Dependent Claim
15 words
A method as recited in claim 5 wherein said semiconductor substrate material is monocrystalline silicon.
Claim 8
Dependent Claim
17 words
A method as recited in claim 6 wherein said field and gate insulation material is silicon dioxide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-06-20 | 1980-12-20 | 1981-06-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-06-20 | 1984-12-20 | 1985-06-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-06-20 | 1988-12-20 | 1989-06-21 | $7700.00 | Window Closed / Lapsed |