US5591676A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a semiconductor device having a low permittivity dielectric
Assignee: NXP USA Inc
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Filing: 1995-03-16
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Granted: 1997-01-07
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Expires: 2015-03-16
Abstract
Abstract A semiconductor device having electronic circuitry formed in a semiconductor substrate (11) and separated from an overlying metal interconnect layer (18,18') using a fluorinated polymer dielectric (14,14') . The fluorinated polymer layer (14,14') may be formed directly on metallic surfaces, or formed on a semiconductor or non-metallic surface using an adhesion promoter (13,13'). Once formed, the fluorinated polymer layer (14,14') can be patterned to provide vias, and covered with a patterned metal interconnect layer (18,18') .
Inventors
- 👤 Henry G. Hughes
- 👤 Ping-Chang Lue
- 👤 Frederick J. Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 16:09
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/01; H10W20/071; H10W20/072; H10W20/074; H10W20/075; H10W20/45; H10W20/46; H10W20/48
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
86 words
A method for making a semiconductor device comprising the steps of: providing a semiconductor substrate having electronic devices formed therein; forming a layer of fluorinated polymer on the substrate by applying a first fluorinated polymer layer, drying the first fluorinated polymer at a temperature less than 300° C. and applying an amorphous fluorinated polymer on top of the first fluorinated polymer layer; and sintering the substrate at a temperature in the range of 400°-500° C., such that crystallinity of said first fluorinated polymer layer is avoided.
Claim 2
Independent Claim
86 words
A method for making a semiconductor device comprising the steps of: providing a semiconductor substrate having electronic devices formed therein; forming a layer of fluorinated polymer on the substrate by applying a first fluorinated polymer layer, drying the first fluorinated polymer at a temperature less than 300° C. and applying an amorphous fluorinated polymer on top of the first fluorinated polymer layer; and sintering the substrate at a temperature in the range of 400°-500° C., such that crystallinity of said first fluorinated polymer layer is avoided.
Claim 3
Dependent Claim
60 words
The method of claim 1 further comprising a step of covering the substrate with an adhesion promoter before the step of forming a layer of fluorinated polymer, wherein the step of applying an adhesion promoter further comprises spin coating the substrate with a liquid solution comprising a material selected from the group consisting of metal halide, metal alkoxide, and vinyltrichlorisilane.
Claim 4
Dependent Claim
76 words
The method of claim 1 further comprising the steps of: covering the fluorinated polymer layer with a hard mask layer; covering the hard mask layer with a photoresist layer; patterning the photoresist layer to expose portions of the hard mask layer; etching the exposed portions of the hard mask layer to expose portions of the fluorinated polymer layer; and reactive ion etching the fluorinated polymer layer in an oxygen plasma to expose portions of the substrate.
Claim 5
Dependent Claim
31 words
The method of claim 3 further comprising the steps of: removing the photoresist layer; and depositing a metal layer on the fluorinated polymer layer after the step of reactive ion etching.
Claim 6
Dependent Claim
21 words
The method of claim 4 wherein the fluorinated polymer layer has a thickness in the range of three to five micrometers.
Claim 7
Dependent Claim
22 words
The method of claim 5 further comprising the step of removing the hard mask before the step of applying a metal layer.
Claim 8
Dependent Claim
32 words
The method of claim 4 wherein the step of covering the fluorinated polymer with a hard mask layer comprises depositing a glass using a low temperature plasma enhanced chemical vapor deposition process.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |