US5034801A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Intergrated circuit element having a planar, solvent-free dielectric layer
Assignee: W.L. Gore and Associates Inc
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Filing: 1989-07-31
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Granted: 1991-07-23
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Expires: 2009-07-31
Abstract
Abstract An integrated circuit element is provided, which may be an active or passive element, comprising a planar dielectric layer having a thickness 25 micrometers or less and a dielectric constant less than 3.4. The dielectric layer is preferably a fluoropolymer film coated or impregnated with a low ionic content resin. The preferred fluoropolymer is expanded polytetrafluoroethylene and the preferred resin component is a low ionic content polymer having a low dielectric constant, high thermal stability, and low thermal expansion, formed by addition polymerization. "Planarity" is defined as the ratio of the height of the dielectric at a point where there is no feature beneath the layer divided by the height of the dielectric over a feature, including the thickness of the feature. All products according to the invention have planarity exceeding 0.8.
Inventors
- 👤 Paul J. Fischer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W74/00; H10W74/10; H10W74/131; H10W74/147; H10W74/40; H10W74/47; H10W72/00; H10W72/071; H10W72/0711; H10W72/07141; Y; Y10; Y10T; Y10T428/00; Y10T428/31504; Y10T428/3154; Y10T428/31544
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
79 words
An integrated circuit element comprising a base wafer having an integrated circuit thereon, said circuit being covered by a dry planar, substantially solvent-free dielectric layer, wherein said dielectric layer comprises a porous plastic matrix layer containing within at least some of its pores a dielectric polymer, said dielectric layer having a thickness in the range of 5 to 25 micrometers, the planarity of said dielectric layer being at least 0.8, and wherein said matrix layer is porous, expanded polytetrafluoroethylene.
Claim 2
Dependent Claim
79 words
An integrated circuit element comprising a base wafer having an integrated circuit thereon, said circuit being covered by a dry planar, substantially solvent-free dielectric layer, wherein said dielectric layer comprises a porous plastic matrix layer containing within at least some of its pores a dielectric polymer, said dielectric layer having a thickness in the range of 5 to 25 micrometers, the planarity of said dielectric layer being at least 0.8, and wherein said matrix layer is porous, expanded polytetrafluoroethylene.
Claim 3
Dependent Claim
16 words
The element of claim 1 wherein said dielectric layer has a dielectric constant less than 3.4.
Claim 4
Dependent Claim
16 words
The element of claim 2 wherein said dielectric layer has a dielectric constant less than 2.7.
Claim 5
Dependent Claim
23 words
The element of claim 1 wherein said dielectric polymer is contained within substantially all of the pores of said porous plastic matrix layer.
Claim 6
Dependent Claim
27 words
The element of claim 1 wherein said dielectric polymer is formed as a coating on said porous plastic matrix layer, said coating being adjacent said electric circuit.
Claim 7
Dependent Claim
25 words
The element of claim 1 wherein the volume of said dielectric polymer exceeds the void volume of the pores of said porous plastic matrix layer.
Claim 8
Dependent Claim
18 words
A multiple layer integrated circuit comprising a plurality of integrated circuit elements according to claim 1 bonded together.
Claim 9
Dependent Claim
23 words
The element of claim 1 wherein said dielectric layer has a thickness less than 12.5 micrometers and a dielectric constant less than 2.7.
Claim 10
Dependent Claim
11 words
The element of claim 1 wherein said base wafer is silicon.
Claim 11
Dependent Claim
12 words
The element of claim 1 wherein said base wafer is gallium arsenide.
Claim 12
Dependent Claim
11 words
The element of claim 1 wherein said base wafer is ceramic.
Claim 13
Dependent Claim
15 words
The element of claim 1 wherein the base wafer is a multilayer inorganic composite layer.
Claim 14
Dependent Claim
13 words
The element of claim 1 wherein said dielectric polymer is a thermosetting polymer.
Claim 15
Dependent Claim
16 words
The element of claim 1 wherein said dielectric polymer is a low ionic content thermosetting polymer.
Claim 16
Dependent Claim
15 words
The element of claim 2 wherein said dielectric layer has a dielectric constant of 2.7.
Claim 17
Dependent Claim
12 words
The element of claim 1 wherein said dielectric polymer is a thermoplastic.
Claim 18
Dependent Claim
12 words
The element of claim 16 wherein said thermoplastic is a preimidized polyimide.
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