Semiconductor device

Abstract

Abstract PURPOSE:To prevent the occurrence of the difference in level by wiring and to try the improvement of heat resistance and adhesiveness by placing a separate high molecular resin layer over a isocyanuric acid ester polymer film wherein an insulating film between layers is formed. CONSTITUTION:Triaryl isocyanate with good heat resistance and adhesiveness is applied on Al wiring and an insulating film is made by polymerization hardening. Next, a polyimide resin film is placed on the insulating film and polymerization hardening is done by heating and the unevenness caused by perforated holes of a electrode leader section or the like is flatted. With spatter etching consecutively done by using a Cr mask, a window will be opened at a predetermined part on the Al wiring. Al wiring on the upper layer is formed by eliminating the Cr mask. Adhesiveness of the insulating film between layers by this composition will endure all kinds of heat treatment during a process and the adhesiveness is practically sufficient and the deterioration in insulation will not exist.

Inventors

• 👤 Moritaka Nakamura

Bibliographic Details