US5563428A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Layered structure of a substrate, a dielectric layer and a single crystal layer
Assignee: GlobalFoundries Inc
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Filing: 1995-01-30
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Granted: 1996-10-08
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Expires: 2015-01-30
Abstract
Abstract A structure is fabricated comprising a substrate, a dielectric layer formed over the substrate, and a single crystal layer of a compound formed over the dielectric layer. The single crystal layer is formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on the dielectric layer having an initial thickness of about 100 to about 10,000 angstroms. According to another aspect, a carbide single crystal layer is provided on a substrate by depositing carbon from a solid carbon source at a low rate and low temperature, followed by reacting the carbon with the underlying layer to convert it to the carbide.
Inventors
- 👤 Bruce A. Ek
- 👤 Stephen M. Gates
- 👤 Fernando J. Guarin
- 👤 Subramanian S. Iyer
- 👤 Adrian R. Powell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:22
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10F; H10F71/00; H10F71/121; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
89 words
A layered structure comprising: a substrate, a dielectric layer formed over said substrate, a single crystal layer of a compound formed over said dielectric layer, wherein said single crystal layer has a thickness of about 200 to about 20,000 angstroms, said single crystal layer formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on said dielectric layer having an initial thickness of about 100 to about 10,000 angstroms to form said single crystal layer of a compound.
Claim 2
Dependent Claim
89 words
A layered structure comprising: a substrate, a dielectric layer formed over said substrate, a single crystal layer of a compound formed over said dielectric layer, wherein said single crystal layer has a thickness of about 200 to about 20,000 angstroms, said single crystal layer formed by the chemical reaction of at least a first element with an initial single crystal layer of a second element on said dielectric layer having an initial thickness of about 100 to about 10,000 angstroms to form said single crystal layer of a compound.
Claim 3
Dependent Claim
23 words
The layered structure of claim 1 wherein said dielectric layer is selected from the group consisting of silicon dioxide, silicon oxynitride and borosilicate.
Claim 4
Dependent Claim
23 words
The layered structure of claim 1 wherein said first element is selected from the group consisting of carbon, germanium, cobalt, titanium and tungsten.
Claim 5
Dependent Claim
12 words
The layered structure of claim 1 wherein said second element is silicon.
Claim 6
Dependent Claim
12 words
The layered structure of claim 1 wherein said compound is silicon carbide.
Claim 7
Dependent Claim
18 words
The layered structure of claim 1 which further comprises a semiconductor layer located over said single crystal layer.
Claim 8
Dependent Claim
29 words
The layered structure of claim 6 wherein said semiconductor is lattice matched to said compound and is selected from the group consisting of SiC, SiGe, SiGeC, A1N and GaN.
Claim 9
Dependent Claim
28 words
The layered structure of claim 1 wherein said semiconductor is GaN and which further comprises a C-AIN layer located intermediate said semiconductor layer and said single crystal layer.
Claim 10
Dependent Claim
17 words
The layered structure of claim 1 wherein said substrate is at least a four inch diameter substrate.
Claim 11
Dependent Claim
19 words
The layered structure of claim 1 wherein said single crystal layer is about 200 to about 1,000 angstroms thick.
Claim 12
Dependent Claim
19 words
The layered structure of claim 1 wherein said single crystal layer is about 200 to about 300 angstroms thick.
Claim 13
Dependent Claim
18 words
The layered structure of claim 1 wherein said dielectric layer is about 1,000 to about 20,000 angstroms thick.
Claim 14
Dependent Claim
18 words
The layered structure of claim 1 wherein said dielectric layer is about 1,000 to about 5,000 angstroms thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-10-08 | 2000-04-08 | 2000-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-10-08 | 2004-04-08 | 2004-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-10-08 | 2008-04-08 | 2008-10-08 | $7700.00 | Window Closed / Lapsed |