Process for bonding a semiconductor die to a variable die size inner lead layout

Claim 1

A method of forming a semiconductor device assembly, comprising the steps of: forming a substrate by forming a single non-conductive support layer having a front face and a back face, and a conductive layer comprised of a plurality of "n" conductive leads having inward and outward lead ends, the conductive layer disposed on the front face of the support layer, the conductive layer having a front face and a back face, the back face of the conductive layer proximate to the front face of the support layer, the conductive leads arranged in a generally radial pattern about a central point on the support layer with the inward ends closest to the central point, each of the conductive leads having a width "w" and spaced a distance "d" from one another at their inward ends, the conductive lead inward ends forming a generally square opening having a side dimension "s" and an area "s 2 "; attaching a semiconductor die to the front face of the non-conductive support layer with an electrically non-conductive adhesive, the die having a front circuit-containing face and a back face, the back face of the die being attached to the front face of the non-conductive support layer through the generally square opening formed by the inward ends of the conductive leads, the die having an area larger than the area "s 2 " of the generally square opening, the die being disposed atop and over the generally square opening and the inward ends and part of the conductive leads, wherein the die may be of different areas without having to change the area "s 2 " of the generally square opening; and connecting the front circuit containing face of the die to the conductive leads with bond wires.

Claim 2

A method of forming a semiconductor device assembly, comprising the steps of: forming a substrate by forming a single non-conductive support layer having a front face and a back face, and a conductive layer comprised of a plurality of "n" conductive leads having inward and outward lead ends, the conductive layer disposed on the front face of the support layer, the conductive layer having a front face and a back face, the back face of the conductive layer proximate to the front face of the support layer, the conductive leads arranged in a generally radial pattern about a central point on the support layer with the inward ends closest to the central point, each of the conductive leads having a width "w" and spaced a distance "d" from one another at their inward ends, the conductive lead inward ends forming a generally square opening having a side dimension "s" and an area "s 2 "; attaching a semiconductor die to the front face of the non-conductive support layer with an electrically non-conductive adhesive, the die having a front circuit-containing face and a back face, the back face of the die being attached to the front face of the non-conductive support layer through the generally square opening formed by the inward ends of the conductive leads, the die having an area larger than the area "s 2 " of the generally square opening, the die being disposed atop and over the generally square opening and the inward ends and part of the conductive leads, wherein the die may be of different areas without having to change the area "s 2 " of the generally square opening; and connecting the front circuit containing face of the die to the conductive leads with bond wires.