Abstract A process, compatible with bipolar and CMOS processes, for making local interconnection of adjacent devices on a semiconductor substrate is disclosed. An electrically insulating etch stop layer is deposited over the semiconductor substrate including the device contact openings. A conductive layer is deposited over the etch stop layer. The conductive layer is patterned into a local interconnect by use of resist patterning and subtractive etching, stopping on the etch stop layer. By thermal activation, the conductive pattern and the underlying insulating material interact to become a single electrically conductive layer. This layer also establishes electrical contact to the devices thus completing the formation of the local interconnection of the devices on a semiconductor substrate.
A method of manufacturing a local interconnection of devices on a semiconductor substrate, comprising: providing a semiconductor substrate containing a plurality of devices and having a surface with contact openings to said devices; providing an etch stop layer of silicon dioxide over said surface including said contact openings to said devices; depositing a layer of conductor over said insulating layer; patterning resist over said conductor layer; defining said conductor layer through subtractive etching stopping on said etch stop layer; and, thermally activating said defined conductor and the underlying etch stop layer thereby altering said underlying etch stop layer from insulating to conducting.
Claim 2
Independent Claim
102 words
A method of manufacturing a local interconnection of devices on a semiconductor substrate, comprising: providing a semiconductor substrate containing a plurality of devices and having a surface with contact openings to said devices; providing an etch stop layer of silicon dioxide over said surface including said contact openings to said devices; depositing a layer of conductor over said insulating layer; patterning resist over said conductor layer; defining said conductor layer through subtractive etching stopping on said etch stop layer; and, thermally activating said defined conductor and the underlying etch stop layer thereby altering said underlying etch stop layer from insulating to conducting.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said silicon dioxide is selected in the thickness range of 50 to 200 angstroms.
Claim 4
Dependent Claim
11 words
The method of claim 1, wherein said conductor film comprises Ti.
Claim 5
Dependent Claim
22 words
The method of claim 1, wherein said thermal activation is achieved by one of rapid thermal annealing, isothermal heating and laser heating.
Claim 6
Dependent Claim
17 words
The method of claim 1, where said subtractive etching is done in a plasma discharge containing chlorine.