US5180688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming tunneling diffusion barrier for local interconnect and polysilicon high impedance device
Assignee: STMicroelectronics lnc USA
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Filing: 1991-08-06
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Granted: 1993-01-19
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Expires: 2011-08-06
Abstract
Abstract A semiconductor device is described in which a conductive layer overlaps a dielectric layer forming a composite electrical device deposited over selected portions of a semiconductor substrate chemically isolating the conductive layer portion of the composite electrical device from the substrate, thereby preventing diffusion of dopant material through the dielectric layer into and out of the conductive layer while simultaneously allowing for tunneling of electrons through the dielectric layer to and from the conductive layer and the semiconductor substrate.
Inventors
- 👤 Frank R. Bryant
- 👤 John L. Waters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/01; H10W20/031; H10W20/0698; H10W20/41; H10W20/44; H10W20/4451
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
128 words
A method of forming an interconnect of an integrated circuit, comprising the steps of: forming a first silicon layer having a first conductivity type; forming an insulating layer over the first silicon layer with an opening to expose selected regions in the first silicon layer; forming a barrier insulating layer covering exposed regions in the first silicon layer and portions of the insulating layer, wherein the barrier insulating layer has a thickness sufficient to facilitate tunneling of electrons through the barrier layer, and wherein the barrier layer thickness is between approximately 5 and 50 angstroms to prevent the diffusion of dopant material between the first silicon layer and the second polysilicon layer; and, forming a second polysilicon layer having a second conductivity type over the barrier insulating layer.
Claim 2
Independent Claim
128 words
A method of forming an interconnect of an integrated circuit, comprising the steps of: forming a first silicon layer having a first conductivity type; forming an insulating layer over the first silicon layer with an opening to expose selected regions in the first silicon layer; forming a barrier insulating layer covering exposed regions in the first silicon layer and portions of the insulating layer, wherein the barrier insulating layer has a thickness sufficient to facilitate tunneling of electrons through the barrier layer, and wherein the barrier layer thickness is between approximately 5 and 50 angstroms to prevent the diffusion of dopant material between the first silicon layer and the second polysilicon layer; and, forming a second polysilicon layer having a second conductivity type over the barrier insulating layer.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein the first silicon layer is a substrate.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein the barrier layer comprises silicon nitride.
Claim 5
Dependent Claim
19 words
The method of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.
Claim 6
Dependent Claim
19 words
The method of claim 1, wherein the first conductivity type is p-type and the second conductivity type is n-type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-19 | 1996-07-20 | 1997-01-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-19 | 2000-07-20 | 2001-01-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-19 | 2004-07-20 | 2005-01-19 | $7700.00 | Window Closed / Lapsed |