Low resistance Schottky diode on polysilicon/metal-silicide

Claim 1

An integrated Schottky diode structure comprising: a first dielectric layer of electrically insulating material; a metal silicide layer disposed on the dielectric layer; a polycrystalline silicon layer disposed on the metal silicide layer, a lower portion of the polycrystalline silicon layer being doped with N conductivity type impurity to provide an ohmic connection to the metal silicide layer; a monocrystalline silicon layer disposed on the polycrystalline silicon layer, an upper portion of the monocrystalline silicon being doped with N conductivity type material to a lower concentration than the underlying polycrystalline silicon layer, at least one selected region of the monocrystalline silicon layer being doped with more N conductivity type impurity than the surrounding monocrystalline silicon layer; a second dielectric layer of electrically insulating material disposed on the monocrystalline silicon layer, the second dielectric layer having a plurality of openings therein, each of said openings extending through the electrically insulating material to expose underlying monocrystalline silicon, at least one of the openings being aligned with the at least one selected region of the monocrystalline silicon layer having more N conductivity type impurity; and a plurality of metal connections to the monocrystalline silicon ohmically isolated from each other and positioned in the openings in the second dialectric layer to form anodes of the integrated diode structure, with the metal silicide layer forming a common cathode for all of the anodes.