Patent US5464790A successfully refreshed from Google Patents.
US5464790A
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Method of fabricating an antifuse element having an etch-stop dielectric layer
Assignee: Microsemi SoC Corp
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Filing: 1994-07-28
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Granted: 1995-11-07
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Expires: 2014-07-28
Abstract
Abstract A dielectric layer through which an antifuse via or an antifuse contact via is to be formed comprises a sandwich of at least two, and preferably three, individual layers. A first etch-stop dielectric layer is disposed over an underlying layer comprising either a lower or upper antifuse electrode barrier layer or an antifuse material layer. The first etch-stop dielectric layer comprises a thin layer of dielectric material. An isolation dielectric layer is disposed over the first etch-stop dielectric layer and comprises a second material comprising most of the thickness of the sandwich and having a substantial etch-time differential from the first etch-stop dielectric material for a selected etchant for the first etch-stop dielectric material. A second etch-stop dielectric layer may be provided under the first etch-stop dielectric layer and may be formed from a third material having a substantial etch time differential from the first etch-stop dielectric material for a selected etchant for the first material. A process for forming a via according to the present invention comprises, in order, the steps of forming the first etch-stop, isolation, masking the sandwich of dielectric layers for formation of a via; etching the isolation dielectric layer with an over-etch, stopping on the underlying first etch-stop dielectric layer; etching the first etch-stop dielectric layer with high over-etch, stopping on the layer beneath it.
Inventors
- 👤 Frank W. Hawley
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; H10W20/01; H10W20/031; H10W20/064; H10W20/065
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
126 words
A process for fabricating an antifuse via comprising the steps of: forming a first etch-stop dielectric layer from a first dielectric material over an underlying layer; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; and etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said underlying layer, performing an over-etch process of from about 30-70% using said underlying layer as an etch stop.
Claim 2
Dependent Claim
126 words
A process for fabricating an antifuse via comprising the steps of: forming a first etch-stop dielectric layer from a first dielectric material over an underlying layer; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; and etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said underlying layer, performing an over-etch process of from about 30-70% using said underlying layer as an etch stop.
Claim 3
Dependent Claim
188 words
A process for fabricating an antifuse via comprising the steps of: forming a second etch-stop dielectric layer from a first dielectric material over an underlying layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said third and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said first dielectric material, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; and etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said underlying layer, performing an over-etch process of from about 30-70% using said underlying layer as an etch stop.
Claim 4
Dependent Claim
188 words
A process for fabricating an antifuse via comprising the steps of: forming a second etch-stop dielectric layer from a first dielectric material over an underlying layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said third and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said first dielectric material, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; and etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said underlying layer, performing an over-etch process of from about 30-70% using said underlying layer as an etch stop.
Claim 5
Dependent Claim
173 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming a first etch-stop dielectric layer from a first dielectric material over said lower barrier layer; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said lower barrier layer, performing an over-etch process of from about 30-70% using said lower barrier layer as an etch stop; forming an antifuse material layer in said antifuse via; forming an upper barrier layer over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 6
Dependent Claim
173 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming a first etch-stop dielectric layer from a first dielectric material over said lower barrier layer; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said lower barrier layer, performing an over-etch process of from about 30-70% using said lower barrier layer as an etch stop; forming an antifuse material layer in said antifuse via; forming an upper barrier layer over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 7
Dependent Claim
232 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming a second etch-stop dielectric layer from a first dielectric material over said lower barrier layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said lower barrier layer, performing an over-etch process of from about 30-70% using said lower barrier layer as an etch stop; forming an antifuse material laver in said antifuse via; forming an upper barrier layer over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 8
Dependent Claim
232 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming a second etch-stop dielectric layer from a first dielectric material over said lower barrier layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said lower barrier layer, performing an over-etch process of from about 30-70% using said lower barrier layer as an etch stop; forming an antifuse material laver in said antifuse via; forming an upper barrier layer over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 9
Dependent Claim
178 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming a first etch-stop dielectric layer from a first dielectric material over said antifuse material layer; forming an isolation dielectric layer from, a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said antifuse material layer, performing an over-etch process of from about 30-70% using said antifuse material layer as an etch stop; forming an upper barrier layer in said antifuse via over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 10
Dependent Claim
178 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming a first etch-stop dielectric layer from a first dielectric material over said antifuse material layer; forming an isolation dielectric layer from, a second dielectric material over said first etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said antifuse material layer, performing an over-etch process of from about 30-70% using said antifuse material layer as an etch stop; forming an upper barrier layer in said antifuse via over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 11
Dependent Claim
237 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming a second etch-stop dielectric layer from a first dielectric material over said antifuse material layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said second etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said antifuse material layer, performing an over-etch process of from about 30-70% using said antifuse material layer as an etch stop; forming an upper barrier layer in said antifuse via over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 12
Dependent Claim
237 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming a second etch-stop dielectric layer from a first dielectric material over said antifuse material layer; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said second etch-stop dielectric layer; etching an antifuse via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said antifuse via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop dielectric layer as an etch stop; etching said antifuse via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said antifuse material layer, performing an over-etch process of from about 30-70% using said antifuse material layer as an etch stop; forming an upper barrier layer in said antifuse via over said antifuse material layer; and forming an upper antifuse electrode over said upper barrier layer.
Claim 13
Dependent Claim
168 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming an upper antifuse electrode from a barrier material over said antifuse material layer; forming a first etch-stop dielectric layer from a first dielectric material over said upper antifuse electrode; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching a contact via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; and etching said contact via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said upper antifuse electrode, performing an over-etch process of from about 30-70 using said upper antifuse electrode as an etch stop.
Claim 14
Dependent Claim
168 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming an upper antifuse electrode from a barrier material over said antifuse material layer; forming a first etch-stop dielectric layer from a first dielectric material over said upper antifuse electrode; forming an isolation dielectric layer from a second dielectric material over said first etch-stop dielectric layer; etching a contact via through said isolation dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said first etch-stop dielectric layer as an etch stop; and etching said contact via through said first etch-stop dielectric layer with an etching process having a selectivity between said second dielectric material and said upper antifuse electrode, performing an over-etch process of from about 30-70 using said upper antifuse electrode as an etch stop.
Claim 15
Dependent Claim
24 words
The process of claim 7, further including the step of forming a metal interconnect layer in said contact via over said upper antifuse electrode.
Claim 16
Dependent Claim
225 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming an upper antifuse electrode from a barrier material over said antifuse material layer; forming a second etch-stop dielectric layer from a first dielectric material over said upper antifuse electrode; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching a contact via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said contact via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop layer as an etch stop; and etching said contact via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said upper antifuse electrode, performing an over-etch process of from about 30-70% using said upper antifuse electrode as an etch stop.
Claim 17
Dependent Claim
225 words
A process for fabricating an antifuse structure, including the steps of: forming a lower antifuse electrode; forming a lower barrier layer over said lower antifuse electrode; forming an antifuse material layer over said lower barrier layer; forming an upper antifuse electrode from a barrier material over said antifuse material layer; forming a second etch-stop dielectric layer from a first dielectric material over said upper antifuse electrode; forming a first etch-stop dielectric layer from a second dielectric material over said second etch-stop dielectric layer; forming an isolation dielectric layer from a third dielectric material over said first etch-stop dielectric layer; etching a contact via through said isolation dielectric layer with an etching process having a selectivity between said second and third dielectric materials, performing an over-etch process from about 30-70% using said first etch-stop dielectric layer as an etch stop; etching said contact via through said first etch-stop dielectric layer with an etching process having a selectivity between said first and second dielectric materials, performing an over-etch process of from about 30-70% using said second etch-stop layer as an etch stop; and etching said contact via through said second etch-stop dielectric layer with an etching process having a selectivity between said first dielectric material and said upper antifuse electrode, performing an over-etch process of from about 30-70% using said upper antifuse electrode as an etch stop.
Claim 18
Dependent Claim
23 words
The process of claim 9, further including the step of forming a metal interconnect layer in said via over said upper antifuse electrode.
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