Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride

Claim 2

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a nucleus containing free electrons on said surface (B).

Claim 3

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a thin film containing free electrons on said surface (B).

Claim 4

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a thin film containing free electrons on said surface (B).

Claim 5

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification is carried out by elevating the temperature of said electron non-donative surface (B) higher than the temperature during said selective deposition of aluminum film.

Claim 6

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification is carried out by elevating the temperature of said electron non-donative surface (B) higher than the temperature during said selective deposition of aluminum film.

Claim 7

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating a light having greater energy than the optical forbidden gap width of the material constituting said surface (B).

Claim 8

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating a light having greater energy than the optical forbidden gap width of the material constituting said surface (B).

Claim 9

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with ions.

Claim 10

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with ions.

Claim 11

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with an electron beam.

Claim 12

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said surface (B) and on said selectively formed aluminum film or the metal film composed mainly of aluminum employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with an electron beam.

Claim 13

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a nucleus containing free electrons on said surface (B).

Claim 14

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a nucleus containing free electrons on said surface (B).

Claim 15

A deposited film formation method, comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a thin film containing free electrons on said surface (B).

Claim 16

A deposited film formation method, comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein the surface modification of step (d) is performed by forming a thin film containing free electrons on said surface (B).

Claim 17

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification is carried out by elevating the temperature of said electron non-donative surface (B) higher than the temperature during said selective deposition of aluminum film containing silicon.

Claim 18

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification is carried out by elevating the temperature of said electron non-donative surface (B) higher than the temperature during said selective deposition of aluminum film containing silicon.

Claim 19

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating a light having greater energy than the optical forbidden gap width of the material constituting said surface (B).

Claim 20

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating a light having greater energy than the optical forbidden gap width of the material constituting said surface (B).

Claim 21

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with ions.

Claim 22

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step of irradiating said surface (B) with ions.

Claim 23

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step irradiating said surface (B) with an electron beam.

Claim 24

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum containing silicon on said electron donative surface (A), and (d) modifying the surface of said electron non-donative surface (B), and forming an aluminum film or a metal film composed mainly of aluminum on said modified surface (B) employing a gas of an alkyl aluminum hydride, wherein said surface modification includes the step irradiating said surface (B) with an electron beam.

Claim 25

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation in a deposited film formation device equipped with a plasma generation means for generating a plasma, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), (d) modifying the surface of said electron non-donative surface (B) by generating a plasma in said device while introducing said gas of alkyl aluminum hydride and hydrogen gas, and (e) forming an aluminum film or a metal film composed mainly of aluminum on said selectively formed aluminum film or metal film composed mainly of aluminum and on said modified electron non-donative surface (B).

Claim 26

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation in a deposited film formation device equipped with a plasma generation means for generating a plasma, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or a metal film composed mainly of aluminum on said electron donative surface (A), (d) modifying the surface of said electron non-donative surface (B) by generating a plasma in said device while introducing said gas of alkyl aluminum hydride and hydrogen gas, and (e) forming an aluminum film or a metal film composed mainly of aluminum on said selectively formed aluminum film or metal film composed mainly of aluminum and on said modified electron non-donative surface (B).

Claim 27

A deposited film formation method according to claim 13, wherein no plasma is generated during the selective formation step of said aluminum film.

Claim 28

A deposited film formation method according to claim 13, wherein a plasma is generated with a low power which does not deposit aluminum on said electron non-donative surface (B) during the selective formation step of said aluminum film.

Claim 29

A deposited film formation method according to claim 13, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 30

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation in a deposited film formation device equipped with a plasma generation means for generating a plasma, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atom and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or metal film composed mainly of aluminum containing silicon on said electron donative surface (A), (d) modifying the surface of said electron non-donative surface (B) by generating a plasma in said device while introducing said gas of alkyl aluminum hydride, gas containing silicon atoms and hydrogen gas, and (e) forming an aluminum film or metal film composed mainly of aluminum containing silicon (i) on said selectively formed aluminum film or metal film composed mainly of aluminum containing silicon and (ii) on said modified electron non-donative surface (B).

Claim 31

A deposited film formation method comprising the steps of: (a) arranging a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for deposited film formation in a deposited film formation device equipped with a plasma generation means for generating a plasma, (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atom and hydrogen gas into said space for deposited film formation, (c) maintaining the temperature of said electron donative surface (A) within the range of the decomposition temperature of said alkyl aluminum hydride to 450° C., thereby forming selectively an aluminum film or metal film composed mainly of aluminum containing silicon on said electron donative surface (A), (d) modifying the surface of said electron non-donative surface (B) by generating a plasma in said device while introducing said gas of alkyl aluminum hydride, gas containing silicon atoms and hydrogen gas, and (e) forming an aluminum film or metal film composed mainly of aluminum containing silicon (i) on said selectively formed aluminum film or metal film composed mainly of aluminum containing silicon and (ii) on said modified electron non-donative surface (B).

Claim 32

A deposited film formation method according to claim 17, wherein no plasma is generated during the selective formation step of said aluminum film.

Claim 33

A deposited film formation method according to claim 17, wherein a plasma is generated with a low power which does not deposit aluminum on said electron non-donative surface (B) during the selective formation of aluminum film on said electron donative surface.

Claim 34

A deposited film formation method according to claim 17, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.

Claim 35

A deposited film formation method according to claim 13 or 17, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.