US5179042A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming deposited film by use of alkyl aluminum hydride
Assignee: Canon Inc
•
Filing: 1990-09-07
•
Granted: 1993-01-12
•
Expires: 2010-09-07
Abstract
Abstract A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of A1.
Inventors
- 👤 Nobuo Mikoshiba
- 👤 Kazuo Tsubouchi
- 👤 Kazuya Masu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 06:00
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; C; C23; C23C; C23C16/00; C23C16/06; C23C16/18; C23C16/20; Y; Y10; Y10S; Y10S438/00; Y10S438/937
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
89 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) in a space for formation of the deposited film, (b) introducing a gas of the an alkyl aluminum hydride and hydrogen gas into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum film on said electron donative surface (A).
Claim 2
Dependent Claim
89 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) in a space for formation of the deposited film, (b) introducing a gas of the an alkyl aluminum hydride and hydrogen gas into said space for formation of deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum film on said electron donative surface (A).
Claim 3
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 4
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 5
Dependent Claim
23 words
The process according to claim 1, wherein said substrate is formed of a material selected from monocrystalline silicon, polycrystalline silicon and amorphous silicon.
Claim 6
Dependent Claim
38 words
The process according to claim 1, wherein said substrate is a III-V compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table.
Claim 7
Dependent Claim
38 words
The process according to claim 1, wherein said substrate is a II-VI compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table.
Claim 8
Dependent Claim
26 words
The process according to claim 1, wherein said substrate is a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper.
Claim 9
Dependent Claim
12 words
The process according to claim 1, wherein said substrate is a metal.
Claim 10
Dependent Claim
12 words
The process according to claim 1, wherein said substrate is a semiconductor.
Claim 11
Dependent Claim
11 words
The process according to claim 1, wherein said substrate is silicide.
Claim 12
Dependent Claim
12 words
The process according to claim 1, wherein said aluminum film is monocrystalline.
Claim 13
Dependent Claim
96 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum film selectively on said electron donative surface (A).
Claim 14
Dependent Claim
96 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film, (b) introducing a gas of an alkyl aluminum hydride and hydrogen gas into said space for formation of the deposited film, and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form an aluminum film selectively on said electron donative surface (A).
Claim 15
Dependent Claim
15 words
The process according to claim 12, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 16
Dependent Claim
15 words
The process according to claim 12, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 17
Dependent Claim
38 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a material selected from monocrystalline silicon, polycrystalline silicon and amorphous silicon, and said electron non-donative surface (B) is formed of an insulating material.
Claim 18
Dependent Claim
56 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a III-V group compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 19
Dependent Claim
56 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a II-VI group compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 20
Dependent Claim
43 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper, and said electron non-donative surface (B) is formed of an insulating material.
Claim 21
Dependent Claim
29 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a metal and said electron non-donative surface (B) is formed of an insulating material.
Claim 22
Dependent Claim
29 words
The process according to claim 12, wherein said electron donative surface (A) is formed of a semiconductor and said electron non-donative surface (B) is formed of an insulating material.
Claim 23
Dependent Claim
28 words
The process according to claim 12, wherein said electron donative surface (A) is formed of silicide and said electron non-donative surface (B) is formed of an insulating material.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-01-12 | 1996-07-13 | 1997-01-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-01-12 | 2000-07-13 | 2001-01-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-01-12 | 2004-07-13 | 2005-01-12 | $7700.00 | Window Closed / Lapsed |