US5134092A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for forming deposited film and process for producing semiconductor device
Assignee: Canon Inc
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Filing: 1990-09-25
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Granted: 1992-07-28
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Expires: 2010-09-25
Abstract
Abstract A process for forming a deposited film comprises the steps of; (a) disposing in a space for forming a deposited film a substrate having an electron donative surface; (b) introducing to the space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) forming a tungsten film on the electron donative surface.
Inventors
- 👤 Shigeyuki Matsumoto
- 👤 Osamu Ikeda
- 👤 Kazuaki Ohmi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
79 words
A process for forming a deposited film, comprising the steps of: (a) disposing in a space for forming a deposited film a substrate having an electron donative surface; (b) introducing to said space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) forming a tungsten film on said electron donative surface by reacting said organic metal compound containing a tungsten atom said hydrogen gas.
Claim 2
Dependent Claim
79 words
A process for forming a deposited film, comprising the steps of: (a) disposing in a space for forming a deposited film a substrate having an electron donative surface; (b) introducing to said space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) forming a tungsten film on said electron donative surface by reacting said organic metal compound containing a tungsten atom said hydrogen gas.
Claim 3
Dependent Claim
26 words
A process for forming a deposited film according to claim 1, wherein said organic metal compound containing a tungsten atom is W(CH 3 ) 6 .
Claim 4
Dependent Claim
19 words
A process for forming a deposited film according to claim 1, wherein said electron donative surface comprises a semiconductor.
Claim 5
Dependent Claim
88 words
A process for forming a deposited film comprising the steps of: (a) disposing in space for forming a deposited film a substrate having an electron donative surface (A) and an electron non-donative surface (B); (b) introducing to said space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) selectively forming a tungsten film on said electron donative surface (A) by reacting said organic metal compound containing a tungsten atom with said hydrogen gas.
Claim 6
Dependent Claim
88 words
A process for forming a deposited film comprising the steps of: (a) disposing in space for forming a deposited film a substrate having an electron donative surface (A) and an electron non-donative surface (B); (b) introducing to said space for forming a deposited film i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas; and (c) selectively forming a tungsten film on said electron donative surface (A) by reacting said organic metal compound containing a tungsten atom with said hydrogen gas.
Claim 7
Dependent Claim
26 words
A process for forming a deposited film according to claim 4, wherein said organic metal compound containing a tungsten atom is W(CH 3 ) 6 .
Claim 8
Dependent Claim
20 words
A process for forming a deposited film according to claim 4, wherein said electron donative surface (A) comprises a semiconductor.
Claim 9
Dependent Claim
20 words
A process for forming a deposited film according to claim 4, wherein said electron non-donative surface (B) comprises an insulator.
Claim 10
Dependent Claim
91 words
A process for producing a semiconductor device, comprising the steps of: (a) forming on a semiconductor material a film comprising an insulating material; (b) forming a hole in said film so that said semiconductor material is uncovered; and (c) filling up said hole with a conductive material to form part of an electrical wiring; wherein tungsten is selectively deposited in said hole by the reaction between i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas to form said part of an electrical wiring.
Claim 11
Dependent Claim
91 words
A process for producing a semiconductor device, comprising the steps of: (a) forming on a semiconductor material a film comprising an insulating material; (b) forming a hole in said film so that said semiconductor material is uncovered; and (c) filling up said hole with a conductive material to form part of an electrical wiring; wherein tungsten is selectively deposited in said hole by the reaction between i) a gas comprising an organic metal compound containing a tungsten atom and ii) a hydrogen gas to form said part of an electrical wiring.
Claim 12
Dependent Claim
26 words
A process for producing a semiconductor device according to claim 8, wherein said organic metal compound containing a tungsten atom is W(CH 3 ) 6 .
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-07-28 | 1996-01-27 | 1996-07-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-28 | 2000-01-27 | 2000-07-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-28 | 2004-01-27 | 2004-07-28 | $7700.00 | Window Closed / Lapsed |