Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride

Claim 2

A process for forming a metal film comprising the steps of: (i) providing a substrate comprising a semiconductor or a conductor portion and an insulator portion; (ii) disposing said substrate in a first film-forming chamber of a metal film-forming apparatus, said film-forming apparatus comprising said first film-forming chamber, a second film-forming chamber for forming a metal film and a substrate conveying path for connecting said first and said second film-forming chambers to each other while being shielded from the atmosphere; (iii) selectively forming a first metal film comprising aluminum on said semiconductor or said conductor portion in said first film-forming chamber using an organic aluminum; (iv) conveying said substrate on which said first metal film is formed from said first film-forming chamber through said substrate conveying path to said second film-forming chamber and disposing said substrate in said second film-forming chamber, said film-forming apparatus being shielded from the atmosphere during conveying of said substrate; and (v) nonselectively forming a second metal film on said substrate in said second film-forming chamber.

Claim 3

The process according to claim 1, wherein said first metal is pure aluminum.

Claim 4

The process according to claim 1, wherein said first metal further comprises at least one element selected from the group consisting of Si, Ti and Cu.

Claim 5

The process according to any one of claims 1 to 3, wherein said second metal film is pure aluminum.

Claim 6

The process according to any one of claims 1 to 3, wherein said second metal film is a metal comprising Al and at least one element selected from the group consisting of Si, Ti and Cu.

Claim 7

The process according to any one of claims 1 to 3, wherein said second metal film comprises at least one of Cu, W and Mo as main component.

Claim 8

The process according to claim 1, wherein said second metal film is formed in said second film-forming chamber by a sputtering method.

Claim 9

The process according to claim 1, wherein said second metal film is formed in said second film-forming chamber by a CVD method.

Claim 10

The process according to claim 1, wherein said substrate conveying path comprises a gate valve.

Claim 11

The process according to claim 1, wherein said substrate conveying path comprises a relaying chamber.

Claim 12

The process according to claim 1, wherein said substrate conveying path comprises a cleaning chamber for cleaning the surface of said substrate on which said first metal film is formed.

Claim 13

A process for preparing a semiconductor device comprising the steps of: (i) providing a substrate comprising a semiconductor or a conductor portion and an insulator portion; (ii) disposing said substrate in a first film-forming chamber of a metal film-forming apparatus, said film-forming apparatus comprising said first film-forming chamber, a second film-forming chamber for forming a metal film and a substrate conveying path for connecting said first and said second film-forming chambers to each other while being shielded from the atmosphere; (iii) selectively forming a first metal film comprising aluminum on said semiconductor or said conductor portion in said first film-forming chamber using an organic aluminum to electrically connect said semiconductor or said conductor portion to said first metal film; (iv) conveying said substrate on which said first metal film is formed from said first film-forming chamber through said substrate conveying path to said second film-forming chamber and disposing said substrate in said second film-forming chamber, said film-forming apparatus being shielded from the atmosphere during the conveying of said substrate; and (v) nonselectively forming a second metal film on said substrate in said second film-forming chamber to electrically connect said first metal film to said second metal film.

Claim 14

A process for preparing a semiconductor device comprising the steps of: (i) providing a substrate comprising a semiconductor or a conductor portion and an insulator portion; (ii) disposing said substrate in a first film-forming chamber of a metal film-forming apparatus, said film-forming apparatus comprising said first film-forming chamber, a second film-forming chamber for forming a metal film and a substrate conveying path for connecting said first and said second film-forming chambers to each other while being shielded from the atmosphere; (iii) selectively forming a first metal film comprising aluminum on said semiconductor or said conductor portion in said first film-forming chamber using an organic aluminum to electrically connect said semiconductor or said conductor portion to said first metal film; (iv) conveying said substrate on which said first metal film is formed from said first film-forming chamber through said substrate conveying path to said second film-forming chamber and disposing said substrate in said second film-forming chamber, said film-forming apparatus being shielded from the atmosphere during the conveying of said substrate; and (v) nonselectively forming a second metal film on said substrate in said second film-forming chamber to electrically connect said first metal film to said second metal film.