US5154949A
Expired / Lapsed
US
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Process for forming metal deposited film containing aluminum as main component by use of alkyl aluminum hydride
Assignee: Canon Inc
•
Filing: 1992-02-28
•
Granted: 1992-10-13
•
Expires: 2012-02-28
Abstract
Abstract A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.
Inventors
- 👤 Hitoshi Shindo
- 👤 Takeshi Ichikawa
- 👤 Osamu Ikeda
- 👤 Kazuaki Ohmi
- 👤 Shigeyuki Matsumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 62
Claim 1
Independent Claim
94 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface.
Claim 2
Dependent Claim
94 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface.
Claim 3
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 4
Dependent Claim
15 words
The process according to claim 1, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 5
Dependent Claim
15 words
The process according to claim 1, wherein said gas containing titanium is TiCl 4 .
Claim 6
Dependent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and titanium on said electron donative surface.
Claim 7
Dependent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and titanium on said electron donative surface.
Claim 8
Dependent Claim
15 words
The process according to claim 5, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 9
Dependent Claim
14 words
The process according to claim 5, wherein said alkyl hydride is monomethyl aluminum hydride.
Claim 10
Dependent Claim
15 words
The process according to claim 5, wherein said gas containing titanium is TiCl 4 .
Claim 11
Dependent Claim
103 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface (A).
Claim 12
Dependent Claim
103 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface (A).
Claim 13
Dependent Claim
15 words
The process according to claim 9, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 14
Dependent Claim
15 words
The process according to claim 9, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 15
Dependent Claim
15 words
The process according to claim 9, wherein said gas containing titanium is TiCl 4 .
Claim 16
Dependent Claim
107 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms, a gas containing silicon atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface.
Claim 17
Dependent Claim
107 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing titanium atoms, a gas containing silicon atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and titanium on said electron donative surface.
Claim 18
Dependent Claim
15 words
The process according to claim 13, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 19
Dependent Claim
15 words
The process according to claim 13, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 20
Dependent Claim
15 words
The process according to claim 13, wherein said gas containing titanium is TiCl 4 .
Claim 21
Dependent Claim
94 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and copper on said electron donative surface.
Claim 22
Dependent Claim
94 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and copper on said electron donative surface.
Claim 23
Dependent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and copper on said electron donative surface.
Claim 24
Dependent Claim
100 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and copper on said electron donative surface.
Claim 25
Dependent Claim
17 words
The process according to claim 17 or 18, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 26
Dependent Claim
17 words
The process according to claim 17 or 18, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 27
Dependent Claim
103 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and copper on said electron donative surface (A).
Claim 28
Dependent Claim
103 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum and copper on said electron donative surface (A).
Claim 29
Dependent Claim
31 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is constituted of a material selected from single monocrystalline silicon, polycrystalline silicon and amorphous silicon.
Claim 30
Dependent Claim
45 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is a III-V compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table.
Claim 31
Dependent Claim
44 words
The process according to anyone of claims 1, 5, 17 and 18, wherein said substrate is a II-VI compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table.
Claim 32
Dependent Claim
33 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper.
Claim 33
Dependent Claim
19 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is a metal.
Claim 34
Dependent Claim
19 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is a semiconductor.
Claim 35
Dependent Claim
18 words
The process according to any one of claims 1, 5, 17 and 18, wherein said substrate is silicide.
Claim 36
Dependent Claim
109 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and copper on said electron donative surface (A).
Claim 37
Dependent Claim
109 words
A process for forming a deposited film comprising the steps of: (a) providing a substrate having an electron donative surface (A) and an electron non-donative surface (B) in a space for formation of the deposited film; (b) introducing a gas of an alkyl aluminum hydride, a gas containing silicon atoms, a gas containing copper atoms and hydrogen gas into said space for formation of deposited film; and (c) maintaining the temperature of said electron donative surface (A) within the range of from the decomposition temperature of said alkyl aluminum hydride to 450° C. to form a deposited film comprising aluminum, silicon and copper on said electron donative surface (A).
Claim 38
Dependent Claim
17 words
The process according to claim 21 or 29, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 39
Dependent Claim
17 words
The process according to claim 21 or 29, wherein said alkyl aluminum hydride is monomethyl aluminum hydride.
Claim 40
Dependent Claim
45 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of a material selected from monocrystalline silicon, polycrystalline silicon and amorphous silicon, and said electron non-donative surface (B) is formed of an insulating material.
Claim 41
Dependent Claim
63 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of a III-V group compound semiconductor containing an element belonging to the group III of the periodic table and an element belonging to the group V of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 42
Dependent Claim
63 words
The process according to any one of claims 9, 13, 21, and 29, wherein said electron donative surface (A) is formed of a II-VI group compound semiconductor containing an element belonging to the group II of the periodic table and an element belonging to the group VI of the periodic table, and said electron non-donative surface (B) is formed of an insulating material.
Claim 43
Dependent Claim
50 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of a metal containing at least one element selected from tungsten, molybdenum, tantalum, aluminum, titanium and copper, and said electron non-donative surface (B) is formed of an insulating material.
Claim 44
Dependent Claim
36 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of a metal and said electron non-donative surface (B) is formed of an insulating material.
Claim 45
Dependent Claim
36 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of a semiconductor and said electron non-donative surface (B) is formed of an insulating material.
Claim 46
Dependent Claim
35 words
The process according to any one of claims 9, 13, 21 and 29, wherein said electron donative surface (A) is formed of silicide and said electron non-donative surface (B) is formed of an insulating material.
Claim 47
Dependent Claim
69 words
A process for preparing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming on said insulating film an opening through which the surface of said semiconductor substrate is exposed; and applying chemical vapor deposition method by use of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen to form a deposited film comprising aluminum and titanium selectively in said opening.
Claim 48
Dependent Claim
69 words
A process for preparing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming on said insulating film an opening through which the surface of said semiconductor substrate is exposed; and applying chemical vapor deposition method by use of an alkyl aluminum hydride, a gas containing titanium atoms and hydrogen to form a deposited film comprising aluminum and titanium selectively in said opening.
Claim 49
Dependent Claim
15 words
The process according to claim 39, wherein said alkyl aluminum hydride comprises a methyl group.
Claim 50
Dependent Claim
15 words
The process according to claim 40, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 51
Dependent Claim
70 words
A process for preparing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming on said insulating film an opening through which the surface of said semiconductor substrate is exposed; and applying chemical vapor deposition method by use of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen atoms to form a deposited film comprising aluminum and copper selectively in said opening.
Claim 52
Dependent Claim
70 words
A process for preparing a semiconductor device comprising the steps of: forming an insulating film on a semiconductor substrate; forming on said insulating film an opening through which the surface of said semiconductor substrate is exposed; and applying chemical vapor deposition method by use of an alkyl aluminum hydride, a gas containing copper atoms and hydrogen atoms to form a deposited film comprising aluminum and copper selectively in said opening.
Claim 53
Dependent Claim
15 words
The process according to claim 42, wherein said alkyl aluminum hydride comprises a methyl group.
Claim 54
Dependent Claim
15 words
The process according to claim 43, wherein said alkyl aluminum hydride is dimethyl aluminum hydride.
Claim 55
Dependent Claim
41 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum and titanium on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a titanium atom.
Claim 56
Dependent Claim
41 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum and titanium on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a titanium atom.
Claim 57
Dependent Claim
41 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum and copper on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a copper atom.
Claim 58
Dependent Claim
41 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum and copper on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a copper atom.
Claim 59
Dependent Claim
49 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum, titanium and silicon on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a titanium atom and a gas containing a silicon atom.
Claim 60
Dependent Claim
49 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum, titanium and silicon on said substrate by chemical vapor deposition using alkyl aluminum hydride and a gas containing a titanium atom and a gas containing a silicon atom.
Claim 61
Dependent Claim
48 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum, copper and silicon on said substrate by chemical vapor deposition using alkyl aluminum hydride, a gas containing a copper atom and a gas containing a silicon atom.
Claim 62
Dependent Claim
48 words
A process for forming a metal film comprising the steps of: providing a substrate; and depositing a metal film comprising aluminum, copper and silicon on said substrate by chemical vapor deposition using alkyl aluminum hydride, a gas containing a copper atom and a gas containing a silicon atom.
References Cited (Backward Citations)
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