Sense amplifier for performing a high-speed sensing operation

Claim 2

A sense amplifier for a semiconductor memory device, comprising: first and second memory array blocks each having a plurality of memory cells; a pair of sensing lines each commonly connected to said first and second memory array blocks; a pair of first and second isolation transistors for isolating said first and second memory array blocks from said sensing lines when a given memory cell is selected; a pair of common input/output lines for transferring input/output data to an exterior of said semiconductor memory device; data input/output transistors connected between said sensing lines and said common input/output lines, for enabling access operation of said semiconductor memory device; precharge means connected to said sensing lines and coupled to receive a control signal, for precharging a voltage of said sensing lines to a power voltage amplitude in dependence upon said control signal; and sensing means connected to said sensing lines, for amplifying a potential difference between said sensing lines in dependence on reception of a first latching signal exhibiting said power voltage amplitude before a sensing operation and reception of a second latching signal exhibiting said power voltage amplitude before said sensing operation and exhibiting a reference voltage different from said power voltage amplitude during said sensing operation.

Claim 3

A sense amplifier as claimed in claim 1, wherein said precharge means comprises: a first transistor comprising a first electrode of a principal electrically conducting channel coupled to a first line of said sensing lines and a second electrode of said principal electrically conducting channel coupled to a first node; a second transistor comprising a first electrode of a principal electrically conducting channel coupled to said first node and a second electrode of said principal electrically conducting channel coupled to a second line of said sensing lines; a third transistor comprising a first electrode of a principal electrically conducting channel coupled to said first line of said sensing lines and a second electrode of said principal electrically conducting channel coupled to a second node; a fourth transistor comprising a first electrode of a principal electrically conducting channel coupled to said second node and a second electrode of said principal electrically conducting channel coupled to said second line of said sensing lines; control electrodes of said first transistor and said third transistor being coupled to said second line of said sensing lines; and control electrodes of said second transistor and said fourth transistor being coupled to said first line of said sensing lines.

Claim 4

A sense amplifier as claimed in claim 1, wherein said precharge means comprises: a first load transistor having a gate coupled to receive said control signal, and a channel connected between a power voltage terminal and a first one of said sensing lines; and a second load transistor having a gate coupled to receive said control signal, and a channel connected between said power voltage terminal and a second one of said sensing lines.

Claim 5

A sense amplifier as claimed in claim 1, wherein said sensing means comprises: a first p-type sensing transistor having a channel connected between a first node for receiving said first latching signal and a first one of said sensing lines, and a gate connected to a second one of said sensing lines; a second p-type sensing transistor having a channel connected between said first node and said second one of said sensing lines, and a gate connected to said first one of said sensing lines; a first n-type sensing transistor having a channel connected between a second node for receiving said second latching signal and said first one of said sensing lines, and a gate connected to said second one of said sensing lines; and a second n-type transistor having a channel connected between said second node and said second one of said sensing lines, and a gate connected to said first one of said sensing lines.

Claim 6

A sense amplifier as claimed in claim 1, further comprised of said precharge means precharging the voltage of said sensing lines to said power voltage amplitude only when said control signal is in an active state, and said sensing means amplifying the potential difference between the sensing lines only when said control signal is in an active state.

Claim 7

A semiconductor memory device, comprising a plurality of memory cells; a pair of sensing lines coupled to a selected memory cell from said plurality of memory cells through a pair of isolation transistors; precharging means connected to said sensing lines, for precharging said sensing lines; and sense amplifier means being operable by a pair of clock signals applied with a same logic level during a first state, and a complimentary logic level during a second state, for sensing and amplifying a potential difference between said first and second sensing lines to enable access to data stored in said selected memory cell, said sense amplifier comprising: first sensing node means connected to said first sensing line, for maintaining a potential of said first sensing line at a power voltage level during said first and second state; and second sensing node means connected to said second sensing line, for maintaining the potential of said second sensing line at said power voltage level during said first state, and for maintaining the potential of said second sensing line at a level lower than said power voltage level during said second state.

Claim 8

A semiconductor memory device, comprising a plurality of memory cells; a pair of sensing lines coupled to a selected memory cell from said plurality of memory cells through a pair of isolation transistors; precharging means connected to said sensing lines, for precharging said sensing lines; and sense amplifier means being operable by a pair of clock signals applied with a same logic level during a first state, and a complimentary logic level during a second state, for sensing and amplifying a potential difference between said first and second sensing lines to enable access to data stored in said selected memory cell, said sense amplifier comprising: first sensing node means connected to said first sensing line, for maintaining a potential of said first sensing line at a power voltage level during said first and second state; and second sensing node means connected to said second sensing line, for maintaining the potential of said second sensing line at said power voltage level during said first state, and for maintaining the potential of said second sensing line at a level lower than said power voltage level during said second state.

Claim 9

A sense amplifier as claimed in claim 6, wherein said first and second states are respectively representative of a selection and a non-selection of said sensing lines.

Claim 10

A semiconductor memory device, comprising: a first array of memory cells; a second array of memory cells; a pair of bit lines interposed between said first and second arrays of memory cells, for connecting selected memory cells of said first array with corresponding selected memory cells of said second array; a pair of first and a pair of second isolating transistors, each pair connected to the pair of bit lines respectively, for isolating memory cells of said first and second arrays from said bit lines in dependence upon a sensing operation; a pair of data input/output transistors respectively connected to the pair of bit lines, for selectively transferring data from and to the bit lines; precharging means interposed between the pair of said bit lines, for precharging said bit lines to a precharge voltage in dependence upon a precharge clock signal, said precharging means precharging said bit lines to said precharge voltage only when said precharge clock signal is in an active state; and sense amplifier means for amplifying a potential difference between said bit lines in dependence upon reception of a first latching signal exhibiting said precharge voltage before said sensing operation and reception of a second latching signal exhibiting said precharge voltage before said sensing operation and exhibiting a ground voltage during said sensing operation, said sense amplifier means amplifying said potential difference between said bit lines only when said precharge clock signal is in an inactive state.

Claim 11

A semiconductor memory device, comprising: a first array of memory cells; a second array of memory cells; a pair of bit lines interposed between said first and second arrays of memory cells, for connecting selected memory cells of said first array with corresponding selected memory cells of said second array; a pair of first and a pair of second isolating transistors, each pair connected to the pair of bit lines respectively, for isolating memory cells of said first and second arrays from said bit lines in dependence upon a sensing operation; a pair of data input/output transistors respectively connected to the pair of bit lines, for selectively transferring data from and to the bit lines; precharging means interposed between the pair of said bit lines, for precharging said bit lines to a precharge voltage in dependence upon a precharge clock signal, said precharging means precharging said bit lines to said precharge voltage only when said precharge clock signal is in an active state; and sense amplifier means for amplifying a potential difference between said bit lines in dependence upon reception of a first latching signal exhibiting said precharge voltage before said sensing operation and reception of a second latching signal exhibiting said precharge voltage before said sensing operation and exhibiting a ground voltage during said sensing operation, said sense amplifier means amplifying said potential difference between said bit lines only when said precharge clock signal is in an inactive state.

Claim 12

The semiconductor memory device of claim 8, wherein said sense amplifier comprises: a first p-type transistor having a first electrode of a principal electrically conducting channel coupled to a first bit line of said pair of bit lines and a second electrode of said principal electrically conducting channel coupled to a first node; a second p-type transistor having a first electrode of a principal electrically conducting channel coupled to said first node and a second electrode of said principal electrically conducting channel coupled to a second bit line of said pair of bit lines; a first n-type transistor having a first electrode of a principal electrically conducting channel coupled to said first bit line and a second electrode of said principal electrically conducting channel coupled to a second node; a second n-type transistor having a first electrode of a principal electrically conducting channel coupled to said second node and a second electrode of said principal electrically conducting channel coupled to said second bit line; control electrodes of said first p-type transistor and said first n-type transistor being coupled to said second bit line; and control electrodes of said second p-type transistor and said second n-type transistor being coupled to said first bit line.

Claim 13

The semiconductor memory device of claim 9, further comprised of first and second latching means for conducting said latching signals, said first latching means being coupled to said first node and said second latching means being coupled to said second node.

Claim 14

The semiconductor memory device of claim 8, wherein said sense amplifier comprises: a first p-type transistor having a first electrode of a principal electrically conducting channel coupled to a first bit line of said pair of bit lines and a second electrode of said principal electrically conducting channel coupled to a first node; a second p-type transistor having a first electrode of a principal electrically conducting channel coupled to said first node and a second electrode of said principal electrically conducting channel coupled to a second bit line of said pair of bit lines; a first n-type transistor having a first electrode of a principal electrically conducting channel coupled to said first bit line and a second electrode of said principal electrically conducting channel coupled to a second node; a second n-type transistor having a first electrode of a principal electrically conducting channel coupled to said second node and a second electrode of said principal electrically conducting channel coupled to said second bit line; control electrodes of said first p-type transistor and said first n-type transistor being coupled to said second bit line; and control electrodes of said second p-type transistor and said second n-type transistor being coupled to said first bit line.

Claim 15

The semiconductor memory device of claim 11, further comprised of first and second latching means for conducting said latching signals, said first latching means being coupled to said first node and said second latching means being coupled to said second node.

Claim 16

The semiconductor memory device of claim 8, wherein said precharging means comprises: a first transistor having a first electrode of a principal electrically conducting channel coupled to a first bit line of said pair of bit lines; a second transistor having a first electrode of a principal electrically conducting channel forming a first node with a second electrode of said principal electrically conducting channel of said first transistor, and having a second electrode of said principally electrically conducting channel coupled to a second bit line of said pair of bit lines; means coupled to said first node, for conducting said precharge voltage; and means coupled to control electrodes of said first and second transistors, for conducting said precharge clock signal.

Claim 17

The semiconductor memory device of claim 9, wherein said precharging means comprises: a first precharging transistor having a first electrode of a principal electrically conducting channel coupled to a first bit line of said pair of bit lines; a second precharging transistor having a first electrode of a principal electrically conducting channel forming a first node with a second electrode of said principal electrically conducting channel of said first precharging transistor, and having a second electrode of said principally electrically conducting channel coupled to a second bit line of said pair of bit lines; means coupled to said third node, for conducting said precharge voltage amplitude; and means coupled to control electrodes of said first precharging transistor and said second precharging transistor, for conducting said precharge clock signal.

Claim 18

The semiconductor memory device of claim 10, wherein said precharging means comprises: a first precharging transistor having a first electrode of a principal electrically conducting channel coupled to a first bit line of said pair of bit lines; a second precharging transistor having a first electrode of a principal electrically conducting channel forming a first node with a second electrode of said principal electrically conducting channel of said first precharging transistor, and having a second electrode of said principally electrically conducting channel coupled to a second bit line of said pair of bit lines; means coupled to said third node, for conducting said precharge voltage; and means coupled to control electrodes of said first precharging transistor and said second precharging transistor, for conducting said precharge clock signal.

Claim 19

The semiconductor memory device as claimed in claim 8, wherein said sense amplifier means comprises: a pair of p-type transistors serially interposed between said bit line pair having common channels coupled to receive said first latching signal, and control electrodes respectively connected in a criss-cross pattern with lines; and a pair of n-type transistors serially interposed between said bit line pair having common channels coupled to receive said second latching signal, and control electrodes respectively connected in a criss-cross pattern with said pair of bit lines.

Claim 22

The method for precharging a pair of bit lines as claimed in claim 17, wherein said first reference voltage exhibits a power voltage amplitude, and said second reference voltage exhibits a ground voltage amplitude.