Semiconductor memory device

Claim 2

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on said major surface and provided for each row of said memory cells for selecting the rows of said memory cells a sense amplifier arranged on said major surface between each pair of bit lines for amplifying the voltage across each pair of said bit lines, equalizing means formed on said major surface and operating transiently prior to selection of said memory cell by said word line for equalizing an associated pair of said bit lines, equalizing control means formed on said major surface for setting the operating time interval of said equalizing means, signal generating means formed on said major surface and responsive to address signals supplied for selection of said bit lines and said word lines to generate a signal actuating said equalizing control means, and second signal generating means formed on said major surface and adapted for detecting the transition from the writing to readout to actuate said equalizing control means at the time said transition is detected.

Claim 3

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on said major surface for each row of said memory cells for selecting the rows of said memory cells, a plurality of pairs of common data lines formed on said major surface and connected in common to a specified number of bit line pairs for handling complementary readout data or writing data, a sense amplifier connected on said major surface between each pair of common data lines for amplifying the voltage across each pair of the common data lines, equalizing formed on said major surface and operating transiently prior to memory cell selection by said word line for equalizing a pair of the common data lines equalizing control means formed on said major surface for setting the operating time interval for the equalizing means, signal generating means formed on said major surface and responsive to an address signal supplied for selection of the word lines and the bit lines to generate a signal for actuating said equalizing control means, and second signal generating means formed on said major surface and adapted for detecting the transition from writing to readout and actuating said said equalizing control means at the time said transition is detected.

Claim 4

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on said major surface for each row of said memory cells for selecting the rows of said memory cells, a plurality of pairs of common data lines formed on said major surface and connected in common to a specified number of bit line pairs for handling complementary readout data or writing data, a sense amplifier connected on said major surface between each pair of common data lines for amplifying the voltage across each pair of the common data lines, equalizing formed on said major surface and operating transiently prior to memory cell selection by said word line for equalizing a pair of the common data lines equalizing control means formed on said major surface for setting the operating time interval for the equalizing means, signal generating means formed on said major surface and responsive to an address signal supplied for selection of the word lines and the bit lines to generate a signal for actuating said equalizing control means, and second signal generating means formed on said major surface and adapted for detecting the transition from writing to readout and actuating said said equalizing control means at the time said transition is detected.

Claim 5

The memory device according to claim 2 further comprising bit line equalizing means formed on said major surface and operating transiently prior to memory cell selection by said word line for equalizing a pair of the bit lines, wherein said equalizing control means control said bit line equalizing means and said common data line equalizing means.

Claim 6

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, precharging means formed on said major surface and operating transiently prior to memory cell selection by said word line to precharge each bit line to prevent destruction of data in each memory cell, a plurality of word lines formed on said major surface and provided for each row of said memory cells for selecting the rows of said memory cells, a sense amplifier connected on said major surface between each pair of bit lines and adapted for amplifying the voltage across each pair of the bit lines, precharging control means formed on said major surface for contolling the operating time interval for said precharging means, signal generating means formed on said major surface and responsive to address signals supplied for selection of said bit lines to generate a signal actuating said precharging control means, and second signal generating means formed on said major surface and adapted for detecting the transition from the writing to readout to actuate said precharging control means at the time said transition is selected.

Claim 7

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, precharging means formed on said major surface and operating transiently prior to memory cell selection by said word line to precharge each bit line to prevent destruction of data in each memory cell, a plurality of word lines formed on said major surface and provided for each row of said memory cells for selecting the rows of said memory cells, a sense amplifier connected on said major surface between each pair of bit lines and adapted for amplifying the voltage across each pair of the bit lines, precharging control means formed on said major surface for contolling the operating time interval for said precharging means, signal generating means formed on said major surface and responsive to address signals supplied for selection of said bit lines to generate a signal actuating said precharging control means, and second signal generating means formed on said major surface and adapted for detecting the transition from the writing to readout to actuate said precharging control means at the time said transition is selected.

Claim 8

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on the major surface and provided for each row of each said memory cell for selecting the rows of said memory cells, a plurality of pairs of common data lines formed on said major surface and connected in common to a specified number of pairs of bit lines for handling complementary readout data or writing data, a sense amplifier connected to each pair of common data lines on said major surface and adapted for amplifying the voltage across each pair of the common data lines, precharging means formed on said major surface and operating transiently prior to selection of said memory cell by said word line for precharging an associated pair of said common data, precharging control means formed on said major surface for setting the operating time interval of said precharging means, signal generating means formed on said major surface and responsive to address signals supplied for selection of said bit lines to generate a signal actuating said precharging control means, and second signal generating means formed on said major surface and adapted for detecting the transition from the writing to readout to actuate said precharging control means at the time said transition is detected.

Claim 9

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration and composed of flipflop circuits for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on the major surface and provided for each row of each said memory cell for selecting the rows of said memory cells, a plurality of pairs of common data lines formed on said major surface and connected in common to a specified number of pairs of bit lines for handling complementary readout data or writing data, a sense amplifier connected to each pair of common data lines on said major surface and adapted for amplifying the voltage across each pair of the common data lines, precharging means formed on said major surface and operating transiently prior to selection of said memory cell by said word line for precharging an associated pair of said common data, precharging control means formed on said major surface for setting the operating time interval of said precharging means, signal generating means formed on said major surface and responsive to address signals supplied for selection of said bit lines to generate a signal actuating said precharging control means, and second signal generating means formed on said major surface and adapted for detecting the transition from the writing to readout to actuate said precharging control means at the time said transition is detected.

Claim 10

The memory device according to claim 5 further comprising bit line precharging means formed on said major surface and operating transiently prior to memory cell selection by said word line for precharging a pair of the bit lines, wherein said precharging control means control said bit line precharging means and said common data line precharging means.

Claim 11

The memory device according to any one of the claims 1 to 6 wherein transition from writing to readout is detected on the basis of a write enable signal.

Claim 12

The memory device according to claim 4 comprising equalizing means formed on said major surface and operating transiently prior to memory cell selection by said word line for equalizing a pair of bit lines and equalizing control means formed on said major surface for setting the operating time interval of said equalizing lines, both said equalizing control means and said precharging control means being controlled by the signal from each of said signal generating means.

Claim 13

The memory device according to claim 5 further comprising equalizing means formed on said major surface and operating transiently prior to memory cell selection by said word line for equalizing a pair of the common data lines, and equalizing control means formed on said major surface for setting the operating time interval for said equalizing means, both said equalizing control means and the precharging control means being controlled by the signal from each of said signal generating means.

Claim 14

The memory device according to claim 6 further comprising, equalizing means operating transiently prior to memory cell selection by said word line for equalizing each of a pair of common data lines equalizing means operating transiently prior to selection of said memory cell by said word line for equalizing each of a pair of bit lines, and equalizing control means formed on said major surface for controlling each of said equalizing means, both of said equalizing control means and the precharging control means being controlled by the signal from each of said signal generating means.

Claim 15

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on said major surface and provided for each row of said memory cells for selecting the rows of said memory cells for, a sense amplifier arranged on said major surface between each pair of bit lines for amplifying the voltage across each pair of said bit lines, and an output circuit for amplifying the signal from said sense amplifier, said output circuit including an output terminal for outputting amplified output signals from said sense amplifier output means for driving said output terminal to a first or a second level, level detecting means for detecting the level at said output terminal, and precharging means responsive to a signal from said level detection means to precharge the level at said output terminal to a third level between the first level and the second level.

Claim 16

A memory device comprising a semiconductor substrate having a major surface, a plurality of memory cells arranged on said major surface in a matrix configuration for data storage, a plurality of pairs of bit lines formed on said major surface and coupled to each column of said memory cells for handling complementary read-out data or write data, a plurality of word lines formed on said major surface and provided for each row of said memory cells for selecting the rows of said memory cells for, a sense amplifier arranged on said major surface between each pair of bit lines for amplifying the voltage across each pair of said bit lines, and an output circuit for amplifying the signal from said sense amplifier, said output circuit including an output terminal for outputting amplified output signals from said sense amplifier output means for driving said output terminal to a first or a second level, level detecting means for detecting the level at said output terminal, and precharging means responsive to a signal from said level detection means to precharge the level at said output terminal to a third level between the first level and the second level.

Claim 17

The memory device according to claim 11 wherein said level detection means operate transient by an equalizing signal generated in response to address transition.

Claim 18

The memory device according to claim 11 wherein said precharging means include a MOS transistor having the drain connected at least to said output terminal and having its gate connected to an output terminal of said level detecting means.

Claim 19

The memory device according to claim 11 wherein said precharging means is a MOS transistor having its source connected at least to said output terminal and having its gate connected to the output terminal of said level detecting means.

Claim 20

The memory device according to claim 11 wherein said third level is the output deciding level.

Claim 21

The memory device according to claim 11 wherein the first level is the source voltage, the second level is the ground voltage and the third level to the output deciding level of a TTL compatible.