Production method of an HEMT semiconductor device

Claim 1

A method of producing an HEMT comprising: depositing a thermohardening resin on a compound semiconductor substrate including an active region; covering regions of said semiconductor substrate corresponding to gate electrode, drain electrode, and source electrode production regions on said thermohardening resin with photoresist; irradiating said thermohardening resin with a particle beam using said photoresist as a mask to harden the thermohardening resin where irradiated by said particle beam; removing said photoresist; removing said thermohardening resin at said gate electrode production region not hardened by said particle beam to expose said compound semiconductor substrate at said gate electrode production region; etching said exposed compound semiconductor substrate to produce a recess groove reaching said active region; depositing a metal in said recess groove forming a Schottky barrier with said active region; removing said thermohardening resin at said source and drain electrode producing regions not hardened by said particle beam to expose said compound semiconductor substrate at said source and drain production regions; and depositing a metal producing ohmic electrodes on the exposed semiconductor substrate at the source and drain production regions.

Claim 2

A method of producing an HEMT comprising: depositing a thermohardening resin on a compound semiconductor substrate including an active region; covering regions of said semiconductor substrate corresponding to gate electrode, drain electrode, and source electrode production regions on said thermohardening resin with photoresist; irradiating said thermohardening resin with a particle beam using said photoresist as a mask to harden the thermohardening resin where irradiated by said particle beam; removing said photoresist; removing said thermohardening resin at said gate electrode production region not hardened by said particle beam to expose said compound semiconductor substrate at said gate electrode production region; etching said exposed compound semiconductor substrate to produce a recess groove reaching said active region; depositing a metal in said recess groove forming a Schottky barrier with said active region; removing said thermohardening resin at said source and drain electrode producing regions not hardened by said particle beam to expose said compound semiconductor substrate at said source and drain production regions; and depositing a metal producing ohmic electrodes on the exposed semiconductor substrate at the source and drain production regions.