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EP0074845A2
Expired / Lapsed
EP
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Etching polyimide resin layers and method of manufacturing a semiconductor device having a layer of polyimide resin
Assignee: Fujitsu Ltd
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Filing: 1982-09-14
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Granted: —
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Expires: 2002-09-14
Abstract
Abstract The susceptibility to etching of a polyimide resin layer is controlled by implanting ions into the layer. A high close of implanted ions, for example 1 x 10 14 cm- 2 substantially prevents etching.
Inventors
- 👤 Nobuhiro C/O Fujitsu Limited Uchiyama
- 👤 Masataka C/O Fujitsu Limited Shingu
- 👤 Saburo C/O Fujitsu Limited Tsukada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 18:26
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; C; C09; C09K; C09K13/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
23 words
1 . A method of modifying the susceptibility of a polyimide resin layer to etching, comprising implanting ions into the polyimide resin layer.
Claim 2
Dependent Claim
23 words
1 . A method of modifying the susceptibility of a polyimide resin layer to etching, comprising implanting ions into the polyimide resin layer.
Claim 3
Independent Claim
45 words
A method of selectively etching a polyimide resin layer, comprising implanting ions into a selected portion of the layer, and etching the layer with an etchant, the selected portion being rendered less susceptible to etching by the etchant by virtue of the implanted ions. ;
Claim 4
Independent Claim
45 words
A method of selectively etching a polyimide resin layer, comprising implanting ions into a selected portion of the layer, and etching the layer with an etchant, the selected portion being rendered less susceptible to etching by the etchant by virtue of the implanted ions. ;
Claim 5
Independent Claim
70 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a polyimide resin layer on a substrate, implanting ions into a portion of the polyimide resin layer, to substantially decrease the susceptibility of the said portion of the polyimide resin layer to etching, and carrying out selective etching of the polyimide resin layer so that etching is substantially blocked in the said portion of the polyimide resin layer.
Claim 6
Independent Claim
70 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a polyimide resin layer on a substrate, implanting ions into a portion of the polyimide resin layer, to substantially decrease the susceptibility of the said portion of the polyimide resin layer to etching, and carrying out selective etching of the polyimide resin layer so that etching is substantially blocked in the said portion of the polyimide resin layer.
Claim 7
Dependent Claim
28 words
A method as claimed in Claim 1, 2 or 3, in which the ions are implanted with dosage of more than 1 x 10 13 cm -2 .
Claim 8
Independent Claim
35 words
A method as claimed in Claimed 1, 2, 3 or 4, in which the said ions are impurity ions selected from the group consisting of arsenic ions, phosphorus ions, boron ions and boron difluoride ions.
Claim 9
Dependent Claim
22 words
A method as claimed in Claim 2 or 3, in which the said etching is carried out using an etchant containing hydrazine.
Claim 10
Dependent Claim
137 words
.7. A method of manufacturing a semiconductor device having a multilayer wiring structure, comprising the steps of: forming a first-level wiring layer on a substrate, forming a first polyimide resin layer on the substrate to form an even surface, with at least a part of the first-level wiring layer being exposed through the first polyimide layer, implanting ions into the firsi polyimide resin layer to substantially decrese its susceptibility to etching, forming a second polyimide resin layer on the implanted first polyimide resin layer and the first-level wiring layer, selectively etching the second polyimide resin layer to form a through hole therein, in which a part of the first-level wiring layer is exposed, and forming on said second polyimide resin layer a second-level wiring layer which is connected to the first-level wiring layer through the through hole.
Claim 11
Dependent Claim
137 words
.7. A method of manufacturing a semiconductor device having a multilayer wiring structure, comprising the steps of: forming a first-level wiring layer on a substrate, forming a first polyimide resin layer on the substrate to form an even surface, with at least a part of the first-level wiring layer being exposed through the first polyimide layer, implanting ions into the firsi polyimide resin layer to substantially decrese its susceptibility to etching, forming a second polyimide resin layer on the implanted first polyimide resin layer and the first-level wiring layer, selectively etching the second polyimide resin layer to form a through hole therein, in which a part of the first-level wiring layer is exposed, and forming on said second polyimide resin layer a second-level wiring layer which is connected to the first-level wiring layer through the through hole.
Claim 12
Dependent Claim
53 words
A method as claimed in Claim 7, wherein the first polyimide resin layer is formed by a process which comprises the steps of: forming a polyimide resin coating .over the first-level wiring layer on the substrate, and removing evenly a surface portion of said polyimide resin coating to expose the first-level wiring layer.
References Cited (Backward Citations)
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