EP0201111A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device manufacture using an implantation step
Assignee: Philips Electronics UK Ltd
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Filing: 1986-03-07
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Granted: —
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Expires: 2006-03-07
Abstract
Abstract In the manufacture of a semiconductor device, e.g. a bipolar or MOS transistor, a narrow beam (4) of ions is de-' flected across a major surface of a semiconductor device body (1, 2) to implant ions, e.g. of boron, into a region (3) of the body. In accordance with the invention a resist mask (5a) is obtained autoregistered with the implanted region (3) by effecting the implantation through a layer (5) of ion-sensitive resist thus exposed by the ion beam (4) in the area (5a) overlying the implanted region (3) at the same time as the implantation occurs into the body region (3). The non-exposed area of the layer (5) is afterwards removed by developing the resist, and the ion-exposed area (5a) is then used as a mask during a subsequent processing step, e.g. an etching or doping step, in the device manufacture. The implanted region (3) may be, e.g., a peripheral base region portion of a bipolar transistor or a parasitic-channel stopper below a field insulating layer (2) of an MOS integrated circuit.
Inventors
- 👤 Peter James Daniel
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 04:34
CPC Classifications
H; H10; H10P; H10P76/00; H10P76/20; H10P76/204; H10P76/2049; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/21; H10P30/212; H10P30/22; H10P50/00; H10P50/73; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/975; Y10S438/978
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
138 words
A method of manufacturing a semiconductor device, in which ions are implanted into a region of a semiconductor device body by deflecting in a pattern across a major surface of the body a beam of ions which are of sufficient energy to be implanted in the body, characterised in that the implantation into said region is effected through a layer of ion-sensitive resist provided on the major surface of the body, which layer is exposed by the ion beam in the area overlying said region of the body at the same time as the implantation occurs into said region, after which the non-exposed area of the layer is removed by developing the resist, and the ion-exposed area of the resist layer is then used as a mask during a subsequent processing step in the manufacture of the device.
Claim 2
Independent Claim
138 words
A method of manufacturing a semiconductor device, in which ions are implanted into a region of a semiconductor device body by deflecting in a pattern across a major surface of the body a beam of ions which are of sufficient energy to be implanted in the body, characterised in that the implantation into said region is effected through a layer of ion-sensitive resist provided on the major surface of the body, which layer is exposed by the ion beam in the area overlying said region of the body at the same time as the implantation occurs into said region, after which the non-exposed area of the layer is removed by developing the resist, and the ion-exposed area of the resist layer is then used as a mask during a subsequent processing step in the manufacture of the device.
Claim 3
Dependent Claim
81 words
A method as claimed in Claim 1, further characterised in that the beam comprises ions of a dopant characteristic of one conductivity type which are implanted to form a region of the one conductivity type, and the ion-exposed area of the resist layer is used as a mask to define at least partly the lateral extent of a region of the opposite conductivity type which is formed in a part of the body beside the region of said one conductivity type.
Claim 4
Dependent Claim
119 words
A method as claimed in Claim 2, further characterised in that the layer of ion-sensitive resist is provided on an insulating layer at said major surface of the body, in that the ions implanted to form the region of the one conductivity type penetrate the insulating layer as well as the resist layer, and in that the ion-exposed area of the resist layer is used as a mask during an etching step to remove the insulating layer from an area not overlying the said region and thereby form in the insulating layer a window which is subsequently used to introduce dopant characteristic of said opposite conductivity type into the body to form said region of said opposite conductivity type.
Claim 5
Dependent Claim
82 words
A method as claimed in Claim 3, further characterised in that the device is an integrated circuit comprising field-effect transistors, in that a plurality of said windows are formed in the insulating layer, in that a field-effect transistor is formed at each of said windows, and in that the region of said one conductivity type is sufficiently highly doped to prevent the occurrence of a parasitic channel of said opposite conductivity type below the parts of the insulating layer between the windows.
Claim 6
Dependent Claim
80 words
A method as claimed in Claim 4, further characterised in that at least one of the field-effect transistors has an insulated gate provided locally across the window before introducing the dopant of said opposite conductivity type at the window to form source and drain regions of the transistor, the lateral extent of these source and drain regions of said opposite conductivity type being defined by the ion-exposed area of the resist layer and by the insulated gate of the transistor.
Claim 7
Dependent Claim
67 words
A method as claimed in Claim 2 or Claim 3, further characterised in that the device comprises a bipolar transistor an emitter region of which is provided by said region of the opposite conductivity type, and in that the region of said one conductivity type formed by the implantation provides a highly doped portion of a base region of the transistor which laterally surrounds the emitter region.
References Cited (Backward Citations)
No citation records indexed.
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