Patent US5290712A successfully refreshed from Google Patents.
US5290712A
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Process for forming crystalline semiconductor film
Assignee: Canon Inc
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Filing: 1991-11-13
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Granted: 1994-03-01
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Expires: 2011-11-13
Abstract
Abstract A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
Inventors
- 👤 Nobuhiko Sato
- 👤 Takao Yonehara
- 👤 Hideya Kumomi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 12:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/22; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
108 words
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises: (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except at a fine region having a mask provided thereon and corresponding to an area not more than 5 μm in diameter therein, (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and (iii) making a crystal grow at the crystal nucleus as a growth point.
Claim 2
Dependent Claim
108 words
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises: (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except at a fine region having a mask provided thereon and corresponding to an area not more than 5 μm in diameter therein, (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and (iii) making a crystal grow at the crystal nucleus as a growth point.
Claim 3
Dependent Claim
135 words
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises: (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film such that a fine region having a mask provided thereon, having an area not more than 5 μm in diameter and having a lower degree of implantation damage than that of the other remaining regions is created at the boundary between the amorphous semiconductor film and the base material, (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating only a single crystal-nucleus from the fine region, and (iii) making a crystal grow at the crystal nucleus as a growth point.
Claim 4
Dependent Claim
135 words
A process for forming a polycrystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material, which comprises: (i) selectively implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film such that a fine region having a mask provided thereon, having an area not more than 5 μm in diameter and having a lower degree of implantation damage than that of the other remaining regions is created at the boundary between the amorphous semiconductor film and the base material, (ii) heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating only a single crystal-nucleus from the fine region, and (iii) making a crystal grow at the crystal nucleus as a growth point.
Claim 5
Dependent Claim
40 words
A process according to claim 2, wherein the amorphous semiconductor film is a semiconductor film having an amorphous structure formed during the deposition of the film or a semiconductor film made amorphous by ion implantation of a polycrystalline semiconductor film.
Claim 6
Dependent Claim
47 words
A process according to claim 2, wherein the amorphous semiconductor film is a semiconductor film made amorphous form a polycrystalline semiconductor film by ion implantation such that the projection range of the ion implantation reaches positions near the middle of the film-thickness of the polycrystalline semiconductor film.
Claim 7
Dependent Claim
73 words
A process according to claim 2, wherein the fine region is formed by effecting ion implantation into the amorphous semiconductor film under provision of a resist-mask on the amorphous semiconductor film so that the projection range of the ion implantation reaches positions near the boundary of the amorphous semiconductor film to the base material, thereby making the degree of ion implantation damage in the fine region lower than in the unmasked ion-implanted region.
Claim 8
Dependent Claim
111 words
A process according to claim 3, wherein the fine region is formed by ion implantation into %he polycrystalline semiconductor film under provision of a resist mask in the region corresponding to the fine region on the polycrystalline semiconductor film, the resist mask being capable of shortening the projection range, so that the projection range reaches positions near the boundary of-the polycrystalline semiconductor film to the-base material in other regions than the resist-masked region, thereby effecting by one run the conversion of the polycrystalline semiconductor film to amorphous state and the formation of the fine region lower in a degree of ion implantation damage than in the region except the masked region.
Claim 9
Dependent Claim
26 words
A process according to any one of claims 1 and 2 wherein the heat treatment is carried out in a plurality of runs at different temperatures.
Claim 10
Dependent Claim
141 words
A process for forming a polycrystalline semiconductor film, which comprises: (i) providing a region having a mask provided thereon and small enough to form only a single crystal-nucleus by heat treatment at a desired position of an amorphous semiconductor film provided on a base material; (ii) selectively implanting ions of the element constituting the amorphous semiconductor film into the amorphous semiconductor film in areas not being provided with the mask; (iii) carrying out a first heat treatment of the amorphous semiconductor film at a first temperature not higher than the melting point of the amorphous semiconductor film, thereby forming only a single crystal-nucleus in the small region; and (iv) carrying out a second heat treatment of the amorphous semiconductor film at a second temperature lower than the first temperature, thereby making a crystal grow at the nucleus as a growth point.
Claim 11
Dependent Claim
141 words
A process for forming a polycrystalline semiconductor film, which comprises: (i) providing a region having a mask provided thereon and small enough to form only a single crystal-nucleus by heat treatment at a desired position of an amorphous semiconductor film provided on a base material; (ii) selectively implanting ions of the element constituting the amorphous semiconductor film into the amorphous semiconductor film in areas not being provided with the mask; (iii) carrying out a first heat treatment of the amorphous semiconductor film at a first temperature not higher than the melting point of the amorphous semiconductor film, thereby forming only a single crystal-nucleus in the small region; and (iv) carrying out a second heat treatment of the amorphous semiconductor film at a second temperature lower than the first temperature, thereby making a crystal grow at the nucleus as a growth point.
Claim 12
Dependent Claim
48 words
A process according to claim 8, wherein the amorphous semiconductor film is an amorphous semiconductor film formed by implanting ions of an element constituting a polycrystalline semiconductor film into the polycrystalline semiconductor film thereby making the polycrystalline semiconductor film amorphous or by deposition by a gas phase process.
Claim 13
Dependent Claim
23 words
A process according to claim 8, wherein the fine region is a circular area having a diameter of not more than 5 μm.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-02-28 | 1997-08-30 | 1998-03-01 | $2000.00 | Window Closed / Lapsed |
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