EP0308166A2
Expired / Lapsed
EP
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Polycrystalline film formation
Assignee: Xerox Corp
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Filing: 1988-09-13
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Granted: —
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Expires: 2008-09-13
Abstract
Abstract A method of forming large grain polycrystalline films by deep ion implantation (16) into a composite structure, comprising a layer of amorphous semiconductor material (12) upon an insulating substrate (10). Implantation is of a selected ion species at an implant energy and dosage sufficient to disrupt the interface (18) between the amorphous layer (12) and the substrate (10) and to retard the process of nucleation in subsequent random crystallization upon thermal annealing. The crystals continue to grow, e.g. to a size of 2-3 µm, until they encounter other growing grains which mutually impede further growth.
Inventors
- 👤 Anne Chiang
- 👤 I-Wei Wu
- 👤 Tiao-Yuan Huang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 21:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/38; H10P14/3802; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
98 words
A method for forming large grain polycrystalline films comprising the steps of providing a substrate of insulating material, depositing a layer of amorphous semiconductor material upon said substrate to form a composite structure, implanting a selected ion species into said composite structure at an implant energy and dosage sufficient to disrupt the interface between said amorphous layer and said substrate and thereby retard nucleation when the composite structure is annealed, and annealing said composite structure so as to cause random nucleation within said amorphous layer and to cause grain growth saturation to form a large grain polycrystalline film.
Claim 2
Independent Claim
98 words
A method for forming large grain polycrystalline films comprising the steps of providing a substrate of insulating material, depositing a layer of amorphous semiconductor material upon said substrate to form a composite structure, implanting a selected ion species into said composite structure at an implant energy and dosage sufficient to disrupt the interface between said amorphous layer and said substrate and thereby retard nucleation when the composite structure is annealed, and annealing said composite structure so as to cause random nucleation within said amorphous layer and to cause grain growth saturation to form a large grain polycrystalline film.
Claim 3
Dependent Claim
38 words
The of claim 1, wherein the selected ion species is implanted into said composite structure at an implant energy and dosage sufficient to cause the maximum kinetic energy of said implantation to be deposited substantially at said interface.
Claim 4
Dependent Claim
29 words
The method of claim 1 or claim 2 wherein said amorphous semiconductor material is elemental and said ion species is of the same element as said amorphous semiconductor material.
Claim 5
Independent Claim
13 words
The method of any preceding claim wherein said amorphous semiconductor material is silicon.
Claim 6
Independent Claim
27 words
The method of any preceding claim wherein said ion species is of a different element than said amorphous semiconductor material in order to dope said semiconductor material.
Claim 7
Independent Claim
30 words
The method of any preceding claim wherein said substrate comprises silicon dioxide and said implanting step causes oxygen to recoil across the interface from said substrate into said amorphous layer.
Claim 8
Independent Claim
33 words
The method of any of claims 1 to 5, wherein said substrate comprises silicon nitride and said implanting step causes nitrogen to recoil across the interface from said substrate into said amorphous layer.
References Cited (Backward Citations)
No citation records indexed.
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