US5281283A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Group III-V compound crystal article using selective epitaxial growth
Assignee: Canon Inc
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Filing: 1992-12-04
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Granted: 1994-01-25
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Expires: 2012-12-04
Abstract
Abstract A III-V group compound crystal article comprises a substrate having a non-nucleation surface with smaller nucleation density (S NDS ) and a nucleation surface (S NDL ) which is arranged adjacent to said non-nucleation surface (S NDS ), has a sufficiently small area for a crystal to grow only from a single nucleus and a larger nucleation density (ND L ) than the nucleation density (ND S ) of said non-nucleation surface (S NDS ) and is comprised of an amorphous material, and a III-V group compound monocrystal grown from said single nucleus on said substrate and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Inventors
- 👤 Hiroyuki Tokunaga
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:51
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/18; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/27; H10P14/271; H10P14/274; H10P14/29; H10P14/2901; H10P14/2921; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/026
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
110 words
A Group III-V compound crystal article comprising a substrate having a non-nucleation surface with a smaller nucleation density (S NDS ) and a nucleation surface with a larger nucleation density (S NDL ), the nucleation density of the nucleation surface being greater than the nucleation density of the non-nucleation surface, said non-nucleation surface and said nucleation surface being arranged adjacent to each other and said nucleation surface being an amorphous material and having a sufficiently small area so as to form only a single nucleus from which a Group III-V compound monocrystal is grown and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 2
Dependent Claim
110 words
A Group III-V compound crystal article comprising a substrate having a non-nucleation surface with a smaller nucleation density (S NDS ) and a nucleation surface with a larger nucleation density (S NDL ), the nucleation density of the nucleation surface being greater than the nucleation density of the non-nucleation surface, said non-nucleation surface and said nucleation surface being arranged adjacent to each other and said nucleation surface being an amorphous material and having a sufficiently small area so as to form only a single nucleus from which a Group III-V compound monocrystal is grown and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 3
Dependent Claim
23 words
A III-V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number.
Claim 4
Dependent Claim
25 words
A III-V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized.
Claim 5
Dependent Claim
33 words
A III-V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized regularly within the non-nucleation surface (S NDS ).
Claim 6
Dependent Claim
33 words
A III-V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is arranged in a plural number as sectionalized irregularly within the non-nucleation surface (S NDS ).
Claim 7
Dependent Claim
36 words
A III-V group compound crystal article according to claim 2, wherein the monocrystals grown respectively from said nucleation surfaces (S NDL ) are adjacent to the monocrystals grown from the adjoining nucleation surfaces (S NDL ).
Claim 8
Dependent Claim
37 words
A III-V group compound crystal article according to claim 2, wherein the monocrystals grown respectively from said nucleation surfaces (S NDL ) are spatially apart from the monocrystals grown from the adjoining nucleation surfaces (S NDL ).
Claim 9
Dependent Claim
53 words
A III-V group compound crystal article according to claim 1, wherein said nucleation surface (S NDL ) is formed on the bottom surface of a concavity with a desired shape provided on said non-nucleation surface (S NDS ), and said single crystal is formed in shape of an island embedding said concavity therein.
Claim 10
Dependent Claim
18 words
A III-V group compound crystal article according to claim 1, wherein said amorphous material is SiO 2 .
Claim 11
Dependent Claim
24 words
A III-V group compound crystal article according to claim 1, wherein said III-V group compound semiconductor is a binary system III-V group compound semiconductor.
Claim 12
Dependent Claim
24 words
A III-V group compound crystal article according to claim 1, wherein said III-V group compound semiconductor is a mixed crystal III-V group compound semiconductor.
Claim 13
Dependent Claim
114 words
A ternary Group III-V compound mixed crystal article comprising a substrate having a non-nucleation surface with a smaller nucleation density (S NDS ) and a nucleation surface with a larger nucleation density (S NDL ), the nucleation density of the nucleation surface being greater than the nucleation density of the non-nucleation surface, said non-nucleation surface and said nucleation surface being arranged adjacent to each other and said nucleation surface being an amorphous material and having a sufficiently small area so as to form only a single nucleus from which a ternary Group III-V compound mixed monocrystal is grown and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 14
Dependent Claim
114 words
A ternary Group III-V compound mixed crystal article comprising a substrate having a non-nucleation surface with a smaller nucleation density (S NDS ) and a nucleation surface with a larger nucleation density (S NDL ), the nucleation density of the nucleation surface being greater than the nucleation density of the non-nucleation surface, said non-nucleation surface and said nucleation surface being arranged adjacent to each other and said nucleation surface being an amorphous material and having a sufficiently small area so as to form only a single nucleus from which a ternary Group III-V compound mixed monocrystal is grown and spread on said non-nucleation surface (S NDS ) beyond said nucleation surface (S NDL ).
Claim 15
Dependent Claim
15 words
The crystal article according to claim 12, wherein said ternary Group III-V compound is GaAlAs.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |