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Patent US5279984A successfully refreshed from Google Patents.
US5279984A
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Method for producing a semiconductor integrated circuit device in which circuit functions can be remedied or changed
Assignee: Mitsubishi Electric Corp
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Filing: 1993-04-12
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Granted: 1994-01-18
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Expires: 2013-04-12
Abstract
Abstract A semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing at least a portion of a circuit pattern and a method for producing such semiconductor integrated circuit device. The circuit pattern is formed on the semiconductor substrate. A field shield plate is formed on the major surface of the semiconductor substrate for electrically separating respective elements constituting the circuit. The circuit pattern includes a fuse element. The fuse element is provided on the field shield plate. The portion of the field shield plate lying directly below the fuse element is isolated from other portions of the field shield plate. In such semiconductor integrated circuit device, the portion of the field shield plate lying directly below the fuse element is separated from other portions of the field shield plate, so that short-circuiting between the semiconductor substrate and the field shield plate cannot occur even when the laser beam is irradiated with a laser beam deviation at the time of severing of the fuse element.
Inventors
- 👤 Mitsuya Kinoshita
- 👤 Kazutami Arimoto
- 👤 Kiyohiro Furutani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:27
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/067; H10W20/068; H10D; H10D84/00; H10D84/90; H10W20/40; H10W20/49; H10W20/493; H10W20/494
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
143 words
A method for producing a semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing a fuse element contained in a circuit pattern, comprising the steps of forming a thin oxide film on the major surface of a semiconductor substrate, forming an electrically conductive layer, which is to be a field shield plate, on said oxide film, patterning said electrically conductive layer so that an opening is formed at a portion thereof which is to be a region for active element, and so that a portion thereof which is directly below said fuse element to be formed is distinct and isolated from other portions of said electrically conductive layer, covering the electrical conductive layer thus formed with an isolator, and subsequently forming the circuit pattern inclusive of said fuse element on the major surface of said semiconductor substrate.
Claim 2
Independent Claim
143 words
A method for producing a semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing a fuse element contained in a circuit pattern, comprising the steps of forming a thin oxide film on the major surface of a semiconductor substrate, forming an electrically conductive layer, which is to be a field shield plate, on said oxide film, patterning said electrically conductive layer so that an opening is formed at a portion thereof which is to be a region for active element, and so that a portion thereof which is directly below said fuse element to be formed is distinct and isolated from other portions of said electrically conductive layer, covering the electrical conductive layer thus formed with an isolator, and subsequently forming the circuit pattern inclusive of said fuse element on the major surface of said semiconductor substrate.
Claim 3
Independent Claim
135 words
A method for producing a semiconductor integrated circuit device on which circuit functions can be remedied or changed by severing a fuse element contained in a circuit pattern, comprising the steps of forming a thin oxide film on the major surface of a semiconductor substrate, forming an electrically conductive layer, which is to be a field shield plate, on said oxide film, patterning said electrically conductive layer so that an opening is formed at a portion thereof which is to be a region for active element, and so that a portion thereof directly below said fuse element to be formed is selectively removed, covering the pattern of the electrically conductive layer thus formed with an isolator, and subsequently forming the circuit pattern inclusive of said fuse element on the major surface of said semiconductor substrate.
Claim 4
Independent Claim
135 words
A method for producing a semiconductor integrated circuit device on which circuit functions can be remedied or changed by severing a fuse element contained in a circuit pattern, comprising the steps of forming a thin oxide film on the major surface of a semiconductor substrate, forming an electrically conductive layer, which is to be a field shield plate, on said oxide film, patterning said electrically conductive layer so that an opening is formed at a portion thereof which is to be a region for active element, and so that a portion thereof directly below said fuse element to be formed is selectively removed, covering the pattern of the electrically conductive layer thus formed with an isolator, and subsequently forming the circuit pattern inclusive of said fuse element on the major surface of said semiconductor substrate.
References Cited (Backward Citations)
US3959047A
Cited
US4219827A
Cited
JPS5699406A
Cited
US4437107A
Cited
US4581628A
Cited
US4814853A
Cited
US4455567A
Cited
US4682204A
Cited
JPS58183837A
Cited
US4641286A
Cited
US4598462A
Cited
JPS6035534A
Cited
JPS6076140A
Cited
US4570331A
Cited
US4795720A
Cited
US4748491A
Cited
JPS62162353A
Cited
US4757359A
Cited
US4893167A
Cited
US4984054A
Cited
US4853758A
Cited
US4864379A
Cited
US4881106A
Cited
US5067000A
Cited
US5025300A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-17 | 1997-07-19 | 1998-01-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-17 | 2001-07-19 | 2002-01-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-17 | 2005-07-19 | 2006-01-18 | $7700.00 | Window Closed / Lapsed |