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US4748491A Expired / Lapsed US ⏱️ 0.0 years remaining

Redundant circuit of semiconductor device and method of producing same

Assignee: Mitsubishi Electric Corp
•
Filing: 1986-10-08
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Granted: 1988-05-31
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Expires: 2006-10-08
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Abstract

Abstract A redundant circuit of a semiconductor device comprises a fuse (73) for laser trimming to connect between aluminum interconnections (6). The fuse (73) has a two-layer structure comprising a first film (3a) of polysilicon and a second film (7a) formed on the film (3a) of metal silicide, the line width l 0 of the first film (3a) being shorter than the line width l 1 of the second layer (7a). In addition, a PSG film (4) is formed to cover the fuse (73), and the laser beam is irradiated on the PSG film (4) in disconnecting the fuse (73). Accordingly, the first film (3a) having a short line width is uniformly fused and expanded, the fuse (73) is uniformly disconnected, and an opening (10) formed after explosion and splash thereof becomes smaller.

Inventors

  • 👤 Hiroshi Takagi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 16:52
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/493; H10W20/494

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 93 words
A redundant circuit of a semiconductor device comprising; a first metal interconnection layer, a second metal interconnection layer spaced apart from said first metal interconnection layer, a fuse for electrically connecting said first and second metal interconnection layers, said fuse having a two-layer structure comprising a first linear film of a first material and a second linear film layer of a second material formed on said first film, and a line width of said first film being narrower than that of said second film, and a glass film formed to cover said fuse.
Claim 2
Dependent Claim 93 words
A redundant circuit of a semiconductor device comprising; a first metal interconnection layer, a second metal interconnection layer spaced apart from said first metal interconnection layer, a fuse for electrically connecting said first and second metal interconnection layers, said fuse having a two-layer structure comprising a first linear film of a first material and a second linear film layer of a second material formed on said first film, and a line width of said first film being narrower than that of said second film, and a glass film formed to cover said fuse.
Claim 3
Dependent Claim 25 words
A redundant circuit of a semiconductor device in accordance with claim 1, wherein said first material is polysilicon and said second material is metal silicide.
Claim 4
Dependent Claim 31 words
A redundant circuit of a semiconductor device in accordance with claim 2, wherein said second material is selected from a group including molybdenum silicide, tungsten silicide, titanium silicide, and tantalum silicide.
Claim 5
Dependent Claim 20 words
A redundant circuit of a semiconductor device in accordance with claim 1, wherein said glass film is a PSG film.
Claim 6
Dependent Claim 36 words
A redundant circuit of a semiconductor device in accordance with claim 1, wherein said spaced apart first and second metal interconnection layers are connected to said fuse through a contact hole formed on siad glass film.

References Cited (Backward Citations)

US4135295A Cited
US4518981A Cited
US4617723A Cited
JPS59148198A Cited
US4628590A Cited
US4602420A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1991-05-31 1991-11-30 1992-05-31 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1995-05-31 1995-11-30 1996-05-31 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1999-05-31 1999-11-30 2000-05-31 $7700.00 Window Closed / Lapsed

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