Semiconductor device

Abstract

Abstract PURPOSE:To prevent it for a fuse to be re-conducted even when the semiconductor substrate curved and water infiltrated in from aperture parts by a method wherein after the fuse provided on the substrate was fuse-cut, an insulator is entered in an interstice at the cutting place of the fuse and is made to interpose therein. CONSTITUTION:A fuse 3 having a cutting part 3a is formed on the surface of a field oxide film 2 formed on a semiconductor substrate 1 by performing an etching on a poly silicon layer on the film 2. An interlayer insulating film 4 and a second interlayer insulating film 5 are formed and an aperture is provided in the film 5, a passivation film 7 is formed and aperture parts 7a are formed in the film 7 and the film 4, and the cutting part 3a of the fuse 3 is made to expose. After the cutting part 3a was fuse-cut by impressing voltage, an insulating film 8 like a PSG film, which can be fused with heat, is formed and laser beams are irradiated. The fused PSG film intrudes in an interstice at the cutting place A of the fuse 3 and cures therein, thereby enabling to prevent it for the cutting place of the fuse 3 to be reconducted due to curve of the substrate 1 and infiltration of water into the aperture parts 7a.

Inventors

• 👤 Toshifumi Takeda
• 👤 敏文 竹田

Bibliographic Details