US5264724A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon nitride for application as the gate dielectric in MOS devices
Assignee: University of Arkansas at Little Rock
•
Filing: 1990-05-29
•
Granted: 1993-11-23
•
Expires: 2010-05-29
Abstract
Abstract A thin film layer of silicon nitride is deposited on silicon substrate by plasma enhanced chemical vapor deposition techniques is stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C. to about 700° C. and at times ranging from about 3 seconds to about 30 seconds.
Inventors
- 👤 William D. Brown
- 👤 Muhammad A. Khaliq
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 13:18
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
94 words
A device comprising: (a) a thin film layer of silicon nitride having a thickness of less than about 1000Å on a substrate deposited by means of plasma enhanced chemical vapor deposition techniques; and (b) the silicon nitride layer having been rapidly thermal annealed within a temperature range and a time period range sufficient to increase the N--H bond concentration of the silicon nitride to produce a thin film layer of silicon nitride that is less than about 1000Å thick and stable with respect to change transfer hysteresis between the silicon nitride and the substrate.
Claim 2
Independent Claim
94 words
A device comprising: (a) a thin film layer of silicon nitride having a thickness of less than about 1000Å on a substrate deposited by means of plasma enhanced chemical vapor deposition techniques; and (b) the silicon nitride layer having been rapidly thermal annealed within a temperature range and a time period range sufficient to increase the N--H bond concentration of the silicon nitride to produce a thin film layer of silicon nitride that is less than about 1000Å thick and stable with respect to change transfer hysteresis between the silicon nitride and the substrate.
Claim 3
Dependent Claim
10 words
The device of claim 1, wherein the substrate is silicon.
Claim 4
Dependent Claim
18 words
The device of claim 1, wherein the temperature range is from about 600° C. to about 700° C.
Claim 5
Dependent Claim
19 words
The device of claim 1, wherein the time period range is from about 3 seconds to about 30 seconds.
Claim 6
Dependent Claim
14 words
The device of claim 1, wherein the annealing takes place in a nitrogen atmosphere.
References Cited (Backward Citations)
US3652324A
Cited
US3805130A
Cited
US3856587A
Cited
US4611308A
Cited
JPS5522863A
Cited
US4229232A
Cited
JPS55110037A
Cited
GB2056174A
Cited
US4331709A
Cited
US4277320A
Cited
US4406053A
Cited
JPS57153429A
Cited
JPS57169248A
Cited
JPS5831536A
Cited
JPS59163871A
Cited
JPS6012737A
Cited
US4566913A
Cited
US4585492A
Cited
US4636400A
Cited
JPS62172732A
Cited
US4692344A
Cited
US4784975A
Cited
EP0269008A2
Cited
US4776925A
Cited
US4863755A
Cited
US4784964A
Cited
JPH01140653A
Cited
US4898839A
Cited
US4962065A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-22 | 1997-05-24 | 1997-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-22 | 2001-05-24 | 2001-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-22 | 2005-05-24 | 2005-11-23 | $7700.00 | Window Closed / Lapsed |