EP0269008A2
Expired / Lapsed
EP
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Semiconductor device with improved passivation film and process of fabrication thereof
Assignee: Yamaha Corp
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Filing: 1987-11-19
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Granted: —
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Expires: 2007-11-19
Abstract
Abstract For enhancement of device stability, there is disclosed a semiconductor device fabricated on a semiconductor substrate (1) comprising a) source and drain regions (3 and 4) formed in a surface portion of the semiconductor substrate and spaced from each other by a channel region, b) a gate insulating film (5) formed on the channel region, c) a gate electrode structure (6 and 7) formed on the gate insulating film, and d) a passivation film (12) of an insulating material covering the gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5 × 10²¹ per cm³, and the unstable hydrogen-bonded-silicons are decreased in number so that the semiconductor device only have a decreased trap density which results in stable operation.
Inventors
- 👤 Katsuyuki C/O Yamaha Corporation Yokoi
- 👤 Shigeru C/O Yamaha Corporation Suga
- 👤 Toshio C/O Yamaha Corporation Fujioka
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 15:49
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10W74/43; H10W74/10; H10W74/131; H10W74/137; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/114; Y10S438/00; Y10S438/958
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
80 words
A semiconductor device fabricated on a semiconductor substrate and comprising source and drain regions formed in a surface portion of said semiconductor substrate and spaced from each other by a channel region, a gate insulating film formed on said channel region, a gate electrode structure formed on said gate insulating film, characterized by a passivation film of an insulating material covering said gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5 × 10²¹ per cm³.
Claim 2
Dependent Claim
80 words
A semiconductor device fabricated on a semiconductor substrate and comprising source and drain regions formed in a surface portion of said semiconductor substrate and spaced from each other by a channel region, a gate insulating film formed on said channel region, a gate electrode structure formed on said gate insulating film, characterized by a passivation film of an insulating material covering said gate electrode structure and containing hydrogen-bonded-silicons equal in number to or less than 5 × 10²¹ per cm³.
Claim 3
Dependent Claim
19 words
A semiconductor device as set forth in claim 1, in which said passivation film is formed of silicon nitride.
Claim 4
Dependent Claim
21 words
A semiconductor device as set forth in claim 1, in which said hydrogen-bonded-silicons are represented by a chemical symbol of Si-H.
Claim 5
Dependent Claim
28 words
A semiconductor device as set forth in claim 1, in which said gate electrode structure has an gate electrode and a cap insulating film covering the gate electrode.
Claim 6
Dependent Claim
18 words
A semiconductor device as set forth in claim 4, in which said semiconductor substrate is formed of silicon.
Claim 7
Dependent Claim
20 words
A semiconductor device as set forth in claim 5, in which said gate insulating film is formed of silicon dioxide.
Claim 8
Dependent Claim
20 words
A semiconductor device as set forth in claim 6, in which said gate electrode is formed of a doped polysilicon.
Claim 9
Dependent Claim
22 words
A semiconductor device as set forth in claim 4, in which said cap insulating film is formed of a phosphorus-doped silicon dioxide.
Claim 10
Dependent Claim
80 words
A process of fabricating a semiconductor device, comprising the steps of: a) preparing a multi-layer structure having source and drain regions formed in respective portions of a semiconductor substrate, a gate insulating film formed over that area between the source and drain regions and a gate electrode structure formed on the gate insulating film; and b) forming a passivation film covering said multi-layer structure by a plasma-assisted chemical vapor deposition technique using a plasma associated with an electron cyclotron resonance.
Claim 11
Dependent Claim
80 words
A process of fabricating a semiconductor device, comprising the steps of: a) preparing a multi-layer structure having source and drain regions formed in respective portions of a semiconductor substrate, a gate insulating film formed over that area between the source and drain regions and a gate electrode structure formed on the gate insulating film; and b) forming a passivation film covering said multi-layer structure by a plasma-assisted chemical vapor deposition technique using a plasma associated with an electron cyclotron resonance.
Claim 12
Dependent Claim
27 words
A process as set forth in claim 8, in which said plasma-assisted chemical vapor deposition is carried out by using a gaseous mixture having silane and nitrogen.
Claim 13
Dependent Claim
30 words
A process as set forth in claim 9, in which said plasma-assisted chemical vapor deposition is carried out at a pressure equal to or less than 8 × 10⁻³ Torr.
References Cited (Backward Citations)
No citation records indexed.
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