US4692344A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming a dielectric film and semiconductor device including said film
Assignee: RCA Corp
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Filing: 1986-02-28
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Granted: 1987-09-08
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Expires: 2006-02-28
Abstract
Abstract A method for forming a dielectric film over a semiconductor device is disclosed. The body of semiconductor material is formed and a hydrogen-containing silicon nitride material substantially free of silicon-hydrogen bonds is formed thereover. Also disclosed is a semiconductor device, including a body of semiconductor material and a dielectric film thereover. The dielectric film is a hydrogen-containing silicon nitride material substantially free of silicon-to-hydrogen bonds.
Inventors
- 👤 Grzegorz Kaganowicz
- 👤 Alfred C. Ipri
- 👤 Richard S. Crandall
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:49
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6319; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
67 words
A method of forming a dielectric film on a semiconductor body comprising subjecting a first major surface of said semiconductor body to a glow discharge in the presence of silane and a nitrogen-containing material; and depositing a hydrogen-containing, silicon nitride film substantially free of silicon-to-hydrogen bonds, over said first major surface, said silicon nitride film having a silicon to nitrogen ratio of between about 0.65:1 and 0.80:1.
Claim 2
Independent Claim
67 words
A method of forming a dielectric film on a semiconductor body comprising subjecting a first major surface of said semiconductor body to a glow discharge in the presence of silane and a nitrogen-containing material; and depositing a hydrogen-containing, silicon nitride film substantially free of silicon-to-hydrogen bonds, over said first major surface, said silicon nitride film having a silicon to nitrogen ratio of between about 0.65:1 and 0.80:1.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the deposition temperature is between about 25° and 300° C.
Claim 4
Dependent Claim
16 words
The method of claim 2 wherein the deposition temperature is between about 25° and 100° C.
Claim 5
Dependent Claim
18 words
The method of claim 1 wherein at least the first major surface of said semiconductor body comprises silicon.
Claim 6
Dependent Claim
20 words
The method of claim 4 wherein the first major surface is oxidized prior to depositing the hydrogen-containing silicon nitride thereover.
Claim 7
Dependent Claim
19 words
The method of claim 1 wherein said silicon nitride comprises between about 10 and 20 atomic percent of hydrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-09-07 | 1991-03-09 | 1991-09-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-09-07 | 1995-03-09 | 1995-09-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-09-07 | 1999-03-09 | 1999-09-08 | $7700.00 | Window Closed / Lapsed |