US5246529A
Expired / Lapsed
US
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Plasma processing method
Assignee: Tokyo Electron Ltd
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Filing: 1991-09-05
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Granted: 1993-09-21
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Expires: 2011-09-05
Abstract
Abstract A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.
Inventors
- 👤 Yoshio Fukasawa
- 👤 Kenji Momose
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:46
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H10; H10P; H10P95/00; H01J37/32321
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
150 words
A method of etching a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas containing hydrogen bromide gas into said plasma generation area at a pressure of 1 Torr or less; radiating light for not more than 10 seconds having a spectral light having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of a plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes after the radiation of the light is initiated, thereby generating the plasma from the plasma generation gas; and etching the workpiece with the plasma.
Claim 2
Independent Claim
150 words
A method of etching a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas containing hydrogen bromide gas into said plasma generation area at a pressure of 1 Torr or less; radiating light for not more than 10 seconds having a spectral light having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of a plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes after the radiation of the light is initiated, thereby generating the plasma from the plasma generation gas; and etching the workpiece with the plasma.
Claim 3
Dependent Claim
16 words
The method according to claim 1, wherein said light is radiated from a low-pressure mercury lamp.
Claim 4
Dependent Claim
36 words
The method according to claim 1, wherein said high-frequency power is applied across said first and second electrodes after the radiation of said light, and said light is shut off after said generated plasma is stabilized.
Claim 5
Independent Claim
149 words
A method of processing a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas containing hydrogen bromide gas into said plasma generation area at a pressure of 1 Torr or less; radiating light for not more than 10 seconds having a spectral line having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of a plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes, after radiation of said light is initiated, thereby generating a plasma from the plasma generation gas; and processing the workpiece with said plasma.
Claim 6
Independent Claim
149 words
A method of processing a workpiece with a plasma, comprising the steps of: providing a chamber in which first and second electrodes are arranged parallel to each other at a distance, said first and second electrodes defining a plasma generation area therebetween; evacuating said chamber; introducing a desired plasma generation gas containing hydrogen bromide gas into said plasma generation area at a pressure of 1 Torr or less; radiating light for not more than 10 seconds having a spectral line having a wavelength of not more than 436 nm onto the gas in the plasma generation area for a predetermined period of time so as to precipitate generation of a plasma from the plasma generation gas; applying a high-frequency power across said first and second electrodes, after radiation of said light is initiated, thereby generating a plasma from the plasma generation gas; and processing the workpiece with said plasma.
Claim 7
Dependent Claim
16 words
The method according to claim 4, wherein said light is radiated from a low-pressure mercury lamp.
Claim 8
Dependent Claim
14 words
The method according to claim 4, wherein said processing is etching of the workpiece.
Claim 9
Dependent Claim
34 words
The method according to claim 6, wherein said plasma generation gas further contains at least one gas selected from the group consisting of hydrogen chloride gas, oxygen gas, chlorine gas, and sulfur hexafluoride gas.
Claim 10
Dependent Claim
15 words
The method according to claim 6, wherein said plasma generation gas is diluted with helium.
Claim 11
Dependent Claim
24 words
The method according to claim 6, wherein said workpiece comprises a semiconductor wafer having a polysilicon or silicon nitride film on a surface thereof.
Claim 12
Dependent Claim
27 words
The method according to claim 6, wherein said workpiece comprises a semiconductor wafer having a tungsten silicide/polysilicon or a molybdenum silicide/polysilicon laminate film on a surface thereof.
Claim 13
Dependent Claim
19 words
The method according to claim 4, wherein said high-frequency power falls within a range of 50 to 500 W.
Claim 14
Independent Claim
172 words
A method of processing a workpiece with a plasma, comprising the steps of: providing a chamber in which upper and lower electrodes are arranged parallel to each other with a gap therebetween, said upper and lower electrodes defining a plasma generation area therebetween, with a workpiece being disposed in said plasma generation area; and evacuating said chamber; introducing a desired plasma generation gas into said plasma generation area at a pressure of 1 Torr or less; applying a high-frequency power across said upper and lower electrodes, to thereby generate the plasma from said plasma generation gas; radiating light having a spectral line having a wavelength of not more than 436 nm parallel to said upper electrode and workpiece to said plasma generation gas in said plasma generation area, so that said plasma generation gas is irradiated with said light at least at the time of the application of said high-frequency power so as to precipitate the generation of said plasma from said plasma generation gas; and processing the workpiece with said plasma.
Claim 15
Independent Claim
172 words
A method of processing a workpiece with a plasma, comprising the steps of: providing a chamber in which upper and lower electrodes are arranged parallel to each other with a gap therebetween, said upper and lower electrodes defining a plasma generation area therebetween, with a workpiece being disposed in said plasma generation area; and evacuating said chamber; introducing a desired plasma generation gas into said plasma generation area at a pressure of 1 Torr or less; applying a high-frequency power across said upper and lower electrodes, to thereby generate the plasma from said plasma generation gas; radiating light having a spectral line having a wavelength of not more than 436 nm parallel to said upper electrode and workpiece to said plasma generation gas in said plasma generation area, so that said plasma generation gas is irradiated with said light at least at the time of the application of said high-frequency power so as to precipitate the generation of said plasma from said plasma generation gas; and processing the workpiece with said plasma.
Claim 16
Dependent Claim
11 words
The method according to claim 12, wherein said processing comprises etching.
Claim 17
Dependent Claim
27 words
The method according to claim 13, wherein said workpiece comprises a semiconductor wafer having a tungsten silicide/polysilicon or a molybdenum silicide/polysilicon laminate film on a surface thereof.
Claim 18
Dependent Claim
24 words
The method according to claim 13, wherein said workpiece comprises a semiconductor wafer having a polysilicon or silicon nitride film on a surface thereof.
Claim 19
Dependent Claim
20 words
The method according to claim 12, wherein said gap between said upper and lower electrodes is 1 cm or less.
Claim 20
Dependent Claim
19 words
The method according to claim 12, wherein said high-frequency power falls within a range of 50 to 500 W.
Claim 21
Dependent Claim
15 words
The method according to claim 12, wherein said plasma generation gas comprises hydrogen bromide gas.
Claim 22
Dependent Claim
34 words
The method according to claim 18, wherein said plasma generation gas further contains at least one gas selected from the group consisting of hydrogen chloride gas, oxygen gas, chlorine gas and sulfur hexafluoride gas.
Claim 23
Dependent Claim
20 words
The method according to claim 12, wherein said radiation of said light is ceased after the generated plasma is stabilized.
Claim 24
Dependent Claim
24 words
The method according to claim 12, wherein said light is radiated for not more than 10 seconds from the application of said high-frequency power.
Claim 25
Dependent Claim
25 words
The method according to claim 12, further comprising applying magnetic field to said plasma generation area during the plasma generation from said plasma generation gas.
References Cited (Backward Citations)
US4529475A
Cited
JPS6114722A
Cited
EP0216603A2
Cited
EP0220481A2
Cited
JPS62115723A
Cited
US4778563A
Cited
US4828649A
Cited
US4857382A
Cited
US4908095A
Cited
US4937094A
Cited
US4997520A
Cited
US5007982A
Cited
US5013398A
Cited
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